APT10078BLLG

APT10078BLL APT10078SLL 1000V 14A 0.780Ω POWER MOS 7 R MOSFET D3PAK TO-247 ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg MAXIMUM RATINGS Symbol VDSS ID D • Increased Power Dissipation • Easier To Drive • TO-247 or Surface Mount D3PAK Package G S All Ratings: TC = 25°C unless otherwise specified. Parameter APT10078BLL_SLL UNIT 1000 Volts Drain-Source Voltage 14 Continuous Drain Current @ TC = 25°C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 403 Watts Linear Derating Factor 3.23 W/°C PD TJ,TSTG 56 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR EAS 1 -55 to 150 Amps 14 1 Single Pulse Avalanche Energy °C 300 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy Volts 30 4 mJ 1300 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 1000 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, ID = 7A) TYP MAX Volts 0.780 Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) 100 Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C) 500 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) 3 Downloaded from Elcodis.com electronic components distributor Ohms µA ±100 nA 5 Volts CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT 4-2004 Characteristic / Test Conditions 050-7003 Rev C Symbol APT10078BLL_SLL DYNAMIC CHARACTERISTICS Symbol Test Conditions Characteristic Ciss Input Capacitance Coss Output Capacitance VDS = 25V C rss Reverse Transfer Capacitance f = 1 MHz Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time 3 VDD = 500V RESISTIVE SWITCHING VGS = 15V VDD = 500V tf ID = 14A @ 25°C Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy ns 355 VDD = 667V, VGS = 15V 75 ID = 14A, RG = 3Ω INDUCTIVE SWITCHING @ 125°C 6 nC 9 RG = 1.6Ω INDUCTIVE SWITCHING @ 25°C 6 UNIT pF 75 95 12 60 9 8 30 ID = 14A @ 25°C Turn-off Delay Time MAX 2525 430 VGS = 10V Rise Time td(off) TYP VGS = 0V Qg tr MIN µJ 740 VDD = 667V, VGS = 15V ID = 14A, RG = 3Ω 95 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol MIN Characteristic / Test Conditions TYP MAX 14 UNIT IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 t rr Reverse Recovery Time (IS = -ID14A, dl S/dt = 100A/µs) 692 ns Q rr Reverse Recovery Charge (IS = -ID14A, dl S /dt = 100A/µs) 7.87 µC dv/ Peak Diode Recovery dt 56 (Body Diode) 1.3 (VGS = 0V, IS = -ID14A) dv/ 5 dt Amps Volts 10 V/ns MAX UNIT THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP 0.31 RθJC Junction to Case RθJA Junction to Ambient 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25°C, L = 13.27mH, RG = 25Ω, Peak IL = 14A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ ID-14A di/dt ≤ 700A/µs VR ≤ 1000 TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.9 0.25 0.7 0.20 0.5 Note: 0.15 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7003 Rev C 4-2004 0.35 0.30 0.3 0.10 t1 t2 0.05 0 0.1 0.05 10-5 SINGLE PULSE 10-4 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Downloaded from Elcodis.com electronic components distributor °C/W 1.0 Typical Performance Curves APT10078BLL_SLL 30 VGS =15 & 8V Power (watts) 0.0258 0.00295F 0.107 0.0114F 0.177 0.174F ID, DRAIN CURRENT (AMPERES) RC MODEL Junction temp. (°C) 25 7V 6.5V 20 6V 15 10 5.5V 5 5V Case temperature. (°C) 0 40 30 20 TJ = +125°C 10 0 TJ = +25°C TJ = -55°C 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS 12 10 8 6 4 2 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 2.5 NORMALIZED TO = 10V @ 0.5 I = 7A D 1.30 1.20 VGS=10V 1.10 VGS=20V 1.00 0.90 0.80 0 5 10 15 20 25 30 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT I D = 0.5 I D V GS 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 = 7A = 10V 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE Downloaded from Elcodis.com electronic components distributor VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) GS 1.15 BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 14 V 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 4-2004 50 VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @