APT60GT60BRG

APT60GT60BRG APT60GT60SRG 600V Thunderbolt IGBT ® (B) TO The Thunderbolt IGBT® is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT® offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop • High Freq. Switching to 150KHz • Low Tail Current • Ultra Low Leakage Current • Avalanche Rated • RBSOA and SCSOA Rated -2 D 3 PA K 47 (S) C G G C E E • RoHS Compliant MAXMUM RATINGS Symbol Parameter APT60GT60BR_SRG Unit VCES Collector-Emitter Voltage 600 VGE Gate Emitter Voltage ±20 IC1 Continuous Collector Current @ TC = 25°C 4± 100 IC2 Continuous Collector Current @ TC = 105°C 60 ICM Pulsed Collector Current ILM RBSOA Clamped Inductive Load Current RG = 11Ω, TC = 25°C 360 EAS Single Pulse Avalanche Energy 2 65 mJ PD Total Power Dissipation 500 Watts TJ, TSTG 1 Amps 360 @ TC = 25°C -55 to 150 Operating and Storage Junction Temperature Range °C 300 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. TL Volts STATIC ELECTRICAL CHARACTERISTICS Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 0.5mA) VGE(TH) Gate Threshold Voltage VCE(ON) Collector-Emitter On Voltage (VGE = 15V, I C = IC2, Tj = 25°C) ICES IGES (VCE = VGE, I C = 500μA, Tj = 25°C) TYP MAX 3 4 5 1.6 2.2 2.5 600 Collector-Emitter On Voltage (VGE = 15V, I C = IC2, Tj = 125°C) 2.8 Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25°C) 80 Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125°C) 2000 Gate-Emitter Leakage Current (VGE = ±20V, VCE = 0V) ±100 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com UNIT Volts μA nA Rev F 3-2012 BVCES MIN 052-6223 Symbol Characteristic / Test Conditions DYNAMIC CHARACTERISTICS Symbol Test Conditions Coes Output Capacitance Cres Reverse Transfer Capacitance Total Gate Charge Qge Gate-Emitter Charge Qgc Gate-Collector ("Miller ") Charge tf td(on) tr td(off) tf Turn-on Delay Time 450 180 310 275 410 19 30 I C = IC2 120 180 Resistive Switching (25°C) 20 40 95 190 I C = IC2 315 470 RG = 10Ω 245 490 25 50 Inductive Switching (150°C) 59 120 VCLAMP(Peak) = 0.66VCES 430 650 VGE = 15V 65 130 1.6 3.2 2.4 4.8 4.0 8.0 Inductive Switching (25°C) 26 50 VCLAMP(Peak) = 0.66VCES 63 125 VGE = 15V 395 590 68 140 3.4 7.0 Gate Charge VGE = 15V VCC = 0.5VCES VGE = 15V VCC = 0.5VCES Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-off Switching Energy Ets Total Switching Losses tf 310 VCE = 25V f = 1 MHz Fall Time Eoff td(off) 3590 Turn-off Delay Time Turn-on Switching Energy tr 3125 VGE = 0V Rise Time Eon td(on) MAX 3 Qg td(off) MIN Capacitance Input Capacitance tr TYP Characteristic Cies td(on) APT60GT60BR_SRG Turn-on Delay Time Rise Time I C = IC2 RG = 10Ω TJ = +150°C Turn-off Delay Time I C = IC2 Fall Time Ets Total Switching Losses gfe Forward Transconductance RG = 5Ω TJ = +25°C 4 VCE = 20V, I C = IC2 UNIT pF nC ns ns mJ ns mJ S THERMAL AND MECHANICAL CHARACTERISTICS Symbol RθJC Junction to Case RθJA Junction to Ambient WT Rev F 3-2012 Torque 052-6223 Characteristic MIN Package Weight Mounting Torque (using a 6-32 or 3mm Binding Head Machine Screw) 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 IC = IC2, RGE = 25Ω, L = 36μH, Tj = 25°C 3 See MIL-STD-750 Method 3471 4 The maximum current is limited by lead temperature. Microsemi Reserves the right to change, without notice, the specifications and information contained herein. TYP MAX 0.25 UNIT °C/W 40 0.22 oz 6.1 gm 10 lb•in 1.1 N•m 9V 120 8V 80 7V 40 6V IC, COLLECTOR CURRENT (AMPERES) IC, COLLECTOR CURRENT (AMPERES) VGE=17, 15, 13, 11 & 10V GE 120 TC=+25°C TC=+150°C 80 TC=-55°C 40 0 0 1 2 3 4 5 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 3, Typical Output Characteristics @ VGE = 15V 10,000 Cies 1,000 f = 1MHz Coes Cres 100 0.01 0.1 1.0 10 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 5, Typical Capacitance vs Collector-To-Emitter Voltage 9V 120 8V 80 7V 40 6V 5V 0 4 8 12 16 20 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 2, Typical Output Characteristics (TJ = 150°C) 232 IC, COLLECTOR CURRENT (AMPERES) 250 μsec. Pulse Test V = 15V VGE=17, 15, 13, 11 & 10V 0 100 OPERATION LIMITED BY V (SAT) CE 100μs 1ms 10 5 10ms TC =+25°C TJ =+150°C SINGLE PULSE 1 VGE, GATE-TO-EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (AMPERES) 0 0 4 8 12 16 20 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 1, Typical Output Characteristics (TJ = 25°C) 160 C, CAPACITANCE (pF) APT60GT60BR_SRG 160 160 1 5 10 50 100 600 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 4, Maximum Forward Safe Operating Area 20 I = I C C2 T = +25°C VCE=120V J 16 VCE=300V 12 VCE=480V 8 4 0 0 100 200 300 400 Qg, TOTAL GATE CHARGE (nC) Figure 6, Gate Charges vs Gate-To-Emitter Voltage D=0.5 0.1 0.05 0.2 0.1 Note: 0.02 0.005 t2 0.01 SINGLE PULSE 0.001 10-5 t1 10-4 Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 10 Rev F 3-2012 0.01 052-6223 0.05 PDM ZθJC, THERMAL IMPEDANCE (°C/W) 0.5 3.5 IC1 3.0 2.5 IC2 2.0 0.5 IC2 1.5 IC, COLLECTOR CURRENT (AMPERES) 60 30 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) Figure 9, Maximum Collector Current vs Case Temperature 8.0 SWITCHING ENERGY LOSSES (mJ) V 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 10, Breakdown Voltage vs Junction Temperature 20 = 0.66 V CES V = +15V GE T = +25°C J I = I CC C 6.0 10 V CC V = 0.66 V CES = +15V = 10Ω GE R G IC2 0.5 IC2 C2 Eoff 4.0 Eon 2.0 0 0 20 40 60 80 100 RG, GATE RESISTANCE (OHMS) Figure 11, Typical Switching Energy Losses vs Gate Resistance 2.5 V IC1 1 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 12, Typical Switching Energy Losses vs. Junction Temperature 120 Rev F 3-2012 90 0 SWITCHING ENERGY LOSSES (mJ) TOTAL SWITCHING ENERGY LOSSES (mJ) BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED) 1.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 8, Typical VCE(SAT) Voltage vs Junction Temperature 1.2 052-6223 APT60GT60BR_SRG 120 IC, COLLECTOR CURRENT (AMPERES) VCE(SAT), COLLECTOR-TO-EMITTER SATURATION VOLTAGE (VOLTS) 4.0 = 0.66 V CES V = +15V GE T = +125°C J R = 10Ω CC 2.0 G Eoff 1.5 1.0 Eon 0.5 0 0 10 20 30 40 50 60 IC, COLLECTOR CURRENT (AMPERES) Figure 13, Typical Switching Energy Losses vs Collector Current For Both: Duty Cycle = 50% T = +125°C J T = +90°C sink Gate drive as specified Power dissapation = 140W I =I of fundamental LOAD RMS 10 1 0.1 1.0 10 F, FREQUENCY (KHz) Figure 14,Typical Load Current vs Frequency 100 1000 VCHARGE *DRIVER SAME TYPE AS D.U.T. VCC = 0.66 VCES Ets = E on + E off A A 90% VC B 10% B t d (on) VC IC t d(off) IC 100uH 90% D.U.T. VCE (SAT) tr VC A D.U.T. DRIVER* 10% IC RG V CLAMP 90% 10% tf E on t=2us E off Figure 15, Switching Loss Test Circuit and Waveforms 2 VCE(off) VGE(on) V CC 90% .5 VCES RL = I C2 2 D.U.T. 10% 1 From Gate Drive Circuitry VCE(on) VGE(off) t d (on) t d(off) tr RG 1 tf Figure 16, Resistive Switching Time Test Circuit and Waveforms 3 TO-247 Package Outline D PAK Package Outline e1 SAC: Tin, Silver, Copper 15.49 (.610) 16.26 (.640) Collector 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) Collector (Heat Sink) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) e3 SAC: Tin, Silver, Copper 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) Revised 4/18/95 20.80 (.819) 21.46 (.845) 1.04 (.041) 1.15(.045) 13.79 (.543) 13.99(.551) 13.41 (.528) 13.51(.532) Revised 8/29/97 11.51 (.453) 11.61 (.457) 3.50 (.138) 3.81 (.150) 0.40 (.016) 0.79 (.031) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 2.21 (.087) 2.59 (.102) 2.87 (.113) 3.12 (.123) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Gate Collector Emitter 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 1.27 (.050) 1.40 (.055) 1.22 (.048) 1.32 (.052) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.} Emitter Collector Gate Dimensions in Millimeters (Inches) 3.81 (.150) 4.06 (.160) (Base of Lead) Heat Sink (Collector) and Leads are Plated Rev F 3-2012 4.50 (.177) Max. 052-6223 0.46 (.018) 0.56 (.022) {3 Plcs}