APTC60HM35T3G

APTC60HM35T3G VDSS = 600V RDSon = 35m max @ Tj = 25°C ID = 72A @ Tc = 25°C Full - Bridge Super Junction MOSFET Power Module Application  Welding converters  Switched Mode Power Supplies  Uninterruptible Power Supplies Features  Super junction MOSFET - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged  Kelvin source for easy drive  Very low stray inductance  Internal thermistor for temperature monitoring Benefits  Outstanding performance at high frequency operation  Direct mounting to heatsink (isolated package)  Low junction to case thermal resistance  Solderable terminals both for power and signal for easy PCB mounting  Low profile  Each leg can be easily paralleled to achieve a phase leg of twice the current capability  RoHS Compliant All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 … All ratings @ Tj = 25°C unless otherwise specified Absolute maximum ratings (per super junction MOSFET) IDM VGS RDSon PD IAR EAR EAS Tc = 25°C Tc = 80°C Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25°C Max ratings 600 72 54 200 ±20 35 416 20 1 1800 Unit V A November, 2017 ID Parameter Drain - Source Voltage V m W A mJ These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. www.microsemi.com 1-7 APTC60HM35T3G – Rev 3 Symbol VDSS APTC60HM35T3G Electrical Characteristics (per super junction MOSFET) Symbol IDSS RDS(on) VGS(th) IGSS Characteristic Zero Gate Voltage Drain Current Drain – Source on Resistance Gate Threshold Voltage Gate – Source Leakage Current Test Conditions VGS = 0V,VDS = 600V VGS = 10V, ID = 72A VGS = VDS, ID = 5.4mA VGS = ±20 V, VDS = 0V Min Typ 2.1 3 Min Typ 14 5.13 0.42 Max 40 35 3.9 ±150 Unit µA m V nA Max Unit Dynamic Characteristics (per super junction MOSFET) Symbol Ciss Coss Crss Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Total gate Charge Qgs Gate – Source Charge Qgd Gate – Drain Charge Td(on) Turn-on Delay Time Tr Td(off) Tf Rise Time Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Eon Turn-on Switching Energy Eoff Turn-off Switching Energy RthJC Junction to Case Thermal Resistance Test Conditions VGS = 0V VDS = 25V f = 1MHz nF 518 VGS = 10V VBus = 300V ID = 72A 58 nC 222 21 Inductive Switching @ 125°C VGS = 15V VBus = 400V ID = 72A RG = 2.5 30 ns 283 84 Inductive switching @ 25°C VGS = 15V, VBus = 400V ID = 72A, RG = 2.5Ω Inductive switching @ 125°C VGS = 15V, VBus = 400V ID = 72A, RG = 2.5Ω 1340 µJ 1960 2192 µJ 2412 0.30 °C/W Source - Drain diode ratings and characteristics (per super junction MOSFET) trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions Min Tc = 25°C Tc = 80°C Typ 72 54 VGS = 0V, IS = - 72A IS = - 72A VR = 350V diS/dt = 200A/µs Max Unit A 1.2 6 V V/ns Tj = 25°C 580 ns Tj = 25°C 46 µC www.microsemi.com November, 2017  dv/dt numbers reflect the limitations of the circuit rather than the device itself. VR  VDSS Tj  150°C IS  - 72A di/dt  200A/µs 2-7 APTC60HM35T3G – Rev 3 Symbol Characteristic IS Continuous Source current (Body diode) VSD Diode Forward Voltage dv/dt Peak Diode Recovery  APTC60HM35T3G Thermal and package characteristics Symbol VISOL TJ TJOP TSTG TC Torque Wt Characteristic RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz Operating junction temperature range Recommended junction temperature under switching conditions Storage Temperature Range Operating Case Temperature Mounting torque To heatsink M4 Package Weight Min 4000 -40 -40 -40 -40 2.5 Max Unit V 150 TJmax -25 125 100 4.7 110 °C N.m g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol R25 ∆R25/R25 B25/85 ∆B/B Characteristic Resistance @ 25°C Min T25 = 298.15 K TC=100°C RT  R25 Typ 50 5 3952 4 Max Unit k % K % T: Thermistor temperature 1  RT: Thermistor value at T   1   exp B25 / 85   T25 T   See application note 1906 - Mounting Instructions for SP3F Power Modules on www.microsemi.com www.microsemi.com 3-7 APTC60HM35T3G – Rev 3 November, 2017 Package outline (dimensions in mm) APTC60HM35T3G Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.35 0.3 0.9 0.25 0.7 0.2 0.5 0.15 0.3 0.1 0.1 0.05 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) Transfert Characteristics VGS=15&10V 6.5V 6V 5.5V 5V 4.5V VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle 240 200 160 120 4V 80 TJ=125°C 40 TJ=25°C TJ=-55°C 0 5 10 15 20 VDS, Drain to Source Voltage (V) 25 0 1.05 VGS=10V VGS=20V 1 7 DC Drain Current vs Case Temperature 80 RDS(on) vs Drain Current 1.1 Normalized to VGS=10V @ 36A 1 2 3 4 5 6 VGS, Gate to Source Voltage (V) 0.95 0.9 70 60 50 40 30 20 10 20 40 60 80 100 120 ID, Drain Current (A) www.microsemi.com 25 50 75 100 125 TC, Case Temperature (°C) November, 2017 0 0 150 4-7 APTC60HM35T3G – Rev 3 0 RDS(on) Drain to Source ON Resistance ID, Drain Current (A) 280 ID, DC Drain Current (A) ID, Drain Current (A) Low Voltage Output Characteristics 400 360 320 280 240 200 160 120 80 40 0 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (°C) TJ, Junction Temperature (°C) Maximum Safe Operating Area Threshold Voltage vs Temperature 1000 1.1 ID, Drain Current (A) 1.0 0.9 0.8 0.7 100 1 ms Single pulse TJ=150°C TC=25°C 10 0.6 100 µs limited by RDSon 10 ms 1 -50 -25 0 25 50 75 100 125 150 1 Ciss Coss 1000 Crss 100 10 0 100 1000 Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) Capacitance vs Drain to Source Voltage 100000 10000 10 VDS, Drain to Source Voltage (V) TC, Case Temperature (°C) 14 ID=72A TJ=25°C 12 10 10 20 30 40 50 VDS, Drain to Source Voltage (V) www.microsemi.com VDS=120V VDS=300V 8 VDS=480V 6 4 2 0 0 100 200 300 400 Gate Charge (nC) 500 600 November, 2017 VGS(TH), Threshold Voltage (Normalized) 1.2 C, Capacitance (pF) VGS=10V ID= 72A 5-7 APTC60HM35T3G – Rev 3 BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature 1.2 RDS(on), Drain to Source ON resistance (Normalized) APTC60HM35T3G APTC60HM35T3G Delay Times vs Current 350 td(off) 300 250 VDS=400V RG=2.5Ω TJ=125°C L=100µH 200 150 100 50 VDS=400V RG=2.5Ω TJ=125°C L=100µH 100 80 tr and tf (ns) 60 40 tr 20 td(on) 0 0 0 20 40 60 80 100 120 0 20 40 ID, Drain Current (A) Switching Energy (mJ) 120 Eon VDS=400V ID=72A TJ=125°C L=100µH 8 6 Eoff Eon 4 2 0 20 40 60 80 100 ID, Drain Current (A) 120 ZCS ZVS 100 80 VDS=400V D=50% RG=2.5Ω TJ=125°C TC=75°C 5 10 15 20 25 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000 IDR, Reverse Drain Current (A) 120 0 hard switching TJ=150°C 100 0 15 20 25 30 35 40 45 50 55 60 65 ID, Drain Current (A) www.microsemi.com TJ=25°C 10 1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 November, 2017 Switching Energy (mJ) Eoff Operating Frequency vs Drain Current Frequency (kHz) 100 Switching Energy vs Gate Resistance 140 20 80 10 VDS=400V RG=2.5Ω TJ=125°C L=100µH 0 40 60 ID, Drain Current (A) Switching Energy vs Current 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 60 tf VSD, Source to Drain Voltage (V) 6-7 APTC60HM35T3G – Rev 3 td(on) and td(off) (ns) Rise and Fall times vs Current 120 APTC60HM35T3G DISCLAIMER The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. 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