FMMV3102TA

SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE FMMV3102 ISSUE 3 – JANUARY 1998 PIN CONFIGURATION 1 2 1 PARTMARKING DETAIL FMMV3102 – 4C 3 3 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Power Dissipation at T amb=25°C P tot Operating and Storage Temperature Range T j:T stg VALUE UNIT 330 mW -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. Reverse Breakdown Voltage V BR 30 Reverse current IR Series Inductance LS Diode Capacitance Temperature Coefficient Case Capacitance TYP. MAX. UNIT CONDITIONS. V I R = 10µA nA V R = 25V 3.0 nH f=250MHz T CC 280 ppm/ °C V R = 3V, f=1MHz CC 0.1 pF 10 f=1MHz TUNING CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. Diode Capacitance Cd 20 Capacitance Ratio Cd / Cd 4.5 Figure of MERIT Q 200 TYP. MAX. UNIT CONDITIONS. 25 pF V R = 3V, f=1MHz V R = 3V/25V, f=1MHz 300 Spice parameter data is available upon request for this device V R = 3V, f=50MHz