FZTA42TA

Not Recommended for New Design Please Use DZTA42 SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FZTA42 ISSUE 23 –– NOVEMBER SEPTEMBER93 2007 ✪ ISSUE FEATURES * Suitable for video output stages in TV sets and switch mode power supplies * High breakdown voltage C E C COMPLIMENTARY TYPE – FZTA92 PARTMARKING DETAIL – DEVICE TYPE IN FULL B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 300 V Collector-Emitter Voltage VCEO 300 V Emitter-Base Voltage VEBO 5 V Base Current IB 100 mA Continuous Collector Current IC 500 mA Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 2 W -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage UNIT CONDITIONS. 300 V IC=100µ A, IE=0 V(BR)CEO 300 V IC=1mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE=100µ A, IC=0 Collector Cut-Off Current ICBO 0.1 µA VCB=200V, IE=0 Emitter Cut-Off Current IEBO 0.1 µA VEB=5V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) 0.5 V IC=20mA, IB=2mA Base-Emitter Saturation Voltage VBE(sat) 0.9 V IC=20mA, IB=2mA Static Forward Current hFE Transfer Ratio 25 40 40 Transition Frequency fT 50 Output Capacitance Cobo TYP. MAX. IC=1mA, VCE=10V* IC=10mA, VCE=10V* IC=30mA, VCE=10V* 6 MHz IC=10mA, VCE=20V f=20MHz pF VCB=20V, f=1MHz * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% For typical characteristics graphs see FMMTA42 datasheet. 3 - 302 Not Recommended for New Design Please Use DZTA42 FZTA42 MPSA42 120 VCE=10V 100 80 60 40 20 0.1 1.0 IC-Collector 10 140 fT Transition Frequency (MHz) hFE Static Forward Current Transfer Ratio 140 100 VCE=20V C 100 80 ABSOLUTE MAXIMUM RATINGS. 40 20 0 0.1 IC-Collector Current (mA) Current (mA) fT vs IC Single Pulse Test at Tamb=25°C 1A 0.3 10ms IC-Collector Current Amps VCE (sat) Collector-Emitter Saturation Voltage(Volts) 100 10 1.0 IC / IB=10 0 0.1 1.0 10 100 200 0.1 D.C. 0.01 0.001 1 IC-Collector Current (mA) 10 100 1000 VCE-Collector-Emitter Voltage (Volts) Safe operating area VCE(sat) vs IC PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 300 V Collector-Emitter Voltage VCEO 300 V Emitter-Base Voltage VEBO 6 V Continuous Collector Current IC 500 mA Power Dissipation at Tamb =25°C Ptot 680 mW Operating and Storage Temperature Range Tj:Tstg -55 to +175 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). 1ms 100ms PARAMETER SYMBOL MIN. Collector-Base Breakdown Voltage V(BR)CBO Collector-Emitter Breakdown Voltage UNIT CONDITIONS. 300 V IC=100µ A, IE=0 V(BR)CEO 300 V IC=1mA, IB=0* Emitter-Base Breakdown Voltage V(BR)EBO 6 V IE=100µ A, IC=0 Collector Cut-Off Current ICBO 0.1 µA VCB=200V, IE=0 Emitter Cut-Off Current IEBO 0.1 µA VEB=6V, IC=0 Collector-Emitter Saturation Voltage VCE(sat) 0.5 V IC=20mA, I B=2mA* Base-Emitter Saturation Voltage VBE(sat) 0.9 V IC=20mA, I B=2mA* Static Forward Current hFE Transfer Ratio 25 40 40 Transition Frequency fT 50 Output Capacitance Cobo TYP. MAX. IC=1mA, VCE=10V* IC=10mA, VCE=10V* IC=30mA, VCE=10V* 6 MHz IC=10mA, VCE=20V f=20MHz pF VCB=20V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% 3-79 B E E-Line TO92 Compatible 60 hFE vs IC 0.1 APPLICATIONS * Telephone dialler circuit 120 200 0.2 MPSA42 ISSUE 2 – MARCH 94 FEATURES * High voltage TYPICAL CHARACTERISTICS 160 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR 3-78