| IPT04Q06-DED | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT04Q06-DED - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT04Q06-AEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT04Q06-AEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0408-05A | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0408-05A - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0406-35I | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0406-35I - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0406-35B | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0406-35B - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0406-18F | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0406-18F - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0406-10I | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0406-10I - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0406-05D | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0406-05D - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0108-XXU | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0108-XXU - suitable for low power AC Switching application - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPS816-25B | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS816-25B - silicon controlled rectifiers - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPS608-05I | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS608-05I - High sensitive triggering levels - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPS604-08I | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS604-08I - High sensitive triggering levels - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPS6008-06U | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS6008-06U - High sensitive triggering levels - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPS6008-05U | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS6008-05U - High sensitive triggering levels - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| CS4N80FA9HD | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):800V;连续漏极电流(Id):4A;功率(Pd):35W;导通电阻(RDS(on)@Vgs,Id):2.2Ω@10V,2A;阈值电压(Vgs(th)@Id):4V@250uA;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):865pF@25V;反向传输电容(Crss@Vds):7.5pF@25V;工作温度:+150℃@(Tj); | | | 获取价格 |
| CS4N65A8HD | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):4A;功率(Pd):75W;导通电阻(RDS(on)@Vgs,Id):2.5Ω@10V,2A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| CS4N65A3HD1-G | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):4A;功率(Pd):75W;导通电阻(RDS(on)@Vgs,Id):2Ω@10V,2A;阈值电压(Vgs(th)@Id):4V@250uA;栅极电荷(Qg@Vgs):14.5nC@10V;输入电容(Ciss@Vds):544pF@25V;反向传输电容(Crss@Vds):8.5pF@25V;工作温度:+150℃@(Tj); | | | 获取价格 |
| CS2837AND | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):500V;连续漏极电流(Id):20A;功率(Pd):230W;导通电阻(RDS(on)@Vgs,Id):260mΩ@10V,10A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| CS10N70FA9R | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):700V;连续漏极电流(Id):10A;功率(Pd):40W;导通电阻(RDS(on)@Vgs,Id):1.05Ω@10V,5A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| CD7378CZ | Wuxi China Resources Microelectronics Limited | 功放类型:-;输出功率:-; | | | 获取价格 |
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