| H7826P | HAMAMATSU[HamamatsuCorporation] | H7826P - photosensor modules consist of a 19-mm (3/4") diameter head-on photomultiplier - Hamamatsu Corporation | | | 获取价格 |
| H7711-13 | HAMAMATSU[HamamatsuCorporation] | H7711-13 - Compact Side-on PMT - Hamamatsu Corporation | | | 获取价格 |
| H7710-12 | HAMAMATSU[HamamatsuCorporation] | H7710-12 - Compact Side-on PMT - Hamamatsu Corporation | | | 获取价格 |
| H6780-04 | HAMAMATSU[HamamatsuCorporation] | H6780-04 - Photosensor Modules - Hamamatsu Corporation | | | 获取价格 |
| H6779-06 | HAMAMATSU[HamamatsuCorporation] | H6779-06 - Photosensor Modules - Hamamatsu Corporation | | | 获取价格 |
| H5783P-03 | HAMAMATSU[HamamatsuCorporation] | H5783P-03 - Photosensor Modules - Hamamatsu Corporation | | | 获取价格 |
| H5783P-02 | HAMAMATSU[HamamatsuCorporation] | H5783P-02 - Photosensor Modules - Hamamatsu Corporation | | | 获取价格 |
| H5783-20 | HAMAMATSU[HamamatsuCorporation] | H5783-20 - Photosensor Modules - Hamamatsu Corporation | | | 获取价格 |
| H5773P-20 | HAMAMATSU[HamamatsuCorporation] | H5773P-20 - Photosensor Modules - Hamamatsu Corporation | | | 获取价格 |
| H5773P-03 | HAMAMATSU[HamamatsuCorporation] | H5773P-03 - Photosensor Modules - Hamamatsu Corporation | | | 获取价格 |
| H5773-04 | HAMAMATSU[HamamatsuCorporation] | H5773-04 - Photosensor Modules - Hamamatsu Corporation | | | 获取价格 |
| S1880 | HAMAMATSU[HamamatsuCorporation] | S1880 - Two-dimensional PSD Non-discrete position sensor utilizing photodiode surface resistance - Hamamatsu Corporation | | | 获取价格 |
| C11165 | HAMAMATSU[HamamatsuCorporation] | C11165 - Driver circuit for CCD image sensor Interface of computer: USB 2.0 - Hamamatsu Corporation | | | 获取价格 |
| S1336-8BQ | HAMAMATSU[HamamatsuCorporation] | S1336-8BQ - Si photodiode UV to near IR for precision photometry - Hamamatsu Corporation | | | 获取价格 |
| S1336-8BK | HAMAMATSU[HamamatsuCorporation] | S1336-8BK - Si photodiode UV to near IR for precision photometry - Hamamatsu Corporation | | | 获取价格 |
| S1336-5BK | HAMAMATSU[HamamatsuCorporation] | S1336-5BK - Si photodiode UV to near IR for precision photometry - Hamamatsu Corporation | | | 获取价格 |
| S1223_06 | HAMAMATSU[HamamatsuCorporation] | S1223_06 - Si PIN photodiode For visible to IR, precision photometry - Hamamatsu Corporation | | | 获取价格 |
| S11510_10 | HAMAMATSU[HamamatsuCorporation] | S11510_10 - Enhanced near infrared sensitivity: QE=40% (λ=1000 nm) - Hamamatsu Corporation | | | 获取价格 |
| S11510-1106 | HAMAMATSU[HamamatsuCorporation] | S11510-1106 - Enhanced near infrared sensitivity: QE=40% (λ=1000 nm) - Hamamatsu Corporation | | | 获取价格 |
| C10633-23 | HAMAMATSU[HamamatsuCorporation] | C10633-23 - Good sensitivity in 900 nm to 1700 nm range 320 × 256 pixels with EIA - Hamamatsu Corporation | | | 获取价格 |
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