FMMT449TA

FMMT449 tf,tr,td IB1=IB2=IC/10 ns VCE=10V COMPLEMENTARY TYPE – PARTMARKING DETAIL – IC/IB=10 0.4 0.2 0.001 0.01 tr 800 td 0.1 50 ts 400 tf tr 200 td 0 10 1 ABSOLUTE MAXIMUM RATINGS. 600 0.01 0 0.1 1 IC - Collector Current (Amps) VCE(sat) v IC Switching Speeds 1.8 200 1.6 160 1.4 - (Volts) h 1.0 0.8 0.6 0.4 V 40 0.001 0.01 0.1 1 0.001 0.1 1 IC - Collector Current (Amps) hFE v IC VBE(sat) v IC 10 10 I -Collector Current (A) 1.6 1.4 - (Volts) 0.01 IC - Collector Current (Amps) 1.8 VCE=2V 1.2 1.0 0.8 0.6 V 0.2 10 0.4 1 DC 1s 100ms 0.1 10ms 1ms 100 µs C 0.2 PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 2 A Continuous Collector Current IC 1 A Base Current IB 200 mA 500 mW -55 to +150 °C Power Dissipation at Tamb = 25°C Ptot Operating and Storage Temperature Range Tj:Tstg ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). IC/IB=10 1.2 VCE=2V 80 0 PARAMETER SYMBOL UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 50 V IC=1mA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 30 V IC=10mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=100µ A, IC=0 Collector Cut-Off Current ICBO 0.1 10 µA µA VCB=40V, IE=0 VCB=40V, Tamb=100°C Emitter Cut-Off Current IEBO 0.1 µA VEB=4V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) 0.5 1.0 V V IC=1A, IB=100mA* IC=2A, IB=200mA* Base-Emitter Saturation Voltage VBE(sat) 1.25 V IC=1A, IB=100mA* Base-Emitter Turn-On Voltage VBE(on) 1.0 V IC=1A, VCE=2V* Static Forward Current Transfer Ratio hFE 70 100 80 40 Transition Frequency fT 150 Output Capacitance Cobo 0.01 0.1 0.001 0.01 B ns IC - Collector Current (Amps) 120 FMMT549 449 ts 100 ts 0 E C tf Switching time V - (Volts) 150 0.6 FMMT449 ISSUE 3 - NOVEMBER 1995 FEATURES * Low equivalent on-resistance; RCE(sat) 250mΩ at 1A TYPICAL CHARACTERISTICS 0.8 SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR 0.1 1 1 10 10 IC - Collector Current (Amps) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area 3 - 107 100 MIN. MAX. IC=50mA, VCE=2V* IC=500mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* 300 15 MHz IC=50mA, VCE=10V f=100mHz pF VCB=10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 106 FMMT449 tf,tr,td IB1=IB2=IC/10 ns VCE=10V COMPLEMENTARY TYPE – PARTMARKING DETAIL – IC/IB=10 0.4 0.2 0.001 0.01 tr 800 td 0.1 50 ts 400 tf tr 200 td 0 10 1 ABSOLUTE MAXIMUM RATINGS. 600 0.01 0 0.1 1 IC - Collector Current (Amps) VCE(sat) v IC Switching Speeds 1.8 200 1.6 160 1.4 - (Volts) h 1.0 0.8 0.6 0.4 V 40 0.001 0.01 0.1 1 0.001 0.1 1 IC - Collector Current (Amps) hFE v IC VBE(sat) v IC 10 10 I -Collector Current (A) 1.6 1.4 - (Volts) 0.01 IC - Collector Current (Amps) 1.8 VCE=2V 1.2 1.0 0.8 0.6 V 0.2 10 0.4 1 DC 1s 100ms 0.1 10ms 1ms 100 µs C 0.2 PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 2 A Continuous Collector Current IC 1 A Base Current IB 200 mA 500 mW -55 to +150 °C Power Dissipation at Tamb = 25°C Ptot Operating and Storage Temperature Range Tj:Tstg ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). IC/IB=10 1.2 VCE=2V 80 0 PARAMETER SYMBOL UNIT CONDITIONS. Collector-Base Breakdown Voltage V(BR)CBO 50 V IC=1mA, IE=0 Collector-Emitter Breakdown Voltage V(BR)CEO 30 V IC=10mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=100µ A, IC=0 Collector Cut-Off Current ICBO 0.1 10 µA µA VCB=40V, IE=0 VCB=40V, Tamb=100°C Emitter Cut-Off Current IEBO 0.1 µA VEB=4V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) 0.5 1.0 V V IC=1A, IB=100mA* IC=2A, IB=200mA* Base-Emitter Saturation Voltage VBE(sat) 1.25 V IC=1A, IB=100mA* Base-Emitter Turn-On Voltage VBE(on) 1.0 V IC=1A, VCE=2V* Static Forward Current Transfer Ratio hFE 70 100 80 40 Transition Frequency fT 150 Output Capacitance Cobo 0.01 0.1 0.001 0.01 B ns IC - Collector Current (Amps) 120 FMMT549 449 ts 100 ts 0 E C tf Switching time V - (Volts) 150 0.6 FMMT449 ISSUE 3 - NOVEMBER 1995 FEATURES * Low equivalent on-resistance; RCE(sat) 250mΩ at 1A TYPICAL CHARACTERISTICS 0.8 SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR 0.1 1 1 10 10 IC - Collector Current (Amps) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area 3 - 107 100 MIN. MAX. IC=50mA, VCE=2V* IC=500mA, VCE=2V* IC=1A, VCE=2V* IC=2A, VCE=2V* 300 15 MHz IC=50mA, VCE=10V f=100mHz pF VCB=10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 106