| IPT0408-35B | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0408-35B - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0408-35A | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0408-35A - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0408-25F | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0408-25F - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0408-18F | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0408-18F - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0408-10A | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0408-10A - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0406-50F | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0406-50F - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0406-35A | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0406-35A - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0406-10D | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0406-10D - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0406-05B | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0406-05B - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPS825-40A | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS825-40A - silicon controlled rectifiers - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPS812-15B | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS812-15B - silicon controlled rectifiers - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPS620-30F | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS620-30F - silicon controlled rectifiers - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPS616-25B | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS616-25B - silicon controlled rectifiers - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPS604-06D | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS604-06D - High sensitive triggering levels - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPS6008-03U | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS6008-03U - High sensitive triggering levels - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| CS5N60A4H | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):600V;连续漏极电流(Id):5A;功率(Pd):85W;导通电阻(RDS(on)@Vgs,Id):1.7Ω@10V,2.5A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| CS120N08A8 | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):85V;连续漏极电流(Id):120A;功率(Pd):208W;导通电阻(RDS(on)@Vgs,Id):7.5mΩ@10V,60A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| CS2N60A3H | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):600V;连续漏极电流(Id):2A;功率(Pd):35W;导通电阻(RDS(on)@Vgs,Id):4.5Ω@10V,1A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| 3DD13003E1D | Wuxi China Resources Microelectronics Limited | 晶体管类型:1个NPN和1个PNP;集射极击穿电压(Vceo):400V;集电极电流(Ic):1.3A;功率(Pd):800mW;集电极截止电流(Icbo):100uA;集电极-发射极饱和电压(VCE(sat)@Ic,Ib):400mV@500mA,100mA;直流电流增益(hFE@Ic,Vce):15@200mA,5V;特征频率(fT):5MHz;工作温度:+150℃@(Tj); | | | 获取价格 |
| CS65L83BP | Wuxi China Resources Microelectronics Limited | | | | 获取价格 |
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