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TPS65170RHDR

TPS65170RHDR

  • 厂商:

    BURR-BROWN(德州仪器)

  • 封装:

    VQFN-28_5X5MM-EP

  • 描述:

    IC BIAS PWR SUP FOR LCD 28VQFN

  • 数据手册
  • 价格&库存
TPS65170RHDR 数据手册
TPS65170 www.ti.com SLVSA27 – OCTOBER 2009 LCD Bias Supply Check for Samples :TPS65170 FEATURES 1 • • • • • • • • • • • • • 8.6V to 14.7V Input Voltage Range 2.8A Boost Converter Switch Current Limit Boost Converter Output Voltages up to 18.5V Boost and Buck Converter Short-Circuit Protection 1.5A Buck Converter Switch Current Limit Fixed 750kHz Switching Frequency for Buck and Boost Converters Fixed Buck Converter Soft-Start Programmable Boost Converter Soft-Start Two Charge Pump Controllers to Regulate VGH and VGL Control Signal for External High-Side MOSFET Isolation Switch Reset Signal With Programmable Reset Pulse Duration Thermal Shutdown 28-Pin 5×5 mm QFN Package APPLICATIONS • LCD TVs and Monitors DESCRIPTION The TPS65170 also provides a reset circuit that monitors the buck converter output (VLOGIC) and generates a reset signal for the timing controller during power-up. A control signal can also be generated to control an external MOSFET isolation switch located between the output of the boost converter and the display panel. Isolation Switch Control Boost Converter Buck Converter Positive LDO Controller Negative LDO Controller Reset Generator The TPS65170 provides a simple and economic power supply solution for a wide variety of LCD bias applications. In typical display panel applications, the boost converter generates the display panel’s source voltage VS, the buck converter generates the system’s logic supply VLOGIC, and the two charge pump controllers regulate the external charge pumps generating the display transistors’ on and off supplies VGH and VGL. By using external transistors to regulate the charge pump output voltage, power dissipation in the IC is significantly reduced, simplifying PCB thermal design and improving reliability. 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2009, Texas Instruments Incorporated TPS65170 SLVSA27 – OCTOBER 2009 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. ORDERING INFORMATION (1) (1) TA ORDERING PACKAGE –40°C to 85°C TPS65170RHDR 28-Pin 5x5 QFN The device is supplied taped and reeled, with 3000 devices per reel. ABSOLUTE MAXIMUM RATINGS over operating free-air temperature range (unless otherwise noted) (1) VALUE UNIT Input voltage (2) VIN -0.3 to 20 V Input voltage (2) FBN, FBP, FBB, FB, DLY, CRST, SS, COMP, VL -0.3 to 7 V RST -0.3 to 7 V SWB, CTRLP, GD, SW, CTRLN -0.3 to 20 V 1 mA Human Body Model 2000 V Machine Model 200 V Charged Device Model 700 V See Dissipation Table W Operating ambient temperature range –40 to 85 °C Operating junction temperature range –40 to 150 °C Storage temperature range –65 to 150 °C Output voltage (2) Output current ESD rating GD Continuous Power Dissipation (1) (2) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. With respect to the GND and AGND pins. DISSIPATION RATINGS PACKAGE θJA TA ≤ 25°C POWER RATING TA = 70°C POWER RATING TA = 85°C POWER RATING 28-Pin QFN 34 °C/W 2.94 W 1.62 W 1.32 W RECOMMENDED OPERATING CONDITIONS over operating free-air temperature range (unless otherwise noted) MIN TYP MAX UNIT V VIN Input voltage range VS Boost converter output voltage range LBOOST Boost converter inductance CBOOST LBUCK CBUCK Buck converter output capacitance TA Operating ambient temperature TJ Operating junction temperature –40 2 8.6 12 14.7 VIN+1 15 18.5 6.8 10 15 Boost converter output capacitance 50 60 100 µF Buck converter inductance 6.8 10 15 µH 20 44 100 µF –40 25 85 °C 85 125 °C Submit Documentation Feedback V µH Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s) :TPS65170 TPS65170 www.ti.com SLVSA27 – OCTOBER 2009 ELECTRICAL CHARACTERISTICS VIN = 12V; VS = 17V; VLOGIC = 3.3V; TA = –40°C to 85°C; typical values are at 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT 1 10 mA 7.8 8.2 8.5 V 600 750 900 kHz 18.5 V 1% V ±0.01 ±1 µA 3.5 4.2 A 10 µA POWER SUPPLY IIN Supply current VFB, VFBB, VFBP = 1.3V, VFBN = –50mV UVLO UVLO threshold VIN rising INTERNAL OSCILLATOR fSW Switching frequency BOOST CONVERTER VS Output voltage VFB Feedback regulation voltage Measured after isolation switch IFB Feedback input bias current ILIM Switch current limit Ilkg Switch leakage current VSW = 12V rDS(on) Switch ON resistance ISW = ILIM tSW Switching time Turn-on and turn-off Line regulation 9.6V < VIN < 14.4V, IS = 750mA Load regulation VS = 17V, IS = 100mA to 1.5A VOVP Overvoltage threshold VFB rising ISS Soft start current VSS = 1.24V VFB(SC) Short circuit threshold VFB rising 13 –1% VFB = 1.24V 2.8 1.24 0.12 0.22 10 Ω ns 0.02 %/V 0.1 %/A VFB +3% VFB +5% V 10 µA 200 mV BUCK CONVERTER VLOGIC Output voltage IFBB Feedback input bias current –3% 3.3 ILIM Switch current limit Ilkg Switch leakage current rDS(on) Switch ON resistance tSW Switching time Turn-on and turn-off Line regulation VIN = 9.6V to 14.4V, ILOGIC = 0.5A 0.01 %/V Load regulation ILOGIC = 150mA to 1.5A 0.2 %/A VPG Power good threshold VLOGIC rising 3.2 V VFBB(SC) Short circuit threshold VFBB rising tSS Soft start time VFBB = 3.3V 1.5 2.1 VSWB = GND 0.21 3% V ±125 µA 2.8 A 10 µA 0.35 10 Ω ns 1.065 V 0.66 ms POSITIVE CHARGE PUMP CONTROLLER VFBP Feedback regulation voltage ICTRLP = 1mA (sinking) IFBP Feedback input bias current VFBP = 1.24V ICTRLP Base drive current for external transistor Normal operation (sinking) Line regulation VIN = 9.6V to 14.4V, VGH = 27V, IGH = 50mA, including external components Load regulation VGH = 27V, IGH = 10mA to 50mA, including external components Short-circuit operation (sinking) -3% 1.24 +3% V ±1 ±100 nA 55 75 5 40 mA µA ±0.1 %/V ±1 %/A NEGATIVE CHARGE PUMP CONTROLLER VFBN Feedback regulation voltage ICTRLN = 1mA (sourcing) IFBN Feedback input bias current VFBN = 0V –36 ICTRLN Base drive current for external transistor Normal operation (sourcing) 2.5 Short-circuit operation (sourcing) 200 Line regulation VIN = 9.6V to 14.4V, VGL = -7V, IGL = 50mA, including external components 0 36 mV ±1 ±100 nA 300 480 mA ±0.1 Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s) :TPS65170 µA %/V 3 TPS65170 SLVSA27 – OCTOBER 2009 www.ti.com ELECTRICAL CHARACTERISTICS (continued) VIN = 12V; VS = 17V; VLOGIC = 3.3V; TA = –40°C to 85°C; typical values are at 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS Load regulation MIN VGL = –7V, IGH = 10mA to 50mA, including external components TYP MAX ±1 UNIT %/A RESET GENERATOR VRST Output voltage low IRST 1mA (sinking) IRST Output current high VRST = 3.3V (sinking) ICRST Reset delay capacitor charge current VCRST = 1.24V VCRST Reset delay threshold voltage VCRST rising 0.5 V 1 µA 10 µA 1.24 V ISOLATION SWITCH CONTROL VGD Output voltage low IGD = 500µA (sinking) ILKG Leakage Current VGD = 20V IDLY Delay capacitor charge current VDLY = 1.24V VDLY Delay threshold voltage VDLY rising 0.05 0.5 V 1 µA DELAY DLY 10 µA 1.24 V THERMAL SHUTDOWN TSD Thermal shutdown threshold 150 °C THYS Thermal shutdown hysteresis 10 °C DEVICE INFORMATION PIN ASSIGNMENT 4 VIN VIN PGND PGND SW SW GD 28 27 26 25 24 23 22 Top View VL 1 21 CTRLP SWB 2 20 FBP SWB 3 19 FB Exposed Thermal Die 16 CRST RST 7 15 DLY AGND 14 18 COMP NC 13 NC 12 6 NC 11 FBB NC 10 17 SS 9 5 NC FBN 8 4 AGND CTRLN Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s) :TPS65170 TPS65170 www.ti.com SLVSA27 – OCTOBER 2009 PIN FUNCTIONS PIN NAME VL NO. I/O DESCRIPTION 1 O Connection for decoupling capacitor for internal bias supply. 2, 3 O Buck converter switch node CTRLN 4 O Base drive signal for the positive charge pump external regulating transistor. FBN 5 I Feedback pin for the negative charge pump. Connect this pin to the center of a resistor divider connected between the negative charge pump output and buck converter output. FBB 6 I Buck converter feedback. Connect this pin to the output of the buck converter. /RST 7 O Reset generator open drain output AGND 8 P Analog ground 9, 10, 11, 12, 13 N/A AGND 14 P Analog ground. DLY 15 I Positive charge pump and boost converter delay capacitor connection. CRST 16 I Reset generator timing capacitor connection. SS 17 I Soft-start timing capacitor connection. COMP 18 I Boost converter compensation network connection. FB 19 I Boost regulator feedback. Connect this pin to the center of a resistor divider connected between the boost converter output and AGND. FBP 20 I Feedback pin for the positive charge pump. Connect this pin to the center of a resistor divider connected between the positive charge pump output and AGND. CTRLP 21 O Base drive signal for the positive charge pump external regulating transistor GD 22 O Gate drive signal for the external MOSFET isolation switch. SW 23, 24 O Boost converter switching node PGND 25, 26 P Power ground VIN 27, 28 P Supply voltage connection P Connect to the system GND SWB NC Exposed Thermal Die Not used, connect to AGND. Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s) :TPS65170 5 TPS65170 SLVSA27 – OCTOBER 2009 www.ti.com TYPICAL CHARACTERISTICS TABLE OF GRAPHS FIGURE NO. BOOST CONVERTER Efficiency VIN = 12 V, VS = 15.5V Figure 1 Load Transient Response VIN = 12 V, VS = 15.5V, IS = 250 mA to 750 mA Figure 2 Line Transient Response VIN = 11.5 V to 12.5 V, VS = 15.5 V, IS = 750 mA, VGH = 26V, IGH = 50 mA Figure 3 Output Voltage Ripple VIN = 12 V, VS = 15.5 V, IS = 500 mA, VGH = 26V, IGH = 50 mA Figure 4 CCM Operation, VIN = 12 V, IS = 250 mA Figure 5 DCM Operation, VIN = 12 V, IS = 50 mA Figure 6 Efficiency VIN = 12 V, VLOGIC = 3.3V Figure 7 Load Transient Response VIN = 12 V, VGL = -7V, IGL = 50mA, ILOGIC = 250 mA to 500 mA Figure 8 Line Transient Response VIN = 11.5 V to 12.5 V, VGL = -7V, IGL = 50mA, ILOGIC = 500 mA Figure 9 Output Voltage Ripple VIN = 12 V, VGL = -7V, IGL = 50mA, ILOGIC = 500 mA Figure 10 CCM Operation, VIN = 12 V, ILOGIC = 250 mA Figure 11 DCM Operation, VIN = 12 V, ILOGIC = 50 mA Figure 12 Skip Mode, VIN = 12 V, ILOGIC = 0 mA Figure 13 Load Transient Response VIN = 12 V, VGH = 26 V, VS = 15.5V, IS = 250 mA, IGH = 10 mA to 50 mA Figure 14 Line Transient Response VIN = 11.5 V to 12.5 V, VGH = 26 V, IGH = 50 mA, VS = 15.5V, IS = 750 mA, Figure 15 Output Voltage Ripple VIN = 12 V, VGH = 26 V, IGH = 50 mA, VS = 15.5V, IS = 750 mA, Figure 16 Load Transient Response VIN = 12 V, VGL = -7 V, ILOGIC = 250 mA, IGL = 10 mA to 50 mA Figure 17 Line Transient Response VIN = 11.5 V to 12.5 V, VGL = -7 V, IGL = 50 mA, ILOGIC = 250 mA Figure 18 Output Voltage Ripple VIN = 12 V, VGL = -7 V, ILOGIC = 250 mA, IGL = 50 mA Figure 19 Switch Node (SW) Waveform BUCK CONVERTER Switch Node (SW) Waveform POSITIVE CHARGE PUMP NEGATIVE CHARGE PUMP START-UP SEQUENCING Power-Up Sequencing Figure 20 Reset Operation Figure 21 BOOST CONVERTER LOAD TRANSIENT RESPONSE IS = 250 mA to 750 mA BOOST CONVERTER EFFICIENCY vs OUTPUT CURRENT 100 90 VIN = 12 V VS = 15.5 V 80 Efficiency - % 70 VS 60 50 40 30 IS 20 VIN = 12 V, VS = 15.5 V 10 0 0 0.25 0.5 0.75 1 IO - Output Current - A 1.25 1.5 Figure 1. 6 Figure 2. Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s) :TPS65170 TPS65170 www.ti.com SLVSA27 – OCTOBER 2009 BOOST CONVERTER LINE TRANSIENT RESPONSE VIN = 11.5 V to 12.5 V BOOST CONVERTER OUTPUT VOLTAGE RIPPLE IS = 500 mA VIN = 12 V, VS = 15.5 V, VGH = 26 V, IGH = 50 mA VS = 15.5 V, IS = 750 mA, VGH = 26 V, IGH = 50 mA VS VS VIN Figure 3. Figure 4. BOOST CONVERTER SWITCH NODE WAVEFORM CONTINUOUS CONDUCTION MODE BOOST CONVERTER SWITCH NODE WAVEFORM DISCONTINUOUS CONDUCTION MODE VSW VSW IINDUCTOR IINDUCTOR VIN = 12 V, Is = 50 mA VIN = 12 V, IS = 250 mA Figure 5. Figure 6. BUCK CONVERTER LOAD TRANSIENT RESPONSE ILOGIC = 250 mA to 500 mA BUCK CONVERTER EFFICIENCY vs OUTPUT CURRENT 100 VIN = 12 V, VLOGIC = 3.3 V 90 VIN = 12 V, VGH = -7 V, IGH = 50 mA 80 Efficiency - % 70 VLOGIC 60 50 ILOGIC 40 30 20 10 0 0 0.25 0.5 0.75 1 IO - Output Current - A 1.25 1.5 Figure 7. Figure 8. Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s) :TPS65170 7 TPS65170 SLVSA27 – OCTOBER 2009 www.ti.com BUCK CONVERTER LINE TRANSIENT RESPONSE VIN = 11.5 V to 12.5 V BUCK CONVERTER OUTPUT VOLTAGE RIPPLE ILOGIC = 500 mA VIN = 12 V, VGH = -7 V, IGH = 50 mA Ilogic = 500 mA, VGH = -7 V, IGH = 50 mA VLOGIC VLOGIC ILOGIC Figure 9. Figure 10. BUCK CONVERTER SWITCH NODE WAVEFORM CONTINUOUS CONDUCTION MODE BUCK CONVERTER SWITCH NODE WAVEFORM DISCONTINUOUS CONDUCTION MODE VSWB VSWB IINDUCTOR IINDUCTOR VIN = 12 V, ILOGIC = 250 mA VIN = 12 V, ILOGIC = 50 mA Figure 11. Figure 12. BUCK CONVERTER SWITCH WAVEFORM SKIP MODE POSITIVE CHARGE PUMP LOAD TRANSIENT RESPONSE IGH = 10 mA to 50 mA VGH VSWB VIN = 12 V, VGH = 26 V, VS = 15.5 V, IS = 250 mA IGH IINDUCTOR VIN = 12 V, ILOGIC = 0 mA Figure 13. 8 Figure 14. Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s) :TPS65170 TPS65170 www.ti.com SLVSA27 – OCTOBER 2009 POSITIVE CHARGE PUMP LINE TRANSIENT RESPONSE VIN = 11.5 V to 12.5 V POSITIVE CHARGE PUMP OUTPUT VOLTAGE RIPPLE IGH = 50 mA VGH = 26 V, IGH = 50 mA, VS = 15.5 V, IS = 750 mA VGH VGH IGH VIN = 12 V, VGH = 26 V, VS = 15.5 V, IS = 750 mA Figure 15. Figure 16. NEGATIVE CHARGE PUMP LOAD TRANSIENT RESPONSE IGL = 10 mA to 50 mA NEGATIVE CHARGE PUMP LINE TRANSIENT RESPONSE VIN = 11.5 V to 12.5 V VIN = 12 V, VGH = -7 V, ILOGIC = 250 mA VGL = -7 V, IGL = 50 mA, ILOGIC = 250 mA VGL VGL IGL IGL Figure 17. Figure 18. NEGATIVE CHARGE PUMP OUTPUT VOLTAGE RIPPLE IGL = 50mA POWER-UP SEQUENCING VLOGIC VIN = 12 V, VGL = -7 V, ILOGIC = 250 mA VGL VGL VS VGH Figure 19. Figure 20. Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s) :TPS65170 9 TPS65170 SLVSA27 – OCTOBER 2009 www.ti.com RESET SEQUENCING VLOGIC VGL RESET Figure 21. 10 Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s) :TPS65170 TPS65170 www.ti.com SLVSA27 – OCTOBER 2009 DETAILED DESCRIPTION Figure 22. Internal Block Diagram BOOST CONVERTER The non-synchronous boost converter uses a current mode topology and operates at a fixed frequency of 750kHz. The internal block diagram of the boost converter is shown in Figure 23 and a typical application circuit in Figure 24. External compensation allows designers to optimize performance for individual applications, and is easily implemented by connecting a suitable capacitor/resistor network between the COMP pin and AGND (see the BOOST CONVERTER DESIGN PROCEDURE section for more details). The boost converter also controls a GD pin that can be used to drive an external isolation MOSFET. The boost converter can operate in either continuous conduction mode (CCM) or discontinuous conduction mode (DCM), depending on the load current. At medium and high load currents, the inductor current is always greater Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s) :TPS65170 11 TPS65170 SLVSA27 – OCTOBER 2009 www.ti.com than zero and the converter operates in CCM; at low load currents, the inductor current is zero during part of each switching cycle, and the converter operates in DCM. The switch node waveforms for CCM and DCM operation are shown in Figure 5 and Figure 6. Note that the ringing seen during DCM operation occurs because of parasitic capacitance in the PCB layout and is quite normal for DCM operation. There is little energy contained in the ringing waveform and it does not significantly affect EMI performance. Equation 1 can be used to calculate the load current below which the boost converter operates in DCM . IDCM = (VS - VI N ) 2 ´ L ´ ¦ SW ´ VIN VO UT (1) Figure 23. Boost Converter Internal Block Diagram 12 Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s) :TPS65170 TPS65170 www.ti.com SLVSA27 – OCTOBER 2009 VS VIN CIN COUTB COUTA R1 SW GD FB R2 SS COMP CSS CCOMP RCOMP Figure 24. Boost Converter Typical Application Circuit PROTECTION (BOOST CONVERTER) The boost converter is protected against potentially damaging conditions such as overvoltage and short circuits. An error condition is detected if the voltage on the converter's FB pin remains below 200mV for longer than 1.36ms, in which case, the converter stops switching and is latched in the OFF condition. To resume normal operation, the TPS65170 must be turned off and then turned on again. Note: since the positive charge pump is driven from its switch node, an error condition on the boost converter's output will also cause the loss of VGH until the circuit recovers. The boost converter also stops switching while the positive charge pump is in a short circuit condition. This condition is not latched, however, and the boost converter automatically resumes normal operation once the short circuit condition has been removed from the positive charge pump. BOOST CONVERTER DESIGN PROCEDURE Calculate Converter Duty Cycle (Boost Converter) The simplest way to calculate the boost converter's duty cycle is to use the efficiency curve in Figure 1 to determine the converter's efficiency under the anticipated load conditions and insert this value into Equation 2 (1). Alternatively, a worst-case value (e.g., 90%) can be used for efficiency. V ´ η D = 1 - IN VS (2) A. Valid only when boost converter operates in CCM. Where VS is the output voltage of the boost converter. Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s) :TPS65170 13 TPS65170 SLVSA27 – OCTOBER 2009 www.ti.com Calculate Maximum Output Current (Boost Converter) The maximum output current IS that the boost converter can supply can be calculated using Equation 3. The minimum specified output current occurs at the maximum duty cycle (which occurs at minimum VIN) and minimum frequency (600kHz). æ VIN ´ D ö IS = ç ILIM ÷ ´ (1 - D ) 2 ´ ¦SW ´ L ø è (3) Where ILIM is the minimum specified switch current limit (2.8A) and ƒSW is the converter switching frequency. Calculate Peak Switch Current (Boost Converter) Equation 4 can be used to calculate the peak switch current occurring in a given application. The worst-case (maximum) peak current occurs at the minimum input voltage and maximum duty cycle. IS VIN ´ D ISW(PK) = + 1 - D 2 ´ ¦ SW ´ L (4) Inductor Selection (Boost Converter) The boost converter is designed for use with inductors in the range 6.8µH to 15µH. A 10µH inductor is typical. Inductors should be capable of supporting at least 125% of the peak current calculated by Equation 4 without saturating. This ensures sufficient margin to tolerate heavy load transients. Alternatively, a more conservative approach can be used in which an inductor is selected whose saturation current is greater than the maximum switch current limit (4.2A). Another important parameter is DC resistance, which can significantly affect the overall converter efficiency. Physically larger inductors tend to have lower DC resistance (DCR) because they can use thicker wire. The type and core material of the inductor can also affect efficiency, sometimes by as much as 10%. Table 1 shows some suitable inductors. Table 1. Boost Converter Inductor Selection PART NUMBER INDUCTOR VALUE COMPONENT SUPPLIER SIZE (L×W×H mm) ISAT / DCR CDRH8D43 10 µH Sumida 8.3 × 8.3 × 4.5 4A / 29 mΩ CDRH8D38 10 µH Sumida 8.3 × 8.3 × 4 3A / 38 mΩ MSS 1048-103 10 µH Coilcraft 10.5 × 10.5 × 5.1 4.8A / 26 mΩ 744066100 10 µH Wuerth 10 × 10 × 3.8 4A / 28 mΩ Rectifier Diode Selection (Boost Converter) For highest efficiency, the rectifier diode should be a Schottky type. Its reverse voltage rating should be higher than the maximum output voltage VS. The average rectified forward current through the diode is the same as the output current. ID(AVG) = IS (5) A Shottky diode with 2A average rectified current rating is adequate for most applications. Smaller diodes can be used in applications with lower output current, however, the diode must be able to handle the power dissipated in it, which can be calculated using Equation 6. Table 2 lists some diodes suitable for use in typical applications. PD = ID(AVG) ´ VF (6) Table 2. Boost Converter Rectifier Diode Selection 14 PART NUMBER VR / IAVG VF RθJA SIZE COMPONENT SUPPLIER MBRS320 20V / 3A 0.44V at 3A 46°C/W SMC International Rectifier SL22 20V / 2A 0.44V at 2A 75°C/W SMB Vishay Semiconductor SS22 20V / 2A 0.50V at 2A 75°C/W SMB Fairchild Semiconductor Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s) :TPS65170 TPS65170 www.ti.com SLVSA27 – OCTOBER 2009 Output Capacitance Selection (Boost Converter) For best performance, a total output capacitance (COUTA+COUTB in Figure 24) in the range 50µF to 100µF is recommended. At least 20µF of the total output capacitance should be connected directly to the cathode of the boost converter's rectifier diode, i.e., in front of the isolation switch. Operating the boost converter with little or no capacitance in front of the isolation switch may cause overvoltage conditions that reduce reliability of the TPS65170. Table 3 suggests some output capacitors suitable for use with the boost converter. Table 3. Boost Converter Output Capacitor Selection PART NUMBER VALUE / VOLTAGE RATING COMPONENT SUPPLIER GRM32ER61E226KE15 22 µF / 25V Murata GRM31CR61E106KA12 10 µF / 25V Murata UMK325BJ106MM 10 µF / 50V Taiyo Yuden Setting the Output Voltage (Boost Converter) The boost converter's output voltage is programmed by a resistor divider according to Equation 7. æ R ö VS = VREF ´ ç 1+ 1 ÷ è R2 ø (7) Where VREF is the IC's internal 1.24V reference. A current of the order of 100µA through the resistor network ensures good accuracy and improves noise immunity. A good approach is to assume a value of about 12k for the lower resistor (R2) and then select the upper resistor (R1) to set the desired output voltage. Compensation (Boost Converter) The boost converter's external compensation can be fine-tuned for each individual application. Recommended starting values are 33kΩ and 1nF, which introduce a pole at the origin for high DC gain and a zero for good transient response. The frequency of the zero set by the compensation components can be calculated using Equation 8. 1 ¦z = 2 ´ p ´ RCOMP ´ C COMP (8) Selecting the Soft-Start Capacitor (Boost Converter) The boost converter features a programmable soft-start function that ramps up the output voltage to limit the inrush current drawn from the supply voltage. The soft-start duration is set by the capacitor connected between the SS pin and AGND according to Equation 9. C ´ VREF tSS = SS ISS (9) Where CSS is the capacitor connected between the SS pin and GND, VREF is the IC's internal 1.24V reference, and ISS is the internally generated 10µA soft-start current. Selecting the Isolation Switch Gate Drive Components The isolation switch is controlled by an active-low signal generated by the GD pin. Because this signal is open-drain, an external pull-up resistor is required to turn the MOSFET switch off. If the MOSFET's maximum gate-source voltage rating is less than the maximum VIN, two resistors in series can be used to reduce the maximum VGS applied to the device. The exact value of the gate drive resistors is not critical: 100k for both is a good value to start with. Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s) :TPS65170 15 TPS65170 SLVSA27 – OCTOBER 2009 www.ti.com A capacitor can also be connected in parallel with the top resistor, as illustrated in Figure 24. The effect of this capacitor is to slow down the speed with which the transistor turns on, thereby limiting inrush current. (Note that the capacitor also slows down the speed with which the transistor turns off, and therefore the speed with which it can respond to error conditions.) Even when trying to limit inrush current, the capacitor must not be too large or the output voltage will rise so slowly the condition will be interpreted as an error (see Power Supply Sequencing in Detail later in this data sheet). Typical values are 10nF to 100nF, depending on the transistor used for the isolation switch and the value of the gate-drive resistors. Note that even in applications that do not use an isolation switch, an external pull-up resistor (typically 100kΩ) connected between the GD and VIN is required. BUCK CONVERTER The buck converter is a non-synchronous type that runs at a fixed frequency of 750kHz. The converter features integrated soft-start (0.66ms), bootstrap, and compensation circuits to minimize external component count. The buck converter's internal block diagram is shown in Figure 25 and a typical application circuit in Figure 26. The output voltage of the buck converter is internally programmed to 3.3V and is enabled as soon as VIN exceeds the UVLO threshold. For best performance, the buck converter's FB pin should be connected directly to the positive terminal of the output capacitor(s). The buck converter can operate in either continuous conduction mode (CCM) or discontinuous conduction mode (DCM), depending on the load current. At medium and high load currents, the inductor current is always greater than zero and the converter operates in CCM; at low load currents, the inductor current is zero during part of each switching cycle, and the converter operates in DCM. The switch node waveforms for CCM and DCM operation are shown in Figure 11 and Figure 12. Note that the ringing seen during DCM operation occurs because of parasitic capacitance in the PCB layout and is quite normal for DCM operation. However, there is very little energy contained in the ringing waveform and it does not significantly affect EMI performance. Equation 10 can be used to calculate the load current below which the buck converter operates in DCM (VIN - VLOGIC ) VLOGIC IDCM = ´ 2 ´ L ´ ¦ SW VIN (10) The buck converter uses a skip mode to regulate VLOGIC at very low load currents. This mode allows the converter to maintain its output at the required voltage while still meeting the requirement of a minimum on time. The buck converter enters skip mode when its feedback voltage exceeds the skip mode threshold (1% above the normal regulation voltage). During skip mode, the buck converter switches for a few cycles, then stops switching for a few cycles, and then starts switching again and so on, for as long as the feedback voltage is above the skip mode threshold. Output voltage ripple can be a little higher during skip mode (see Figure 13). 16 Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s) :TPS65170 TPS65170 www.ti.com SLVSA27 – OCTOBER 2009 Figure 25. Buck Converter Internal Block Diagram Figure 26. Buck Converter Application Circuit PROTECTION (BUCK CONVERTER) To protect against short circuit conditions, the buck converter automatically limits its output current when the voltage applied to its FBB pin is less than 400mV. Normal operation is resumed as soon as the feedback voltage exceeds 400mV. Note: since the negative charge pump is driven from its switch node, a short circuit condition on the buck converter's output will also cause the loss of VGL until the short circuit is removed. Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s) :TPS65170 17 TPS65170 SLVSA27 – OCTOBER 2009 www.ti.com An internal pull-up prevents the buck converter from generating excessive output voltages if its FBB pin is left floating. Buck Converter Design Procedure Because the negative charge pump is driven from the buck converter's switch node, the effective output current for design purposes is greater than ILOGIC alone. For best performance, the effective current calculated using Equation 11 should be used during the design. ILOGIC(EFFECTIVE) = ILOGIC + VGL ´ IGL VLOGIC (11) Calculate Converter Duty Cycle (Buck Converter) The best way to calculate the converter's duty cycle is to use the efficiency curve in Figure 7 to determine the converter's efficiency under the anticipated load conditions and insert this value into Equation 12 (1). Alternatively, a worst-case value (e.g., 80%) can be used for efficiency. V D = LOGIC VIN ´ η (12) (1) Valid only when buck converter perates in CCM. Calculate Maximum Output Current (Buck Converter) The maximum output current that the buck converter can supply can be calculated using Equation 13. The minimum specified output current occurs at the minimum duty cycle (which occurs at maximum VIN) and maximum frequency (900kHz). VIN ´ (1 - D) ´ D ILOGIC(EFFECTIVE) = ISW(LIM) 2 ´ ¦SW ´ L (13) Where ISW(LIM) is the minimum specified switch current limit (1.5A) and ƒSW is the converter switching frequency. Calculate Peak Switch Current (Buck Converter) Equation 14 can be used to calculate the peak switch current occurring in a given application. The worst-case (maximum) peak current occurs at maximum VIN. VIN ´ (1 - D) ´ D ISW(PK) = ILOGIC(EFFECTIVE) + 2 ´ ¦SW ´ L (14) Inductor Selection (Buck Converter) The buck converter is designed for use with inductors in the range 6.8µH to 15µH, and is optimized for 10µH. The inductor must be capable of supporting the peak current calculated by Equation 14 without saturating. Alternatively, a more conservative approach can be used in which an inductor is selected whose saturation current is greater than the maximum switch current limit (2.25A). Another important parameter is DC resistance, which can significantly affect the overall converter efficiency. Physically larger inductors tend to have lower DC resistance (DCR) because they can use thicker wire. The type and core material of the inductor can also affect efficiency, sometimes by as much as 10%. Table 4 shows some suitable inductors. Table 4. Buck Converter Inductor Selection 18 PART NUMBER INDUCTOR VALUE COMPONENT SUPPLIER SIZE (L×W×H mm) ISAT / DCR CDRH8D43 10 µH Sumida 8.3 × 8.3 × 4.5 4A / 29 mΩ CDRH8D38 10 µH Sumida 8.3 × 8.3 × 4 3A / 38 mΩ MSS 1048-103 10 µH Coilcraft 10.5 × 10.5 × 5.1 4.8A / 26 mΩ 744066100 10 µH Wuerth 10 × 10 × 3.8 4A / 28 mΩ Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s) :TPS65170 TPS65170 www.ti.com SLVSA27 – OCTOBER 2009 Rectifier Diode Selection (Buck Converter) To achieve good efficiency, the rectifier diode should be a Schottky type. Its reverse voltage rating should be higher than the maximum VIN. The average rectified forward current through the diode can be calculated using Equation 15. IRECT(AVG) = ILOGIC(EFFECTIVE) ´ (1 - D) (15) A Schottky diode with 2A average rectified current rating is adequate for most applications. Smaller diodes can be used in applications with lower output current, however, the diode must be able to handle the power dissipated in it, which can be calculated using Equation 16. PRECT = IRECT(AVG) ´ VF (16) Table 5. Buck Converter Rectifier Diode Selection PART NUMBER VR / IAVG VF RθJA SIZE MBRS320 20V / 3A 0.44V at 3A 46°C/W SMC COMPONENT SUPPLIER International Rectifier SL22 20V / 2A 0.44V at 2A 75°C/W SMB Vishay Semiconductor SS22 20V / 2A 0.50V at 2A 75°C/W SMB Fairchild Semiconductor Output Capacitance Selection (Buck Converter) To minimize output voltage ripple, the output capacitors should be good quality ceramic types with low ESR. The buck converter is stable over a range of output capacitance values, but an output capacitance of 44µF is a good starting point for typical applications. POSITIVE CHARGE PUMP CONTROLLER The positive charge pump is driven directly from the boost converter's switch node and regulated by controlling the current through an external PNP transistor. An internal block diagram of the positive charge pump is shown in Figure 27 and a typical application circuit in Figure 28. During normal operation, the TPS65170 is able to provide up to 5mA of base current and is designed to work best with transistors whose DC gain (hFE) is between 100 and 300. The charge pump is protected against short-circuits on its output, which are detected when the voltage on the charge pump's feedback pin (VFBP) is below 100mV. During short-circuit mode, the base current available from the CTRLP pin is limited to 55µA (typical). Note that if a short-circuit is detected during normal operation, boost converter switching is also halted until VFBP > 100mV. NOTE The emitter of the external PNP transistor should always be connected to VS, the output of the boost converter at the output side of the isolation switch. The TPS65170 uses the CTRLP pin to sense the voltage across the isolation switch and control boost converter start-up. Connecting the emitter of the external PNP transistor to any other voltage (e.g., VIN) will prevent proper start-up of the boost converter and positive charge pump. Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s) :TPS65170 19 TPS65170 SLVSA27 – OCTOBER 2009 www.ti.com Figure 27. Positive Charge Pump Internal Block Diagram Figure 28. Positive Charge Pump Application Circuit POSITIVE CHARGE PUMP DESIGN PROCEDURE Setting the Output Voltage (Positive Charge Pump) The positive charge pump's output voltage is programmed by a resistor divider according to Equation 17. æ R ö VGH = VREF ´ ç 1 + 1 ÷ R2 ø è (17) Where VREF is the TPS65170's internal 1.24V reference. Rearranging Equation 17, the values of R1 and R2 can be easily calculated: æ VOUT ö R1 = R 2 ´ ç - 1÷ è VREF ø (18) A current of the order of 1mA through the resistor network ensures good accuracy and increases the circuit's immunity to noise. It also ensures a minimum load on the charge pump, which reduces output voltage ripple under no-load conditions. A good approach is to assume a value of about 1.2kΩ for the lower resistor (R2) and then select the upper resistor (R1) to set the desired output voltage. Note that the maximum voltage in an application is determined by the boost converter's output voltage and the voltage drop across the diodes and PNP transistor. For a typical application in which the positive charge pump is configured as a voltage doubler, the maximum output voltage is given by Equation 19. 20 Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s) :TPS65170 TPS65170 www.ti.com SLVSA27 – OCTOBER 2009 VG H(MA X) = (2 ´ VS ) - (2 × VF ) - VCE (19) Where VS is the output voltage of the boost converter, VF is the forward voltage of each diode and VCE is the collector-emitter voltage of the PNP transistor (recommended to be at least 1V, to avoid transistor saturation). Selecting the Feed-Forward Capacitor (Positive Charge Pump) To improve transient performance, a feed-forward capacitor connected across the upper feedback resistor (R1) is recommended. The feed-forward capacitor modifies the frequency response of the feedback network by adding the zero, which improves high frequency gain. For typical applications, a zero at 5kHz is a good place to start, in which case CFF can be calculated using Equation 20. 1 CFF = 2 ´ p ´ 5 kHz ´ R1 (20) Selecting the PNP Transistor (Positive Charge Pump) The PNP transistor used to regulate VGH should have a DC gain (hFE) of at least 100 when its collector current is equal to the charge pump's output current. The transistor should also be able to withstand voltages up to 2×VS across its collector-emitter (VCE). The power dissipated in the transistor is given by Equation 21. The transistor must be able to dissipate this power without its junction becoming too hot. Note that the ability to dissipate power depends heavily on adequate PCB thermal design. PQ = éë(2 ´ VS ) - (2 ´ VF ) - VGH ùû ´ IGH (21) Where IGH is the mean (not RMS) output current drawn from the charge pump. A pull-up resistor is also required between the transistor's base and emitter. The value of this resistor is not critical, but it should be large enough not to divert significant current away from the base of the transistor. A value of 100kΩ is suitable for most applications. Selecting the Diodes (Positive Charge Pump) Small-signal diodes can be used for most low current applications (
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