APT10078BLL
APT10078SLL
1000V 14A 0.780Ω
POWER MOS 7
R
MOSFET
D3PAK
TO-247
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
MAXIMUM RATINGS
Symbol
VDSS
ID
D
• Increased Power Dissipation
• Easier To Drive
• TO-247 or Surface Mount D3PAK Package
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT10078BLL_SLL
UNIT
1000
Volts
Drain-Source Voltage
14
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
403
Watts
Linear Derating Factor
3.23
W/°C
PD
TJ,TSTG
56
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
EAS
1
-55 to 150
Amps
14
1
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
Volts
30
4
mJ
1300
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
1000
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 7A)
TYP
MAX
Volts
0.780
Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V)
100
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C)
500
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
3
Downloaded from Elcodis.com electronic components distributor
Ohms
µA
±100
nA
5
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
4-2004
Characteristic / Test Conditions
050-7003 Rev C
Symbol
APT10078BLL_SLL
DYNAMIC CHARACTERISTICS
Symbol
Test Conditions
Characteristic
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 25V
C rss
Reverse Transfer Capacitance
f = 1 MHz
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
3
VDD = 500V
RESISTIVE SWITCHING
VGS = 15V
VDD = 500V
tf
ID = 14A @ 25°C
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
ns
355
VDD = 667V, VGS = 15V
75
ID = 14A, RG = 3Ω
INDUCTIVE SWITCHING @ 125°C
6
nC
9
RG = 1.6Ω
INDUCTIVE SWITCHING @ 25°C
6
UNIT
pF
75
95
12
60
9
8
30
ID = 14A @ 25°C
Turn-off Delay Time
MAX
2525
430
VGS = 10V
Rise Time
td(off)
TYP
VGS = 0V
Qg
tr
MIN
µJ
740
VDD = 667V, VGS = 15V
ID = 14A, RG = 3Ω
95
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
MIN
Characteristic / Test Conditions
TYP
MAX
14
UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
t rr
Reverse Recovery Time (IS = -ID14A, dl S/dt = 100A/µs)
692
ns
Q rr
Reverse Recovery Charge (IS = -ID14A, dl S /dt = 100A/µs)
7.87
µC
dv/
Peak Diode Recovery
dt
56
(Body Diode)
1.3
(VGS = 0V, IS = -ID14A)
dv/
5
dt
Amps
Volts
10
V/ns
MAX
UNIT
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
0.31
RθJC
Junction to Case
RθJA
Junction to Ambient
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 13.27mH, RG = 25Ω, Peak IL = 14A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ ID-14A di/dt ≤ 700A/µs VR ≤ 1000 TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.9
0.25
0.7
0.20
0.5
Note:
0.15
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7003 Rev C
4-2004
0.35
0.30
0.3
0.10
t1
t2
0.05
0
0.1
0.05
10-5
SINGLE PULSE
10-4
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Downloaded from Elcodis.com electronic components distributor
°C/W
1.0
Typical Performance Curves
APT10078BLL_SLL
30
VGS =15 & 8V
Power
(watts)
0.0258
0.00295F
0.107
0.0114F
0.177
0.174F
ID, DRAIN CURRENT (AMPERES)
RC MODEL
Junction
temp. (°C)
25
7V
6.5V
20
6V
15
10
5.5V
5
5V
Case temperature. (°C)
0
40
30
20
TJ = +125°C
10
0
TJ = +25°C
TJ = -55°C
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
12
10
8
6
4
2
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
NORMALIZED TO
= 10V @ 0.5 I = 7A
D
1.30
1.20
VGS=10V
1.10
VGS=20V
1.00
0.90
0.80
0
5
10
15
20
25
30
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
I
D
= 0.5 I
D
V
GS
1.10
1.05
1.00
0.95
0.90
0.85
-50
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
= 7A
= 10V
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
Downloaded from Elcodis.com electronic components distributor
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
GS
1.15
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
14
V
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
4-2004
50
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@
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