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型号厂商描述数据手册替代料参考价格
IPT04Q06-AEDIPS[IPSEMICONDUCTORCO.,LTD.] IPT04Q06-AED - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD.获取价格
IPT0408-50FIPS[IPSEMICONDUCTORCO.,LTD.] IPT0408-50F - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD.获取价格
IPT0408-10DIPS[IPSEMICONDUCTORCO.,LTD.] IPT0408-10D - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD.获取价格
IPT0408-05IIPS[IPSEMICONDUCTORCO.,LTD.] IPT0408-05I - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD.获取价格
IPT0408-05DIPS[IPSEMICONDUCTORCO.,LTD.] IPT0408-05D - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD.获取价格
IPT0408-05BIPS[IPSEMICONDUCTORCO.,LTD.] IPT0408-05B - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD.获取价格
IPT0406-10AIPS[IPSEMICONDUCTORCO.,LTD.] IPT0406-10A - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD.获取价格
IPT0406-05IIPS[IPSEMICONDUCTORCO.,LTD.] IPT0406-05I - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD.获取价格
IPT0406-05AIPS[IPSEMICONDUCTORCO.,LTD.] IPT0406-05A - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD.获取价格
IPS825-40BIPS[IPSEMICONDUCTORCO.,LTD.] IPS825-40B - silicon controlled rectifiers - IP SEMICONDUCTOR CO., LTD.获取价格
IPS812-05BIPS[IPSEMICONDUCTORCO.,LTD.] IPS812-05B - silicon controlled rectifiers - IP SEMICONDUCTOR CO., LTD.获取价格
IPS808-05DIPS[IPSEMICONDUCTORCO.,LTD.] IPS808-05D - High sensitive triggering levels - IP SEMICONDUCTOR CO., LTD.获取价格
IPS620-30BIPS[IPSEMICONDUCTORCO.,LTD.] IPS620-30B - silicon controlled rectifiers - IP SEMICONDUCTOR CO., LTD.获取价格
IPS608-05DIPS[IPSEMICONDUCTORCO.,LTD.] IPS608-05D - High sensitive triggering levels - IP SEMICONDUCTOR CO., LTD.获取价格
IPS604-08DIPS[IPSEMICONDUCTORCO.,LTD.] IPS604-08D - High sensitive triggering levels - IP SEMICONDUCTOR CO., LTD.获取价格
IPS604-03IIPS[IPSEMICONDUCTORCO.,LTD.] IPS604-03I - High sensitive triggering levels - IP SEMICONDUCTOR CO., LTD.获取价格
CS2N60FA9HWuxi China Resources Microelectronics Limited类型:N沟道;漏源电压(Vdss):600V;连续漏极电流(Id):2A;功率(Pd):24W;导通电阻(RDS(on)@Vgs,Id):4.5Ω@10V,1A;阈值电压(Vgs(th)@Id):4V@250uA;获取价格
CS8N60FA9HWuxi China Resources Microelectronics Limited类型:N沟道;漏源电压(Vdss):600V;连续漏极电流(Id):8A;功率(Pd):45W;导通电阻(RDS(on)@Vgs,Id):1.2Ω@10V,4A;阈值电压(Vgs(th)@Id):4V@250uA;获取价格
CS54123CSWuxi China Resources Microelectronics Limited获取价格
CS2N65A4Wuxi China Resources Microelectronics Limited类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):2A;功率(Pd):35W;导通电阻(RDS(on)@Vgs,Id):5Ω@10V,1A;阈值电压(Vgs(th)@Id):4V@250uA;获取价格