VB7101M | VBsemi Electronics Co. Ltd | MOS管 N-Channel VDS=100V VGS=±20V ID=3A RDS(ON)=105mΩ@4.5V TSOP6 | | | 获取价格 |
VBK162K | VBsemi Electronics Co. Ltd | Vds=60V Id=300mA SC-70-3 | | | 获取价格 |
VBK4223N | VBsemi Electronics Co. Ltd | MOS管 Dual P-Channel VDS=20V VGS=±12V ID=1.6A RDS(ON)=155mΩ@4.5V SOT363 | | | 获取价格 |
VBTA4250N | VBsemi Electronics Co. Ltd | MOS管 Dual P-Channel VDS=20V VGS=±12V ID=300mA RDS(ON)=650mΩ@4.5V SC75-6 | | | 获取价格 |
VBA2311 | VBsemi Electronics Co. Ltd | MOS管 P-Channel VDS=30V VGS=±20V ID=8.7A RDS(ON)=12mΩ@4.5V SOIC8_150MIL | | | 获取价格 |
VBA2333 | VBsemi Electronics Co. Ltd | MOS管 P-Channel VDS=30V VGS=±20V ID=4.1A RDS(ON)=56mΩ@4.5V SOIC8_150MIL | | | 获取价格 |
VBA1311 | VBsemi Electronics Co. Ltd | MOS管 N-Channel VDS=30V VGS=±20V ID=9A RDS(ON)=11mΩ@4.5V SOIC8_150MIL | | | 获取价格 |
VBA1210 | VBsemi Electronics Co. Ltd | MOS管 N-Channel VDS=20V VGS=±16V ID=10A RDS(ON)=15mΩ@4.5V SOIC8_150MIL | | | 获取价格 |
AM2358NE | VBsemi Electronics Co. Ltd | Vds=60V Id=4A SOT-23-3 | | | 获取价格 |
SI2301CDS-T1 | VBsemi Electronics Co. Ltd | Vds=20V Id=4.5A SOT-23-3 | | | 获取价格 |
Si2342DS-T1 | VBsemi Electronics Co. Ltd | Vds=20V Id=5A SOT-23-3 | | | 获取价格 |
TSM2312CX | VBsemi Electronics Co. Ltd | Vds=20V Id=6A SOT-23-3 | | | 获取价格 |
VB1240 | VBsemi Electronics Co. Ltd | Vds=20V Id=5A SOT-23-3 | | | 获取价格 |
FQD13N06-VB | VBsemi Electronics Co. Ltd | | | | 获取价格 |
AP9575GM-VB | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):60V;连续漏极电流(Id):8A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):50mΩ@10V,8A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
FQT5P10-VB | VBsemi Electronics Co. Ltd | | | | 获取价格 |
APM2309AC-VB | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):30V;连续漏极电流(Id):5.6A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):46mΩ@10V,5.6A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
AM2308N-T1-PF-VB | VBsemi Electronics Co. Ltd | | | | 获取价格 |
AOD482-VB | VBsemi Electronics Co. Ltd | | | | 获取价格 |
SI9948AEY-T1-E3-VB | VBsemi Electronics Co. Ltd | | | | 获取价格 |