| PC817B | Wuxi China Resources Microelectronics Limited | PC817B | | | 获取价格 |
| CS13N50FA9R | Wuxi China Resources Microelectronics Limited | CS13N50FA9R | | | 获取价格 |
| CRTM030N04L | Wuxi China Resources Microelectronics Limited | Trench N-MOSFET 40V, 2.1mΩ, 80A | | | 获取价格 |
| CRSS052N08N | Wuxi China Resources Microelectronics Limited | TO263-3 | | | 获取价格 |
| CS630A4H | Wuxi China Resources Microelectronics Limited | MOS管 N-Channel VDS=200V VGS=±30V ID=9A RDS(ON)=280mΩ@10V TO252 | | | 获取价格 |
| IPT40Q06-SEH | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT40Q06-SEH - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT2508-CEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT2508-CEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT20Q08-CEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT20Q08-CEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT20Q06-TEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT20Q06-TEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT2006-CEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT2006-CEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT16Q08-BEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT16Q08-BEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT16Q06-CEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT16Q06-CEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT16Q06-BEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT16Q06-BEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT1608-SEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT1608-SEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT1608-CEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT1608-CEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT1606-CEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT1606-CEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT12Q08-CEF | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT12Q08-CEF - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT12Q08-BEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT12Q08-BEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT12Q06-CEF | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT12Q06-CEF - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT12Q06-CEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT12Q06-CEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
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