APT10090BLLG

APT10090BLL APT10090SLL 1000V 12A 0.950Ω POWER MOS 7 MOSFET BLL TO -2 47 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. ® • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg VDSS ID SLL D • Increased Power Dissipation • Easier To Drive • TO-247 or Surface Mount D3PAK Package MAXIMUM RATINGS Symbol D3PAK G S All Ratings: TC = 25°C unless otherwise specified. Parameter Drain-Source Voltage APT10090 UNIT 1000 Volts 12 Continuous Drain Current @ TC = 25°C 1 Amps 48 IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 298 Watts Linear Derating Factor 2.4 W/°C VGSM PD TJ,TSTG -55 to 150 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current 1 12 1 Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy °C 300 (Repetitive and Non-Repetitive) EAR Volts Amps 30 4 mJ 1210 STATIC ELECTRICAL CHARACTERISTICS ID(on) RDS(on) IDSS IGSS VGS(th) MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA) 1000 Volts 12 Amps On State Drain Current 2 (VDS > I D(on) x RDS(on) Max, VGS = 10V) 2 TYP MAX UNIT 0.95 Ohms Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V) 100 μA Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C) 500 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) ±100 nA 5 Volts Drain-Source On-State Resistance (VGS = 10V, 6A) Gate Threshold Voltage (VDS = VGS, ID = 1mA) 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com 7-2010 BVDSS Characteristic / Test Conditions 050-7002 Rev D Symbol DYNAMIC CHARACTERISTICS Symbol APT10090BLL - SLL Characteristic Test Conditions Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time 12 ID = 12A @ 25°C 9 VGS = 15V 5 VDD = 500V RG = .6Ω Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy 4 INDUCTIVE SWITCHING @ 25°C 6 334 VDD = 670V, VGS = 15V 6 ns 23 ID = 12A @ 25°C Fall Time≤ nC 47 RESISTIVE SWITCHING Turn-off Delay Time pF 71 VDD = 500V Rise Time UNIT 55 VGS = 10V Qgd tf 332 f = 1 MHz 3 MAX 1969 VDS = 25V Gate-Source Charge td(off) TYP VGS = 0V Qgs tr MIN ID = 12A, RG = 5Ω 77 INDUCTIVE SWITCHING @ 125°C 672 VDD = 670V VGS = 15V ID = 12A, RG = 5Ω μJ 100 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS Characteristic / Test Conditions MIN TYP MAX 12 Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 (Body Diode) 48 VSD Diode Forward Voltage 2 (VGS = 0V, IS = -ID12A) 1.3 t rr Reverse Recovery Time (IS = -ID12A, dl S/dt = 100A/μs) 700 Q rr Reverse Recovery Charge (IS = -ID12A, dl S/dt = 100A/μs) 9.0 dv Peak Diode Recovery dv/dt /dt UNIT Amps Volts ns μC 5 10 V/ns THERMAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case RθJA Junction to Ambient TYP MAX 0.42 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.9 0.35 0.7 0.25 0.5 0.20 Note: 0.15 PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7002 Rev D 7-2010 0.45 0.30 0.3 0.10 0 t1 t2 t 0.1 0.05 0.05 10-5 SINGLE PULSE 10-4 °C/W 4 Starting Tj = +25°C, L = 16.81mH, RG = 25Ω, Peak IL = 12A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID12A di/dt ≤ 700A/μs VR ≤VDSS TJ ≤150°C 6 Eon includes diode reverse recovery measured in accordance wtih JEDEC standard JESD24-1. See figures 18, 20. Microsemi Reserves the right to change, without notice, the specifications and information contained herein. 0.40 UNIT Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Typical Performance Curves APT10090BLL - SLL ID, DRAIN CURRENT (AMPERES) 30 25 VGS =15,10V& 7.5V 20 7V 6.5 15 6V 10 5.5V 5 5V 0 30 25 20 TJ = +125°C 15 TJ = +25°C 10 VDS> ID (ON) x RDS(ON) MAX. 250μSEC. PULSE TEST @