APT6021BLL
APT6021SLL
600V 29A 0.210Ω
POWER MOS 7
R
MOSFET
BLL
D3PAK
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
VDSS
ID
SLL
D
• Increased Power Dissipation
• Easier To Drive
• TO-247 or Surface Mount D3PAK Package
MAXIMUM RATINGS
Symbol
TO-247
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT6021BLL_SLL
UNIT
600
Volts
Drain-Source Voltage
29
Continuous Drain Current @ TC = 25°C
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
400
Watts
Linear Derating Factor
3.20
W/°C
PD
TJ,TSTG
1
116
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
EAS
1
-55 to 150
Amps
29
1
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
Volts
30
4
mJ
1300
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
600
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 14.5A)
TYP
MAX
Volts
0.210
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
100
Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C)
500
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
Downloaded from Elcodis.com electronic components distributor
Ohms
µA
±100
nA
5
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
9-2004
Characteristic / Test Conditions
050-7067 Rev C
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT6021BLL_SLL
Test Conditions
Characteristic
MIN
TYP
C iss
Input Capacitance
Coss
Output Capacitance
VDS = 25V
635
Reverse Transfer Capacitance
f = 1 MHz
48
VGS = 10V
80
VDD = 300V
20
C rss
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
td(on)
ID = 29A @ 25°C
td(off)
tf
7
VDD = 300V
RG = 1.6Ω
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
6
6
ns
25
ID = 29A @ 25°C
Turn-off Delay Time
nC
10
VGS = 15V
Rise Time
pF
44
RESISTIVE SWITCHING
Turn-on Delay Time
tr
UNIT
3470
VGS = 0V
3
MAX
4
INDUCTIVE SWITCHING @ 25°C
325
VDD = 400V, VGS = 15V
ID = 29A, RG = 5Ω
205
INDUCTIVE SWITCHING @ 125°C
500
VDD = 400V VGS = 15V
µJ
250
ID = 29A, RG = 5Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
MIN
Characteristic / Test Conditions
TYP
MAX
29
UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
t rr
Reverse Recovery Time (IS = -29A, dl S/dt = 100A/µs)
664
ns
Q rr
Reverse Recovery Charge (IS = -29A, dl S /dt = 100A/µs)
9.29
µC
dv/
Peak Diode Recovery
dt
dv/
116
(Body Diode)
1.3
(VGS = 0V, IS = -29A)
dt
5
Amps
Volts
8
V/ns
MAX
UNIT
THERMAL CHARACTERISTICS
Symbol
Characteristic
RθJC
Junction to Case
RθJA
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
MIN
TYP
0.31
40
4 Starting Tj = +25°C, L = 3.09mH, RG = 25Ω, Peak IL = 29A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID29A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.9
0.25
0.7
0.20
0.5
0.15
0.3
0.10
0.05
0
Note:
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7067 Rev C
9-2004
0.35
0.30
0.1
t1
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.05
10-5
SINGLE PULSE
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Downloaded from Elcodis.com electronic components distributor
°C/W
1.0
Typical Performance Curves
Junction
temp. (°C)
0.00789F
Power
(watts)
0.180
0.161F
Case temperature. (°C)
ID, DRAIN CURRENT (AMPERES)
RC MODEL
0.131
APT6021BLL_SLL
80
VGS =15 &10V
60
8V
7.5V
40
7V
6.5V
20
6V
5.5V
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
100
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@
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