PROCESS
CPD80V
Switching Diode
High Voltage Switching Diode Chip
PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization EPITAXIAL PLANAR 16 x 16 MILS 7.1 MILS 6.5 x 6.5 MILS Al - 30,000Å Au-As - 13,000Å
GEOMETRY GROSS DIE PER 5 INCH WAFER 64,704 PRINCIPAL DEVICE TYPES CMPD2003 CMPD2004 CMPD2005 1N3070 CMDD2004 CMSD2004 CMOD2004 CMXD2004 CMLD2004 BACKSIDE CATHODE
R3 (22-March 2010)
w w w. c e n t r a l s e m i . c o m
PROCESS
CPD80V
Typical Electrical Characteristics
R3 (22-March 2010)
w w w. c e n t r a l s e m i . c o m
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