| CS5N60A8H | Wuxi China Resources Microelectronics Limited | CS5N60A8H | | | 获取价格 |
| CRTM024N03L2-G | Wuxi China Resources Microelectronics Limited | MOS管 N-Channel VDS=30V VGS=±20V ID=60A RDS(ON)=2.2mΩ@10V DFN_5X6MM | | | 获取价格 |
| CS10N70FA9D | Wuxi China Resources Microelectronics Limited | CS10N70FA9D | | | 获取价格 |
| CRSS038N08N | Wuxi China Resources Microelectronics Limited | CRSS038N08N | | | 获取价格 |
| CS5755MTO | Wuxi China Resources Microelectronics Limited | 电机驱动器及控制器 SOP-23 600V 15A Power module | | | 获取价格 |
| CS5735MTO | Wuxi China Resources Microelectronics Limited | 三相无刷直流电机驱动电路，VCC=15V | | | 获取价格 |
| CRST041N08N | Wuxi China Resources Microelectronics Limited | SkyMOS1 N-MOSFET 85V, 3.4mΩ, 120A TO220 | | | 获取价格 |
| CRSS037N10N | Wuxi China Resources Microelectronics Limited | TO263-3 | | | 获取价格 |
| CRSS063N08N | Wuxi China Resources Microelectronics Limited | SkyMOS1 N-MOSFET 85V, 5.6mΩ, 80A TO263 | | | 获取价格 |
| IPT2508-CEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT2508-CEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT2506-BEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT2506-BEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT20Q08-TEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT20Q08-TEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT20Q08-CEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT20Q08-CEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT20Q06-TEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT20Q06-TEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT2008-DEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT2008-DEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT2008-BEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT2008-BEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT2008-BEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT2008-BEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT1608-SEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT1608-SEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT1608-CEB | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT1608-CEB - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
| IPT1606-SEA | IPS[IPSEMICONDUCTORCO.,LTD.] | IPT1606-SEA - High current density due to double mesa technology - IP SEMICONDUCTOR CO., LTD. | | | 获取价格 |
