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TPS65192RHDR

TPS65192RHDR

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    VQFN-28_5X5MM-EP

  • 描述:

    IC LEVEL SHIFTER 9CH 28VQFN

  • 数据手册
  • 价格&库存
TPS65192RHDR 数据手册
TPS65192 www.ti.com ....................................................................................................................................................................................................... SLVS962 – JULY 2009 9-Channel Level Shifter With Gate Voltage Shaping and Discharge Functions • • • • • • • • • • • 9-Channel Level Shifter Supports 6 × CLK, VST, ODD, and EVEN Signals Organized as Two Groups of 7 + 2 Channels Separate Positive Supplies (VGHX) for Each Group VGHX Levels up to 38V VGL Levels Down to –13V Panel DISCHARGE Function Suitable for 4-Phase and 6-Phase Applications Gate Voltage Shaping on Channels 1 to 6 Supports Single and Multiple Flicker Clocks Peak Output Currents greater than 500mA 28-Pin 5×5 mm QFN Package APPLICATIONS • LCD Displays Using Gate-in-Panel (GIP) Technology DESCRIPTION The TPS65192 is a 9 channel level-shifter intended for use in LCD display applications such as TVs and monitors. The device converts the logic-level signals generated by the Timing Controller (T-CON) to the high-level signals used by the display panel. The 9 level shifter channels are organized as two groups. Channels 1 through 7 are powered from VGH1 and VGL, and channels 8 and 9 are powered from VGH2 and VGL. Each level-shifter channel features low impedance output stages that achieve fast rise and fall times even when driving the capacitive loading typically present in LCD display applications. A tenth level shifter channel specially configured with a comparator input stage allows designers to implement panel discharging during power-down. BLOCK DIAGRAM FLK1 FLK2 VGH1 FLK3 RE IN1 OUT1 IN2 OUT2 Gate Shaping FEATURES 1 IN3 IN4 OUT3 OUT4 IN5 OUT5 IN6 OUT6 IN7 OUT7 - VSENSE VREF GND + DISCHARGE VGL VGH2 IN8 OUT8 IN9 OUT9 Level shifter channels 1 through 6 support gate voltage shaping, which can be used to improve picture quality by reducing image sticking. Novel decoding logic enables a single flicker clock signal to control gate voltage shaping for all CLK channels without the need for synchronization. The device also supports the use of multiple flicker clocks. The rate of decay is set by an external resistor or resistor network connected to the RE pin. 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2009, Texas Instruments Incorporated TPS65192 SLVS962 – JULY 2009 ....................................................................................................................................................................................................... www.ti.com These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. ORDERING INFORMATION (1) (1) TA ORDERING PACKAGE PACKAGE MARKING –40°C to 85°C TPS65192RHDR 28-Pin QFN TPS65192 The device is supplied taped and reeled, with 3000 devices per reel. ABSOLUTE MAXIMUM RATINGS over operating free-air temperature range (unless otherwise noted) (1) VALUE UNIT –0.3 to 45 V VGL 0.3 to –15 V IN1 through IN9, VSENSE, FLK1, FLK2, FLK3 –0.3 to 7.0 V RE –0.3 to 45 V Output current RE 0.1 A ESD rating HBM 2 kV MM 200 V CDM 700 V Supply voltage (2) Input voltage (2) VGH1, VGH2 Continuous power dissipation See Dissipation Rating Table Operating ambient temperature range –40 to 85 °C Operating junction temperature range –40 to 150 °C Storage temperature range –65 to 150 °C 300 °C Lead temperature (soldering, 10 sec) (1) (2) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltage values are with respect to the GND pin. DISSIPATION RATINGS (1) PACKAGE θJA TA≤25°C POWER RATING TA=70°C POWER RATING TA=85°C POWER RATING 28-Pin QFN (1) 35°C/W 3.57W 2.29W 1.86W This data is based on using a JEDEC High-K board with the exposed die pad connected to a Cu pad on the board connected to the ground plane by a 2x3 thermal via matrix. RECOMMENDED OPERATING CONDITIONS MIN TYP MAX VGH1, VGH2 Positive supply voltage range 12 30 38 VGL Negative supply voltage range –13 –7 –2 V TA Operating ambient temperature –40 85 °C TJ Operating junction temperature –40 125 °C 2 Submit Documentation Feedback UNIT V Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TPS65192 TPS65192 www.ti.com ....................................................................................................................................................................................................... SLVS962 – JULY 2009 ELECTRICAL CHARACTERISTICS VGH1 = VGH2 = 30V; VGL = –7 V; TA = –40°C to 85°C; typical values are at 25°C (unless otherwise noted). PARAMETER TEST CONDITIONS MIN TYP MAX UNIT POWER SUPPLY IGH1 VGH1 Supply current IN1 to IN7 = GND; VSENSE = 0V 0.35 3 mA IGH2 VGH2 Supply current IN8 and IN9 = GND; VSENSE =0V 0.012 1 mA IGL VGL Supply current IN1 to IN9 = GND; VSENSE = 0V 0.144 4 mA VUVLO Undervoltage lockout threshold VGH1 rising VHYS Undervoltage lockout hysteresis VGH1 falling 10.5 13.5 450 V mV LEVEL SHIFTERS Continuous; OUT1 to OUT7 IOUTX Output current ±15 Peak; OUT1 to OUT7 ±300 Continuous; OUT8 and OUT9, DISCHARGE ±15 Peak; OUT8 an OUT9, DISCHARGE IN1 to IN9 = 3.3 V ±1 VIH High level input voltage IN1 to IN9 VIL Low level input voltage IN1 to IN9 VDROPH Output voltage drop high VDROPL Output voltage drop low tR Rise time tF Fall time Propagation delay mA ±250 ±1 Input current tPL ±150 IN1 to IN9 = GND IINX tPH mA ±650 2.0 0.5 0.12 0.4 OUT8 and OUT9, DISCHARGE; ILOAD = 10 mA 0.36 1.0 OUT1 to OUT7; ILOAD = –10 mA 0.07 0.3 OUT8 and OUT9, DISCHARGE; ILOAD = –10 mA 0.17 1.0 OUT1 to OUT7; CLOAD = 4.7 nF (1) 275 520 OUT8 and OUT9; CLOAD = 4.7 nF (1) 761 1000 OUT1 to OUT7; CLOAD = 4.7nF (1) 220 370 526 850 OUT8 and OUT9; CLOAD = 4.7 nF V V OUT1 to OUT7; ILOAD = 10 mA (1) µA Rising edge, CL = 150 pF 60 Falling edge, CL = 150 pF 60 V V ns ns ns GATE VOLTAGE SHAPING tPH Propagation delay – gate voltage shaping enabled FLK falling tSU Set-up time Time active IN signals must be stable before falling edge of FLK rDS(on) Resistance between OUT and RE pins ILEAK Leakage current from RE pin 70 100 ns 70 ns 100 Ω ±10 µA 1.725 V ±1 µA DISCHARGE VSENSE Discharge voltage sense threshold VSENSE falling ISENSE Discharge voltage sense input current VSENSE = 2V VHYS Discharge voltage sense hysteresis VSENSE rising (1) 1.275 1.5 40 mV Rise and fall times are measured between 10% and 90% of the waveform’s amplitude. Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TPS65192 3 TPS65192 SLVS962 – JULY 2009 ....................................................................................................................................................................................................... www.ti.com DEVICE INFORMATION VSENSE FLK1 FLK2 FLK3 RE GND DISCHARGE 28 27 26 25 24 23 22 PIN ASSIGNMENT IN9 1 21 OUT9 IN8 2 20 OUT8 IN7 3 19 OUT7 18 OUT6 Exposed Thermal Die 14 OUT3 OUT2 15 13 7 OUT1 IN3 12 OUT4 VGH2 16 11 6 VGL IN4 10 OUT5 VGH1 17 9 5 IN1 IN5 8 4 IN2 IN6 PIN FUNCTIONS PIN NAME NO. I/O DESCRIPTION IN9 1 I Level shifter channel 9 input. Connect this pin to GND, if not used. IN8 2 I Level shifter channel 8 input. Connect this pin to GND, if not used. IN7 3 I Level shifter channel 7 input. Connect this pin to GND, if not used. IN6 4 I Level shifter channel 6 input. Connect this pin to GND, if not used. IN5 5 I Level shifter channel 5 input. Connect this pin to GND, if not used. IN4 6 I Level shifter channel 4 input. Connect this pin to GND, if not used. IN3 7 I Level shifter channel 3 input. Connect this pin to GND, if not used. IN2 8 I Level shifter channel 2 input. Connect this pin to GND, if not used. IN1 9 I Level shifter channel 1 input. Connect this pin to GND, if not used. VGH1 10 P Positive supply voltage for level shifter channels 1 through 7 and discharge function. Bypass this pin with a parallel combination of 10µF and 100nF ceramic capacitors. VGL 11 P Negative supply voltage. Bypass this pin with a parallel combination of 10µF and 100nF ceramic capacitors. VGH2 12 P Positive supply voltage for level shifter channels 8 and 9. Bypass this pin with a parallel combination of 10µF and 100nF ceramic capacitors. OUT1 13 O Level shifter channel 1 output. Leave this pin floating, if not used. OUT2 14 O Level shifter channel 2 output. Leave this pin floating, if not used. OUT3 15 O Level shifter channel 3 output. Leave this pin floating, if not used. OUT4 16 O Level shifter channel 4 output. Leave this pin floating, if not used. OUT5 17 O Level shifter channel 5 output. Leave this pin floating, if not used. OUT6 18 O Level shifter channel 6 output. Leave this pin floating, if not used. OUT7 19 O Level shifter channel 7 output. Leave this pin floating, if not used. 4 Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TPS65192 TPS65192 www.ti.com ....................................................................................................................................................................................................... SLVS962 – JULY 2009 PIN FUNCTIONS (continued) PIN I/O DESCRIPTION NAME NO. OUT8 20 O Level shifter channel 8 output. Leave this pin floating, if not used. OUT9 21 O Level shifter channel 9 output. Leave this pin floating, if not used. DISCHARGE 22 O Panel discharge output. Leave this pin floating, if not used. GND 23 P Ground. RE 24 O Gate voltage shaping discharge resistor connection. Leave this pin floating, if not used. FLK3 25 I Gate voltage shaping flicker clock input for channels 3 and 6. Connect this pin to GND if not used. FLK2 26 I Gate voltage shaping flicker clock input for channels 2 and 5. Connect this pin to GND if not used. FLK1 27 I Gate voltage shaping flicker clock input for channels 1 and 4. Connect this pin to GND if not used. VSENSE 28 I Panel discharge voltage sense. Connect this pin to GND, if not used. Pad P Connect to VGL Exposed Thermal Die TYPICAL CHARACTERISTICS TABLE OF GRAPHS FIGURE Output Rise and Fall Time Propagation Delay Output Current Panel Discharge Channels 1 to 7, CL = 4.7 nF, rising edge Figure 1 Channels 1 to 7, CL = 4.7 nF, falling edge Figure 2 Channels 8 to 9, CL = 4.7 nF, rising edge Figure 3 Channels 8 to 9, CL = 4.7 nF, falling edge Figure 4 Channels 1 to 7, CL = 8 pF, rising edge Figure 5 Channels 1 to 7, CL = 8 pF, falling edge Figure 6 Channels 8 to 9, CL = 8 pF, rising edge Figure 7 Channels 8 to 9, CL = 8 pF, falling edge Figure 8 IN to OUT, channels 1 to 7, CL = 150 pF, rising edge Figure 9 IN to OUT, channels 1 to 7, CL = 150 pF, falling edge Figure 10 IN to OUT, channels 8 to 9, CL = 150 pF, rising edge Figure 11 IN to OUT, channels 8 to 9, CL = 150 pF, falling edge Figure 12 FLK to OUT, channels 1 to 6, CL = 150 pF, RE = 1 kΩ Figure 13 Channels 1 to 7, CL = 10 nF Figure 14 Channels 8 to 9, CL = 10 nF Figure 15 Power-on sequencing Figure 16 Power-off-sequencing Figure 17 Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TPS65192 5 TPS65192 SLVS962 – JULY 2009 ....................................................................................................................................................................................................... www.ti.com OUTPUT FALL TIME CHANNELS 1-7, COUT = 4.7 nF OUTPUT RISE TIME CHANNELS 1-7, COUT = 4.7 nF VOUT 10 V/div VOUT 10 V/div RISE TIME = 317 ns MEASURED BETWEEN 10% AND 90% OF VOUT FALL TIME = 248 ns MEASURED BETWEEN 90% AND 10% OF VOUT 200 ns/div 200 ns/div Figure 1. OUTPUT RISE TIME CHANNELS 8-9, COUT = 4.7 nF Figure 2. OUTPUT FALL TIME CHANNELS 8-9, COUT = 4.7 nF VOUT 10 V/div VOUT 10 V/div RISE TIME = 846 ns MEASURED BETWEEN 10% AND 90% OF VOUT FALL TIME = 562 ns MEASURED BETWEEN 90% AND 10% OF VOUT 500 ns/div 500 ns/div Figure 4. Figure 3. 6 Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TPS65192 TPS65192 www.ti.com ....................................................................................................................................................................................................... SLVS962 – JULY 2009 OUTPUT RISE TIME CHANNELS 1-7, COUT = 8 pF OUTPUT FALL TIME CHANNELS 1-7, COUT = 8 pF VOUT 10 V/div VOUT 10 V/div RISE TIME = 3 ns MEASURED BETWEEN 10% AND 90% OF VOUT FALL TIME = 4 ns MEASURED BETWEEN 90% AND 10% OF VOUT 5 ns/div 5 ns/div Figure 6. OUTPUT FALL TIME CHANNELS 8-9, COUT = 8 pF Figure 5. OUTPUT RISE TIME CHANNELS 8-9, COUT = 8 pF VOUT 10 V/div VOUT 10 V/div RISE TIME = 3 ns MEASURED BETWEEN 10% AND 90% OF VOUT FALL TIME = 3 ns MEASURED BETWEEN 90% AND 10% OF VOUT 5 ns/div Figure 7. 5 ns/div Figure 8. Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TPS65192 7 TPS65192 SLVS962 – JULY 2009 ....................................................................................................................................................................................................... www.ti.com OUTPUT FALL TIME CHANNELS 8-9, COUT = 8 pF PROPAGATION DELAY – FALLING IN-OUT, CHANNELS 1-7, COUT = 8 pF VOUT 10 V/div VOUT 10 V/div VIN 1 V/div FALL TIME = 3 ns MEASURED BETWEEN 90% AND 10% OF VOUT DELAY = 32 ns MEASURED BETWEEN 50% OF VIN AND 50% OF VOUT 5 ns/div Figure 9. PROPAGATION DELAY – RISING IN-OUT, CHANNELS 8-9, COUT = 8 pF 10 ns/div Figure 10. PROPAGATION DELAY – FALLING IN-OUT, CHANNELS 8-9, COUT = 8 pF VOUT 10 V/div VIN 1 V/div VIN 1 V/div VOUT 10 V/div DEALY = 19 ns MEASURED BETWEEN 50% OF VIN AND 50% OF VOUT DELAY = 28 ns MEASURED BETWEEN 50% OF VIN AND 50% OF VOUT 100 ns/div Figure 12. 10 ns/div Figure 11. 8 Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TPS65192 TPS65192 www.ti.com ....................................................................................................................................................................................................... SLVS962 – JULY 2009 PROPAGATION DELAY – FALLING FLK-OUT, CHANNELS 1-6, COUT = 158 pF DISCHARGE DURING POWER-UP VFLK 1 V/div VOUT 10 V/div VGH1 10 V/div VDISCHARGE 10 V/div DELAY = 55 ns MEASURED BETWEEN 50% OF VFLK AND 90% OF VOUT RE = 1 kΩ to GND . 50 ms/div 100 ns/div Figure 13. Figure 14. OUTPUT VOLTAGE DROP (HIGH) vs OUTPUT CURRENT 4.50 4.5 DISCHARGE DURING POWER-DOWN 4 4.00 VGH1 10 V/div Output Voltage Drop – V 3.5 3.50 VDISCHARGE 10 V/div 3.00 3 CHANNELS 8-9 2.50 2.5 2.00 2 1.50 1.5 CHANNELS 1-7 1.00 1 0.50 0.5 0 0.00 1 s/div 00 10 10 Figure 15. 20 20 30 40 50 60 70 30 40 50 60 70 Output Current – mA 80 80 90 90 100 100 Figure 16. Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TPS65192 9 TPS65192 SLVS962 – JULY 2009 ....................................................................................................................................................................................................... www.ti.com OUTPUT VOLTAGE DROP (LOW) vs OUTPUT CURRENT 2.00 2 Output Voltage Drop – V 1.75 1.75 1.5 1.50 1.25 1.25 CHANNELS 8-9 1.00 1 0.75 0.75 0.50 0.5 CHANNELS 1-7 0.25 0.25 0 0.00 00 10 10 20 20 30 40 50 60 70 30 40 50 60 70 Output Current – mA 80 80 90 90 100 100 Figure 17. DETAILED DESCRIPTION LEVEL SHIFTERS The 9 level shifter channels in the TPS65192 are divided into two groups. Channels 1 through 7 are powered from VGH1 and VGL, channels 8 and 9 are powered from VGH2 and VGL. Channels 1 to 6 support gate shaping and channels 7 through 9 do not (see the block diagram on page 1). Figure 18 contains a simplified block diagram of one channel with gate voltage shaping. VGH1 From Timing Controller INx FLKx Q1 Channel Control OUTx To LCD Panel Q2 Q3 VGL RE RE Figure 18. Level Shifter Channel With Gate Voltage Shaping On the rising edge of IN, Q1 turns on, Q2 and Q3 turn off, and OUT is driven to VGH1. On the falling edge of FLK, Q1 turns off, Q3 is turned on, and the panel now discharges through Q3 and RE (see Figure 19). On the falling edge of IN, Q2 turns on and Q3 turns off, and OUT is driven to VGL. This sequence is repeated in turn for each channel. 10 Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TPS65192 TPS65192 www.ti.com ....................................................................................................................................................................................................... SLVS962 – JULY 2009 Figure 19. Gate Voltage Shaping Timing Diagram The alternative configuration shown in Figure 20 can be used to define a minimum gate voltage reached during gate voltage shaping. VGH1 From Timing Controller INx FLKx Q1 Channel Control OUTx To LCD Panel Q2 Q3 VGL RE VGH1 RE1 RE2 Figure 20. Alternative Gate Voltage Shaping Circuit Configuration In this circuit, resistors RE1 and RE2 define both the rate of change of gate voltage decay and the minimum gate voltage VMIN. Using the Thevenin equivalent, the operating parameters of Figure 20 are easily expressed as follows: æ ö RE2 VMIN = VVG H1 ´ ç ÷ è RE1 + R E2 ø R × RE2 RE = E1 RE1 + RE2 (1) FLICKER CLOCKS The gate voltage shaping control logic in the TPS65192 allows the device to be used with one, two or three flicker clock signals, according to the application requirements. In 6-phase applications where one signal controls gate voltage shaping for six CLK channels, the flicker clock should be connected to FLK1 and the unused pins FLK2 and FLK3 connected to GND. Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TPS65192 11 TPS65192 SLVS962 – JULY 2009 ....................................................................................................................................................................................................... www.ti.com In 6-phase applications where three signals control gate voltage shaping for six CLK channels, the flicker clock for channels 1 and 4 should be connected to FLK1, the flicker clock for channels 2 and 5 connected to FLK2, and the flicker clock for channels 3 and 6 connected to FLK3. In 4-phase applications where two signals control gate voltage shaping for four CLK channels, the flicker clock for phases 1 and 3 should be connected to FLK1, the flicker clock for phases 2 and 4 connected to FLK2, and the unused pin FLK3 connected to GND. The unused pins IN 3 and IN6 should be connected to VLOGIC. Alternatively, IN3 can be connected to IN2 and IN6 connected to IN5; this arrangement can simplify PCB layout. Typical schematics for each of the above cases are included in the Applications section of this data sheet. Gate voltage shaping is started by the falling edge of the FLK signal(s), which must occur during a valid part of the clock waveform. For 6-phase systems, this means the last 60° of the clock waveform; for 4-phase systems, this means the last 90° of the clock waveform (see Figure 21 and Figure 22). Falling edges of the FLK signal(s) occurring outside the valid part of the clock waveform are ignored. The rising edge of the FLK signal(s) has no effect, regardless of when it occurs. Note that gate voltage shaping is disabled when the voltage applied to the VSENSE pin is less than VREF. IN1 IN2 IN3 IN4 IN5 IN6 Figure 21. FLK Falling Edge Validity, 6-Phase Applications IN1 IN2 IN3 IN4 IN5 IN6 Figure 22. FLK Falling Edge Validity, 4-Phase Applications 12 Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TPS65192 TPS65192 www.ti.com ....................................................................................................................................................................................................... SLVS962 – JULY 2009 LEVEL SHIFTERS WITHOUT GATE VOLTAGE SHAPING Channels 7 through 9 do not support gate voltage shaping and are controlled only by the logic level applied to their INX pin. Figure 23 contains a block diagram of a channel that does not support gate voltage shaping. VGH1 Q1 From Timing Controller Channel Control INx OUTx To LCD Panel Q2 VGL Figure 23. Block Diagram of Level Shifter Without Gate Voltage Shaping PANEL DISCHARGE The TPS65192 contains a function for discharging the display panel during power-down. The discharge function comprises a comparator and a level shifter (see Figure 24). During normal operation, the voltage applied to the VSENSE pin is greater than VREF, the output of the level shifter is low, and the DISCHARGE signal is at VGL. During power-down, when the voltage applied to the VSENSE pin falls below VREF, the level shifter output goes high and the DISCHARGE signal tracks VGH1 as it discharges (see Figure 16 and Figure 17). Note that gate voltage shaping is disabled when the voltage applied to the VSENSE pin is less than VREF. Figure 24. Panel Discharge Function Block Diagram Suitable values for resistors R1 and R2 in Figure 24 can be calculated as follows: æ V ö æ V ö R1 = R2 ´ ç X - 1÷ = R 2 ´ ç X - 1÷ è 1.5 V ø è VREF ø (2) Where Vx is the voltage used to activate/deactivate the discharge function. For most applications, a value between 1kΩ and 10kΩ for R2 can be used (R1 depends on the value of R2 and the value of Vx). Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TPS65192 13 TPS65192 SLVS962 – JULY 2009 ....................................................................................................................................................................................................... www.ti.com APPLICATION INFORMATION Power Supply Decoupling For proper performance, it is recommended that each power supply rail be decoupled with high quality ceramic decoupling capacitors placed as close to the IC supply pins as possible. The exact values used should be optimized for each application, but a parallel combination of 10µF and 100nF is a good place to start. PCB LAYOUT The output stages of the TPS65192 are capable of sinking and sourcing high peak currents – greater than 500mA in typical applications – and care must be taken during PCB layout to ensure that this performance can be achieved in practice. In particular, the high rates of change of current occurring at the rising and falling edges of each output require stray inductance to be minimized. This is most easily achieved by routing the output signals using short, wide PCB tracks (as far as this is possible) and using a low impedance ground plane on the other side of the board to conduct return currents. Tracks between the decoupling capacitors and the corresponding power supply pins should also be kept short and wide as possible. PCB layout must also be adequate from a thermal as well as electrical point of view. The TPS65192 is supplied in a 28-pin QFN package designed to eliminate the need for heat sinks to dissipate the power generated in the IC. The package, shown in Figure 25, is designed so that the lead-frame die pad is exposed on the bottom of the IC, thereby providing an extremely low thermal resistance path between the die and the exterior of the package (RθJC). Figure 25. Section View of a QFN Package Copper areas in and on a PCB act as heat sinks for the QFN device; however, signal routing typically restricts access to the power pad on the top layer of the PCB. In typical applications, therefore, the main copper area used to conduct heat away from the IC is on the bottom layer. TI recommends placing thermal vias in the solder mask defined thermal pad to transfer heat from the top layer of the PCB to the inner or bottom layer used for heat sinking. The recommended via diameter is 0.3mm or less, and via spacing 1mm (see Figure 26). For the 5 × 5 mm QFN package used for the TPS65192, five thermal vias are typically used. 14 Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TPS65192 TPS65192 www.ti.com ....................................................................................................................................................................................................... SLVS962 – JULY 2009 Figure 26. Recommended Thermal Via Spacing The thermal vias should make their connection to the bottom (or internal) copper plane with a complete connection around the entire circumference of the plated through hole, and a ring of exposed copper (0.05mm wide) around the vias at the bottom of the copper plane. It is not recommended to cover the vias with solder mask as this can cause excessive voiding, and nor is it recommended to use a thermal relief web or spoke connection as this impedes the conduction path to the other layers (see Figure 27). Figure 27. Thermal Via Connection at the Bottom Layer In any design, the copper areas used as heat sinks should be made as large as possible. The power pad of the TPS65192 is electrically connected to VGL and therefore must not be connected to the PCB’s ground plane. For more detailed information concerning the thermal performance of QFN packages and recommendations about how to mount the ICs on a PCB, refer to the following application reports: SLOA122 QFN Layout Guidelines SLUA271A QFN/SON PCB Attachment Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TPS65192 15 TPS65192 SLVS962 – JULY 2009 ....................................................................................................................................................................................................... www.ti.com APPLICATION CIRCUITS +27V +27V 10 µF 10 µF 100 nF 100 nF VGH1 VGH2 From T-CON CLK1 IN1 CLK2 OUT1 CLK1 IN2 OUT2 CLK2 CLK3 IN3 OUT3 CLK3 CLK4 IN4 OUT4 CLK4 CLK5 IN5 OUT5 CLK5 CLK6 IN6 OUT6 CLK6 START IN7 OUT7 START ODD IN8 OUT8 ODD IN9 OUT9 EVEN EVEN FLK To Panel FLK1 FLK2 FLK3 100 kΩ VIN VSENSE 20 kΩ DISCHARGE DISCHARGE RE GND VGL 1 kΩ 100 nF 10 µF -7 V Figure 28. Typical 6-Phase HD TV Application with One Flicker Clock 16 Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TPS65192 TPS65192 www.ti.com ....................................................................................................................................................................................................... SLVS962 – JULY 2009 +27 V +27 V 10 µF 10 µF 100 nF 100 nF VGH1 VGH2 From T-CON CLK1 IN1 OUT1 CLK1 CLK2 IN2 OUT2 CLK2 CLK3 IN3 OUT3 CLK3 CLK4 IN4 OUT4 CLK4 CLK5 IN5 OUT5 CLK5 CLK6 IN6 OUT6 CLK6 START IN7 OUT7 START ODD IN8 OUT8 ODD EVEN IN9 OUT9 EVEN FLK1 FLK1 FLK2 FLK2 FLK3 To Panel FLK3 100 kΩ VIN VSENSE 20 kΩ DISCHARGE DISCHARGE RE GND VGL 1 kΩ 100 nF 10 µF -7V Figure 29. Typical 6-Phase F-HD TV Application with Three Flicker Clocks Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TPS65192 17 TPS65192 SLVS962 – JULY 2009 ....................................................................................................................................................................................................... www.ti.com +27 V +27 V 10 µF 10 µF 100 nF 100 nF VGH1 VGH2 CLK1 IN1 OUT1 CLK1 CLK2 IN2 OUT2 CLK2 VLOGIC IN3 OUT3 CLK3 IN4 OUT4 CLK3 CLK4 IN5 OUT5 CLK4 IN6 OUT6 IN7 OUT7 START ODD IN8 OUT8 ODD EVEN IN9 OUT9 EVEN FLK1 FLK1 FLK2 FLK2 From T-CON START To Panel FLK3 100 kΩ VIN VSENSE 20 kΩ DISCHARGE DISCHARGE RE GND VGL 1 kΩ 100 nF 10 µF -7 V Figure 30. Typical 4-Phase Monitor Application with Two Flicker Clocks 18 Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): TPS65192 PACKAGE OPTION ADDENDUM www.ti.com 10-Dec-2020 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan (2) Lead finish/ Ball material MSL Peak Temp Op Temp (°C) Device Marking (3) (4/5) (6) TPS65192RHDR ACTIVE VQFN RHD 28 3000 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 85 TPS 65192 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may reference these types of products as "Pb-Free". RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption. Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of
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