| IPS625-40A | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS625-40A - silicon controlled rectifiers - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPS612-15B | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS612-15B - silicon controlled rectifiers - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPS612-05B | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS612-05B - silicon controlled rectifiers - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPS604-05I | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS604-05I - High sensitive triggering levels - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPS604-05D | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS604-05D - High sensitive triggering levels - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPS604-03D | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS604-03D - High sensitive triggering levels - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPS6008-08U | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS6008-08U - High sensitive triggering levels - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| 3DD13007X1 | Wuxi China Resources Microelectronics Limited | 晶体管类型:NPN;集射极击穿电压(Vceo):400V;集电极电流(Ic):8A;功率(Pd):80W;集电极截止电流(Icbo):100uA;集电极-发射极饱和电压(VCE(sat)@Ic,Ib):500mV@5A,1A;特征频率(fT):10MHz;工作温度:+150℃@(Tj); | | | 获取价格 |
| CS4N60A8HD | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):600V;连续漏极电流(Id):4A;功率(Pd):75W;导通电阻(RDS(on)@Vgs,Id):2.3Ω@10V,2A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| CS20N65FA9H | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):20A;功率(Pd):85W;导通电阻(RDS(on)@Vgs,Id):500mΩ@10V,10A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| CS12N65FA9R | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):12A;功率(Pd):42W;导通电阻(RDS(on)@Vgs,Id):800mΩ@10V,6A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| CD4440CS | Wuxi China Resources Microelectronics Limited | 音频功率放大器的类型:-;输出类型:-;输出功率:-;工作电压:-; | | | 获取价格 |
| CS10N80FA9D | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):800V;连续漏极电流(Id):10A;功率(Pd):60W;导通电阻(RDS(on)@Vgs,Id):900mΩ@10V,5A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| CD7377CZ | Wuxi China Resources Microelectronics Limited | | | | 获取价格 |
| CS1N60A1H | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):600V;连续漏极电流(Id):800mA;功率(Pd):3W;导通电阻(RDS(on)@Vgs,Id):15Ω@10V,400mA;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| CS6N60FA9H | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):600V;连续漏极电流(Id):6A;功率(Pd):34W;导通电阻(RDS(on)@Vgs,Id):1.7Ω@10V,3A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| CS3205B8 | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):120A;功率(Pd):230W;导通电阻(RDS(on)@Vgs,Id):8mΩ@10V,50A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| CS54123CB | Wuxi China Resources Microelectronics Limited | | | | 获取价格 |
| CS4N65A3HD | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):4A;功率(Pd):75W;导通电阻(RDS(on)@Vgs,Id):2.5Ω@10V,2A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| CD1517CP | Wuxi China Resources Microelectronics Limited | 功放类型:-;输出功率:-; | | | 获取价格 |
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