FMMV105GTA

SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE FMMV105G ISSUE 4 – JANUARY 1998 PIN CONFIGURATION 1 2 1 PARTMARKING DETAILS FMMV105G – 4EZ 3 3 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Power Dissipation at T amb=25°C P tot Operating and Storage Temperature Range T j:T stg VALUE UNIT 330 mW -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Reverse Breakdown Voltage V BR 30 Reverse current IR Series Inductance LS Diode Capacitance Temperature Coefficient T CC TYP. MAX. UNIT CONDITIONS. V I R = 10µA nA V R = 28V 3.0 nH f=250MHz 280 ppm/ °C V R = 3V, f=1MHz 10 TUNING CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. Diode Capacitance Cd Capacitance Ratio Figure of MERIT TYP. MAX. UNIT CONDITIONS. 1.8 2.8 pF V R = 25V, f=1MHz Cd / Cd 4.0 6.0 Q 250 350 Spice parameter data is available upon request for this device V R = 3V/25V, f=1MHz V R = 3V, f=50MHz