APT8043BLLG

APT8043BLL APT8043SLL 800V POWER MOS 7 R MOSFET BLL D3PAK ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON) ® and Qg. Power MOS 7 combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg VDSS ID TO-247 SLL D • Increased Power Dissipation • Easier To Drive • TO-247 or Surface Mount D3PAK Package MAXIMUM RATINGS Symbol 20A 0.430Ω G S All Ratings: TC = 25°C unless otherwise specified. Parameter APT8043BLL_SLL UNIT 800 Volts Drain-Source Voltage 20 Continuous Drain Current @ TC = 25°C Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous ±30 VGSM Gate-Source Voltage Transient ±40 Total Power Dissipation @ TC = 25°C 403 Watts Linear Derating Factor 3.23 W/°C PD TJ,TSTG 1 80 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS Single Pulse Avalanche Energy 1 Volts -55 to 150 °C 300 Amps 20 (Repetitive and Non-Repetitive) 1 30 4 mJ 1300 STATIC ELECTRICAL CHARACTERISTICS MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) 800 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 (VGS = 10V, ID = 5A) TYP MAX Volts 0.43 Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V) 100 Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125°C) 500 Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1mA) Downloaded from Elcodis.com electronic components distributor Ohms µA ±100 nA 5 Volts 3 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com UNIT 7-2004 Characteristic / Test Conditions 050-7056 Rev C Symbol DYNAMIC CHARACTERISTICS Symbol APT8043BLL_SLL Test Conditions Characteristic MIN TYP Ciss Input Capacitance Coss Output Capacitance VDS = 25V 485 Reverse Transfer Capacitance f = 1 MHz 80 VGS = 10V 85 VDD = 400V 13 Crss Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller") Charge td(on) Turn-on Delay Time tr ID = 20A @ 25°C tf 5 VDD = 400V RG = 1.6Ω Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy 5 INDUCTIVE SWITCHING @ 25°C 6 280 VDD = 533V, VGS = 15V 6 ns 25 ID = 20A @ 25°C Fall Time nC 9 VGS = 15V Turn-off Delay Time pF 55 RESISTIVE SWITCHING Rise Time td(off) UNIT 2500 VGS = 0V 3 MAX ID = 20A, RG = 5Ω 125 INDUCTIVE SWITCHING @ 125°C 460 VDD = 533V, VGS = 15V ID = 20A, RG = 5Ω µJ 160 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol MIN Characteristic / Test Conditions TYP MAX 20 UNIT IS Continuous Source Current (Body Diode) ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 t rr Reverse Recovery Time (IS = -20A, dl S/dt = 100A/µs) 680 ns Q Reverse Recovery Charge (IS = -20A, dl S/dt = 100A/µs) 10.6 µC rr dv/ dt Peak Diode Recovery dv/ 80 (Body Diode) 1.3 (VGS = 0V, IS = -20A) dt Amps Volts 10 V/ns MAX UNIT 5 THERMAL CHARACTERISTICS Symbol Characteristic MIN RθJC Junction to Case RθJA Junction to Ambient TYP 0.31 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 4 Starting Tj = +25°C, L = 6.50mH, RG = 25Ω, Peak IL = 20A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID20A di/dt ≤ 700A/µs VR ≤ 800 TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.9 0.25 0.7 0.20 0.5 0.15 Note: PDM Z JC, THERMAL IMPEDANCE (°C/W) θ 050-7056 Rev C 7-2004 0.35 0.30 0.3 0.10 0.05 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 0.05 0 10-5 t1 t2 SINGLE PULSE 0.1 10-4 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Downloaded from Elcodis.com electronic components distributor 10-3 °C/W 10-2 1.0 Typical Performance Curves RC MODEL 0.0258 Power (watts) 0.107 0.177 0.00295F 0.0114F 0.174F ID, DRAIN CURRENT (AMPERES) Junction temp. (°C) APT8043BLL_SLL 50 VGS =15 &10 V 40 7.5V 30 7V 20 6.5V 10 6V Case temperature. (°C) 5.5V VDS> ID (ON) x RDS (ON)MAX. 250µSEC. PULSE TEST @