| IPT0408-10D | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0408-10D - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0408-05I | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0408-05I - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0408-05D | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0408-05D - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0408-05B | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0408-05B - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0406-10A | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0406-10A - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0406-05I | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0406-05I - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT0406-05A | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT0406-05A - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPS825-40B | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS825-40B - silicon controlled rectifiers - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPS812-05B | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS812-05B - silicon controlled rectifiers - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPS808-05D | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS808-05D - High sensitive triggering levels - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPS620-30B | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS620-30B - silicon controlled rectifiers - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPS608-05D | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS608-05D - High sensitive triggering levels - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPS604-08D | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS604-08D - High sensitive triggering levels - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPS604-03I | IPS[IPSEMICONDUCTORCO.,LTD.] | IPS604-03I - High sensitive triggering levels - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| CS2N60FA9H | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):600V;连续漏极电流(Id):2A;功率(Pd):24W;导通电阻(RDS(on)@Vgs,Id):4.5Ω@10V,1A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| CS8N60FA9H | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):600V;连续漏极电流(Id):8A;功率(Pd):45W;导通电阻(RDS(on)@Vgs,Id):1.2Ω@10V,4A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| CS54123CS | Wuxi China Resources Microelectronics Limited | | | | 获取价格 |
| CS2N65A4 | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):650V;连续漏极电流(Id):2A;功率(Pd):35W;导通电阻(RDS(on)@Vgs,Id):5Ω@10V,1A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| CS20N50A8H | Wuxi China Resources Microelectronics Limited | 类型:N沟道;漏源电压(Vdss):500V;连续漏极电流(Id):20A;功率(Pd):230W;导通电阻(RDS(on)@Vgs,Id):300mΩ@10V,10A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| CD2030ACZ | Wuxi China Resources Microelectronics Limited | | | | 获取价格 |
