VMMK-2503-TR2G

VMMK-2503 1 to 12 GHz GaAs Wideband Amplifier in Wafer Level Package Data Sheet Description Features Avago’s VMMK-2503 is an easy-to-use broadband, high linearity amplifier in a miniaturized wafer level package (WLP). The wide band and unconditionally stable performance makes this amplifier suitable as a gain block or a transmitter driver in many applications from 1–12GHz. A 5V, 65mA power supply is required for optimal performance. • 1 x 0.5 mm Surface Mount Package This amplifier is fabricated with enhancement E-pHEMT technology and industry leading wafer level package. The GaAsCap wafer level package is small and ultra thin yet can be handled and placed with standard 0402 pick and place assembly. This product is easy to use since it requires only positive DC voltages for bias and no matching coefficients are required for impedance matching to 50 Ω systems. • RoHS6 + Halogen Free WLP 0402, 1mm x 0.5mm x 0.25 mm • Ultrathin (0.25mm) • Unconditionally Stable • Ultrawide Bandwidth • Gain Block or Driver Amplifier Typical Performance (Vdd = 5.0V, Idd = 65mA) • Output IP3: 27dBm • Small-Signal Gain: 13.5dB • Noise Figure: 3.4dB Applications • 2.4 GHz, 3.5GHz, 5-6GHz WLAN and WiMax notebook computer, access point and mobile wireless applications GY • 802.16 & 802.20 BWA systems • Radar, radio and ECM systems • UWB Pin Connections (Top View) Input Input Note: “G” = Device Code “Y” = Month Code GY Amp Output / Vdd Output / Vdd Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model = 60V ESD Human Body Model = 625V Refer to Avago Application Note A004R: Electrostatic Discharge, Damage and Control. Table 1. Absolute Maximum Ratings [1] Sym Parameters/Condition Unit Absolute Max Vd Supply Voltage (RF Output) [2] V 6 Id Device Current [2] mA 120 Pin, max CW RF Input Power (RF Input) [3] dBm +20 Pdiss Total Power Dissipation mW 720 Tch Max channel temperature °C 150 θjc Thermal Resistance [4] °C/W 140 Notes 1. Operation in excess of any of these conditions may result in permanent damage to this device. 2. Bias is assumed DC quiescent conditions 3. With the DC (typical bias) and RF applied to the device at board temperature Tb = 25°C 4. Thermal resistance is measured from junction to board using IR method Table 2. DC and RF Specifications TA= 25°C, Frequency = 6 GHz, Vd = 5V, Zin = Zout = 50Ω (unless otherwise specified) Sym Parameters/Condition Unit Minimum Typ. Maximum Id Device Current mA 46 68 88 NF[1,2] Noise Figure dB – 3.04 4.1 Ga [1,2] Associated Gain dB 12.5 13.5 18 OIP3 [1,2,3] Output 3rd Order Intercept dBm +27 – P-1dB[1,2] Output Power at 1dB Gain Compression dBm +17 – IRL [1,2] Input Return Loss dB – -14 – ORL [1,2] Output Return Loss dB – -20 – Notes: 1. Losses of test systems have been de-embedded from final data 2. Measure Data obtained from wafer-probing 3. OIP3 test condition: F1 = 6.0GHz, F2 = 6.01GHz, Pin = -20dBm 2 Product Consistency Distribution Charts at 6.0 GHz, Vd = 5 V Id @ 5V, Mean=68mA, USL=88mA Gain @ 6GHz, Mean=13.5dB, LSL=12.5dB, USL=18dB Note: Distribution data based on ~50Kpcs sample size from MPV lots. 3 NF@ 6GHZ, Mean=3.04dB, USL=4.1dB VMMK-2503 Typical Performance 20 5 15 4 NoiseFigure (dB) S21 (dB) (TA = 25°C, Vdd = 5V, Idd = 65mA, Zin = Zout = 50 Ω unless noted) 10 2 5 0 3 1 3 5 7 9 Frequency (GHz) 11 1 13 Figure 1. Small-signal Gain [1] 1 3 5 7 9 Frequency (GHz) 11 13 5 7 9 Frequency (GHz) 11 13 5 7 9 Frequency (GHz) 11 13 Figure 2. Noise Figure [1] 0 0 -5 S12 (dB) S11 (dB) -10 -10 -20 -15 -20 1 3 5 7 9 Frequency (GHz) 11 -30 13 Figure 3. Input Return Loss [1] 1 3 Figure 4. Isolation [1] 0 IP3 & P1dB (dBm) 40 S22 (dB) -10 -20 30 20 10 OIP3 OP1dB -30 1 3 5 7 9 Frequency (GHz) Figure 5. Output Return Loss [1] 11 13 0 1 3 Figure 6. Output IP3 [1,2] Notes: 1. Data taken on a G-S-G probe substrate fully de-embedded to the reference plane of the package 2. Output IP3 data taken at Pin=-15dBm 4 VMMK-2503 Typical Performance (continue) (TA = 25°C, Vdd = 5V, Idd = 65mA, Zin = Zout = 50 Ω unless noted) 20 70 60 50 10 Idd (mA) S21 (dB) 15 5 0 5V 4.5V 4V 1 3 40 30 20 10 5 7 9 Frequency (GHz) 11 0 13 Figure 7. Gain over Vdd [1] 1 2 3 Vdd (V) 4 5 Figure 8. Total Current [1] 4.5 0 NoiseFigure (dB) 4 S11 (dB) -10 -20 5V 4.5V 4V -30 1 3 3 5V 4.5V 4V 2.5 5 7 9 Frequency (GHz) 11 2 13 Figure 9. Input Return Loss over Vdd [1] 1 3 7 9 Frequency (GHz) 11 13 25 5V 4.5V 4V 4V 4.5V 5V 20 S22 (dB) OP1dB (dBm) -10 -20 15 10 1 3 5 7 9 Frequency (GHz) Figure 11. Output Return Loss Over Vdd [1] 11 13 5 1 3 5 7 9 Frequency (GHz) Figure 12. Output P1dB Over Vdd [1] Note: 1. Data taken on a G-S-G probe substrate fully de-embedded to the reference plane of the package 5 5 Figure 10. Noise Figure over Vdd [1] 0 -30 3.5 11 13 VMMK-2503 Typical Performance (continue) (TA = 25°C, Vdd = 5V, Idd = 65mA, Zin = Zout = 50 Ω unless noted) 40 20 OP1dB (dBm) OIP3 (dBm) 30 20 4V 4.5V 5V 10 0 1 3 5 7 9 Frequency (GHz) 11 20 5 15 4 10 25C 85C -40C 5 0 1 3 25C -40C 85C 1 3 7 9 Frequency (GHz) 11 5 7 9 Frequency (GHz) 13 3 -45C 25C 85C 2 11 1 13 Figure 15. Gain over Temp [3] 1 3 5 7 9 Frequency (GHz) 11 13 Figure 16. Noise Figure over Temp [3] 0 0 25C -40C 85C 25C -40C 85C -10 S11 (dB) S22 (dB) -10 -20 -30 -20 1 3 5 7 9 Frequency (GHz) Figure 17. Input Return Loss Over Temp [3] 11 13 -30 1 3 5 7 9 Frequency (GHz) Figure 18. Output Return Loss Over Temp [3] Notes: 1. Data taken on a G-S-G probe substrate fully de-embedded to the reference plane of the package 2. Output IP3 data taken at Pin=-15dBm 3. Over temp data taken on a test fixture (Figure 20) without de-embedding 6 5 Figure 14. Output IP3 over Vdd [1,2] NoiseFigure (dB) S21 (dB) 10 5 13 Figure 13. Output P1dB over Temp [3] 15 11 13 VMMK-2503 Typical S-parameters (TA = 25°C, Vdd = 5V, Idd = 65mA, Zin = Zout = 50 Ω unless noted) 7 Freq GHz S11 S21 S12 S22 Mag dB Phase Mag dB Phase Mag dB Phase Mag dB Phase 1 0.32 -9.94 -58.82 5.73 15.16 157.97 0.10 -20.26 17.70 0.11 -19.18 -82.09 2 0.19 -14.31 -63.36 5.34 14.54 146.59 0.10 -19.58 6.88 0.08 -21.51 -116.84 3 0.16 -15.75 -62.41 5.22 14.35 133.94 0.11 -19.32 1.32 0.09 -21.40 -127.88 4 0.17 -15.65 -68.23 5.13 14.20 120.62 0.11 -19.14 -2.44 0.09 -20.96 -135.63 5 0.17 -15.19 -75.79 5.02 14.02 106.87 0.11 -18.91 -5.92 0.09 -21.32 -144.09 6 0.18 -14.78 -87.11 4.90 13.80 93.04 0.12 -18.67 -9.42 0.08 -21.68 -155.26 7 0.19 -14.44 -99.64 4.75 13.54 79.16 0.12 -18.45 -13.07 0.08 -21.97 -166.36 8 0.20 -14.12 -114.81 4.58 13.23 65.36 0.12 -18.22 -17.02 0.08 -22.44 -177.07 9 0.20 -14.04 -131.20 4.40 12.87 51.67 0.13 -18.04 -21.15 0.07 -23.45 171.57 10 0.20 -13.87 -150.35 4.19 12.44 38.17 0.13 -17.87 -25.41 0.06 -25.01 159.23 11 0.21 -13.60 -169.56 3.97 11.98 24.99 0.13 -17.74 -29.85 0.04 -26.97 144.70 12 0.22 -13.03 169.40 3.75 11.48 12.06 0.13 -17.67 -34.27 0.03 -29.82 128.66 13 0.24 -12.24 149.90 3.53 10.94 -0.50 0.13 -17.60 -38.63 0.02 -33.72 105.68 14 0.27 -11.38 131.14 3.30 10.38 -12.65 0.13 -17.58 -43.09 0.01 -38.20 58.43 15 0.30 -10.41 115.07 3.09 9.79 -24.56 0.13 -17.53 -47.40 0.01 -37.52 -7.15 16 0.34 -9.46 99.90 2.88 9.19 -36.14 0.13 -17.52 -51.43 0.02 -35.60 -43.96 17 0.37 -8.69 86.76 2.68 8.57 -47.41 0.13 -17.48 -55.43 0.02 -34.56 -75.88 18 0.40 -7.97 74.14 2.50 7.95 -58.26 0.14 -17.38 -59.63 0.02 -32.77 -114.10 19 0.43 -7.25 63.67 2.33 7.33 -68.81 0.14 -17.30 -63.51 0.04 -29.02 -141.61 20 0.46 -6.81 53.97 2.17 6.73 -79.06 0.14 -17.17 -67.56 0.05 -25.71 -158.63 21 0.48 -6.34 44.61 2.03 6.14 -89.16 0.14 -16.98 -71.95 0.07 -23.24 -171.34 22 0.50 -5.99 36.42 1.90 5.56 -99.02 0.14 -16.80 -76.07 0.09 -21.38 176.10 23 0.52 -5.75 28.20 1.78 5.00 -108.79 0.15 -16.51 -80.97 0.10 -19.69 163.29 24 0.52 -5.60 20.04 1.67 4.45 -118.23 0.15 -16.27 -85.94 0.13 -17.99 152.12 25 0.53 -5.44 11.74 1.58 3.95 -127.94 0.16 -15.93 -91.73 0.15 -16.23 141.89 26 0.54 -5.31 3.35 1.49 3.44 -137.60 0.17 -15.63 -97.31 0.18 -15.01 131.61 27 0.55 -5.25 -4.75 1.40 2.92 -147.29 0.17 -15.30 -103.67 0.21 -13.76 122.83 28 0.55 -5.18 -13.14 1.32 2.41 -156.96 0.18 -14.97 -110.73 0.23 -12.60 115.49 29 0.56 -5.10 -21.24 1.24 1.87 -166.74 0.19 -14.65 -117.22 0.25 -11.87 107.66 30 0.56 -4.97 -28.87 1.17 1.37 -176.51 0.19 -14.44 -125.53 0.27 -11.27 98.81 31 0.57 -4.86 -37.32 1.10 0.85 173.80 0.20 -14.07 -133.23 0.29 -10.66 91.12 32 0.58 -4.73 -45.58 1.04 0.33 163.80 0.20 -13.82 -141.57 0.31 -10.18 82.29 33 0.59 -4.57 -53.12 0.98 -0.20 153.80 0.21 -13.63 -150.48 0.32 -9.78 72.68 34 0.61 -4.32 -60.88 0.92 -0.73 143.95 0.22 -13.32 -159.58 0.34 -9.35 64.58 35 0.63 -4.08 -68.98 0.86 -1.32 133.28 0.22 -13.22 -169.26 0.35 -9.07 55.81 36 0.64 -3.86 -75.63 0.81 -1.87 123.11 0.22 -13.01 -179.29 0.37 -8.67 45.15 VMMK-2503 Application and Usage (Please always refer to the latest Application Note AN5378 in website) Biasing and Operation The VMMK-2503 is normally biased with a positive drain supply connected to the output pin through an external bias-tee and with bypass capacitors as shown in Figure 19. The recommended drain supply voltage is 5 V and the corresponding drain current is approximately 65mA. The input of the VMMK-2503 is AC coupled and a DC-blocking capacitor is not required. Aspects of the amplifier performance may be improved over a narrower bandwidth by application of additional conjugate, linearity, or low noise (Γopt) matching. Figure 20. Evaluation/Test Board (available to qualified customer request) Vdd 0.1 uF Vdd 100 pF Size: 1.1 mm x 0.6 mm (0402 component) 0.1 uF 10 nH 100 pF Input Input Output Amp Input Pad Ground Pad 50 Ohm line Output Pad Bias-Tee Input Pad Ground Pad 50 Ohm line Output Pad 100 pF 50 Ohm line Figure 21. Example application of VMMK-2503 at 5.8GHz 50 Ohm line Figure 19. Usage of the VMMK-2503 Biasing the device at 5V compared to 4V results in higher gain, higher IP3 and P1dB. In a typical application, the biastee can be constructed using lumped elements. The value of the output inductor can have a major effect on both low and high frequency operation. The demo board uses an 10nH inductor that has self resonant frequency higher than the maximum desired frequency of operation. At frequencies higher than 6GHz, it may be advantageous to use a quarter-wave long micro-strip line to act as a highimpedance at the desired frequency of operation. This technique proves a good solution but only over relatively narrow bandwidths. Another approach for broadbanding the VMMK-2503 is to series two different value inductors with the smaller value inductor placed closest to the device and favoring the higher frequencies. The larger value inductor will then offer better low frequency performance by not loading the output of the device. The parallel combination of the 100pF and 0.1uF capacitors provide a low impedance in the band of operation and at lower frequencies and should be placed as close as possible to the inductor. The low frequency bypass provides good rejection of power supply noise and also provides a low impedance termination for third order low frequency mixing products that will be generated when multiple in-band signals are injected into any amplifier. 8 Output Amp Size: 1.1 mm x 0.6 mm (0402 component) Refer the Absolute Maximum Ratings table for allowed DC and thermal conditions. S Parameter Measurements The S-parameters are measured on a .016 inch thick RO4003 printed circuit test board, using G-S-G (ground signal ground) probes. Coplanar waveguide is used to provide a smooth transition from the probes to the device under test. The presence of the ground plane on top of the test board results in excellent grounding at the device under test. A combination of SOLT (Short - Open - Load - Thru) and TRL (Thru - Reflect - Line) calibration techniques are used to correct for the effects of the test board, resulting in accurate device S-parameters. The reference plane for the S Parameters is at the edge of the package. The product consistency distribution charts shown on page 2 represent data taken by the production wafer probe station using a 300um G-S wafer probe. The ground-signal probing that is used in production allows the device to be probed directly at the device with minimal common lead inductance to ground. Therefore there will be a slight difference in the nominal gain obtained at the test frequency using the 300um G-S wafer probe versus the 300um G-S-G printed circuit board substrate method. fy the device rial with one tal. Soldering sion than FR5 materials with ge of the base evice circuitry GaAs package to damaging s RO4003 and al and should ng source leads leads of the unt. The recern is shown ned footprint t borders the en. re any plated ng and tests hin .003”) and ure 5 provides VMMK-3XXX kness RO4350 e also applies t frequencies -1XXX FETs at ductance may may be placed bility. Consult ation. of the VMMK that the VIAs om under the of the VIAs is e VIAs should Outline Drawing 1.004 MIN, 1.085 MAX PIN ONE INDICATOR 0.125 0.125 GROUND PAD 0.500 MIN, 0.585 MAX 0.470 OUTPUT PAD 0.390 0.160 INPUT PAD 0.160 Notes: Solderable area of the device shown in yellow. Dimensions in mm. Tolerance ± 0.015 mm Suggested PCB Material and Land Pattern Recommended SMT Attachment The VMMK Packaged Devices are compatible with high volume surface mount PCB assembly processes. 1.2 (0.048) 0.400 (0.016) 0.100 (0.004) 0.076 max (0.003) 2pl see discussion 0.381 (0.015) 2pl 1. Follow ESD precautions while handling packages. 0.100 (0.004) 0.500 (0.020) Part of Input Circuit Manual Assembly for Prototypes 0.500 (0.020) 2. Handling should be along the edges with tweezers or from topside if using a vacuum collet. Part of Output Circuit 3. Recommended attachment is solder paste. Please see recommended solder reflow profile. Conductive epoxy is not recommended. Hand soldering is not recommended. 0.200 (0.008) 0.200 (0.008) 0.7 (0.028) 0.254 dia PTH (0.010) 4pl Solder Mask 0.400 dia (0.016) 4pl Notes: Figure 5. Recommended PCB layout for VMMK devices 1. 0.010” Rogers RO4350 As a general rule, if a VIA is within .004” (100u) of the edge of the soldermask but not under the device, then the VIA should be filled. Any VIA which is covered by the solder mask and is beyond .004” (100u) of the solder mask edge can be uncapped and unfilled as it is not at risk of wicking away solder from the device. If for any reason it is required to include a VIA or VIAs under a VMMK device, then the VIAs should be filled and capped. A capped VIA is a “plated over” filled VIA. If a filled but uncapped VIA is placed under the device, there will not be enough solderable surface area for device attachment. If an unfilled and uncapped VIA is placed directly under the ground pad, then the liquid solder will flow into the open VIA hole during the reflow process and deplete the solder volume to varying degrees from under the ground pad. Depletion of the solder volume 9due to unfilled VIAs may lead to a weak solder joint, poor grounding of the device, and/or stresses compromising the structural integrity of the package. The recommended footprint provides a solder joint 4. Apply solder paste using either a stencil printer or dot placement. The volume of solder paste will be dependent on PCB and component layout and should be controlled to ensure consistent mechanical and electrical performance. Excessive solder will degrade RF performance. 5. Follow solder paste and vendor’s recommendations when developing a solder reflow profile. A standard profile will have a steady ramp up from room temperature to the pre-heat temp to avoid damage due to thermal shock. 6. Packages have been qualified to withstand a peak temperature of 260°C for 20 to 40 sec. Verify that the profile will not expose device beyond these limits. 7. Clean off flux per vendor’s recommendations. 8. Clean the module with Acetone. Rinse with alcohol. Allow the module to dry before testing. Ordering Information Part Number Devices Per Container Container VMMK-2503-BLKG 100 Antistatic Bag VMMK-2503-TR1G 5000 7” Reel Package Dimension Outline D Die dimension: E A Dim Range Unit D 1.004 - 1.085 mm E 0.500 - 0.585 mm A 0.225 - 0.275 mm Note: All dimensions are in mm Reel Orientation Device Orientation USER FEED DIRECTION REEL 4 mm TOP VIEW Note: “G” = Device Code ”Y” = Month Code •GY •GY 10 CARRIER TAPE •GY •GY USER FEED DIRECTION 8 mm END VIEW Tape Dimensions T Do Note: 1 Po B A A P1 Scale 5:1 Bo W Note: 2 F E 5° (Max) B D1 BB SECTION Note: 2 P2 Ao R0.1 5° (Max) Ko Ao = 0.73±0.05 mm Scale 5:1 Bo = 1.26±0.05 mm AA SECTION mm Ko = 0.35 +0.05 +0 Unit: mm Symbol Spec. K1 Po P1 P2 Do D1 E F 10Po W T – 4.0±0.10 4.0±0.10 2.0±0.05 1.55±0.05 0.5±0.05 1.75±0.10 3.50±0.05 40.0±0.10 8.0±0.20 0.20±0.02 Notice: 1. 10 Sprocket hole pitch cumulative tolerance is ±0.1mm. 2. Pocket position relative to sprocket hole measured as true position of pocket not pocket hole. 3. Ao & Bo measured on a place 0.3mm above the bottom of the pocket to top surface of the carrier. 4. Ko measured from a plane on the inside bottom of the pocket to the top surface of the carrier. 5. Carrier camber shall be not than 1m per 100mm through a length of 250mm. For product information and a complete list of distributors, please go to our web site: www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright © 2005-2015 Avago Technologies. All rights reserved. AV02-2004EN - January 20, 2015