APT6021BLLG

APT6021BLL APT6021SLL 600V 29A 0.210Ω POWER MOS 7 R MOSFET BLL D3PAK ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg VDSS ID SLL D • Increased Power Dissipation • Easier To Drive • TO-247 or Surface Mount D3PAK Package MAXIMUM RATINGS Symbol TO-247 G S All Ratings: TC = 25°C unless otherwise specified. Parameter APT6021BLL_SLL UNIT 600 Volts Drain-Source Voltage 29 Continuous Drain Current @ TC = 25°C Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 400 Watts Linear Derating Factor 3.20 W/°C PD TJ,TSTG 1 116 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR EAS 1 -55 to 150 Amps 29 1 Single Pulse Avalanche Energy °C 300 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy Volts 30 4 mJ 1300 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 600 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, ID = 14.5A) TYP MAX Volts 0.210 Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) 100 Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C) 500 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) Downloaded from Elcodis.com electronic components distributor Ohms µA ±100 nA 5 Volts 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT 9-2004 Characteristic / Test Conditions 050-7067 Rev C Symbol DYNAMIC CHARACTERISTICS Symbol APT6021BLL_SLL Test Conditions Characteristic MIN TYP C iss Input Capacitance Coss Output Capacitance VDS = 25V 635 Reverse Transfer Capacitance f = 1 MHz 48 VGS = 10V 80 VDD = 300V 20 C rss Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) ID = 29A @ 25°C td(off) tf 7 VDD = 300V RG = 1.6Ω Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy 6 6 ns 25 ID = 29A @ 25°C Turn-off Delay Time nC 10 VGS = 15V Rise Time pF 44 RESISTIVE SWITCHING Turn-on Delay Time tr UNIT 3470 VGS = 0V 3 MAX 4 INDUCTIVE SWITCHING @ 25°C 325 VDD = 400V, VGS = 15V ID = 29A, RG = 5Ω 205 INDUCTIVE SWITCHING @ 125°C 500 VDD = 400V VGS = 15V µJ 250 ID = 29A, RG = 5Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol MIN Characteristic / Test Conditions TYP MAX 29 UNIT IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 t rr Reverse Recovery Time (IS = -29A, dl S/dt = 100A/µs) 664 ns Q rr Reverse Recovery Charge (IS = -29A, dl S /dt = 100A/µs) 9.29 µC dv/ Peak Diode Recovery dt dv/ 116 (Body Diode) 1.3 (VGS = 0V, IS = -29A) dt 5 Amps Volts 8 V/ns MAX UNIT THERMAL CHARACTERISTICS Symbol Characteristic RθJC Junction to Case RθJA Junction to Ambient 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 MIN TYP 0.31 40 4 Starting Tj = +25°C, L = 3.09mH, RG = 25Ω, Peak IL = 29A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID29A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.9 0.25 0.7 0.20 0.5 0.15 0.3 0.10 0.05 0 Note: PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7067 Rev C 9-2004 0.35 0.30 0.1 t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.05 10-5 SINGLE PULSE 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Downloaded from Elcodis.com electronic components distributor °C/W 1.0 Typical Performance Curves Junction temp. (°C) 0.00789F Power (watts) 0.180 0.161F Case temperature. (°C) ID, DRAIN CURRENT (AMPERES) RC MODEL 0.131 APT6021BLL_SLL 80 VGS =15 &10V 60 8V 7.5V 40 7V 6.5V 20 6V 5.5V FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL 100 VDS> ID (ON) x RDS (ON)MAX. 250 µSEC. PULSE TEST @