| FDV301N-VB | VBsemi Electronics Co. Ltd | MOS管 N-Channel VDS=20V VGS=±12V ID=5A RDS(ON)=28mΩ@4.5V SOT23 | | | 获取价格 |
| 2N7002KB-VB | VBsemi Electronics Co. Ltd | MOS管 N-Channel VDS=60V VGS=±20V ID=250mA RDS(ON)=3.1Ω@4.5V SOT23 | | | 获取价格 |
| DMC2038LVT-7-F-VB | VBsemi Electronics Co. Ltd | 类型:1个N沟道和1个P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):4.2A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):36mΩ@4.5V,4.2A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| AO6601-VB | VBsemi Electronics Co. Ltd | 类型:1个N沟道和1个P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):4.2A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):36mΩ@4.5V,4.2A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| BSL302SN-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):6A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):30mΩ@10V,6A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| P2402CAG-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):6A;功率(Pd):2.5W;导通电阻(RDS(on)@Vgs,Id):23Ω@10V,5.5A;阈值电压(Vgs(th)@Id):1.5V@250uA;栅极电荷(Qg@Vgs):4.2nC@4.5V;输入电容(Ciss@Vds):424pF@15V;反向传输电容(Crss@Vds):42pF@15V;工作温度:-55℃~+150℃@(Tj); | | | 获取价格 |
| FDC658AP-VB | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):30V;连续漏极电流(Id):4.8A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):49mΩ@10V,4.8A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| AM3407PE-VB | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):30V;连续漏极电流(Id):4A;功率(Pd):2W;导通电阻(RDS(on)@Vgs,Id):55mΩ@10V,4.1A; | | | 获取价格 |
| VBFB1203M | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):200V;连续漏极电流(Id):8A;功率(Pd):96W;导通电阻(RDS(on)@Vgs,Id):270mΩ@10V,8A;阈值电压(Vgs(th)@Id):4V@250uA; | | | 获取价格 |
| IRF4905PBF-VB | VBsemi Electronics Co. Ltd | MOS管 P-Channel VDS=60V VGS=±20V ID=9.2A RDS(ON)=26mΩ@4.5V TO-220-3 | | | 获取价格 |
| SUD50P08-25L-E3-VB | VBsemi Electronics Co. Ltd | 类型:P沟道;漏源电压(Vdss):-100V;连续漏极电流(Id):-8.8A;导通电阻(RDS(on)@Vgs,Id):250mΩ@-10V,-8.8A; | | | 获取价格 |
| QM4002AD-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):40V;连续漏极电流(Id):55A;功率(Pd):100W;导通电阻(RDS(on)@Vgs,Id):12mΩ@10V,38.8A;阈值电压(Vgs(th)@Id):2.5V@250uA;栅极电荷(Qg@Vgs):42nC@4.5V;输入电容(Ciss@Vds):1.801nF@15V;反向传输电容(Crss@Vds):570pF@15V;工作温度:-55℃~+175℃@(Tj); | | | 获取价格 |
| IRFR9024NTRPBF-VB | VBsemi Electronics Co. Ltd | MOSFETs P沟道 耐压:60V 电流:30A TO252 | | | 获取价格 |
| IRLR3636TRPBF-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):60V;连续漏极电流(Id):97A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):6.3mΩ@10V,97A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| AOD240-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):40V;连续漏极电流(Id):59A;功率(Pd):3.13W;导通电阻(RDS(on)@Vgs,Id):6.4mΩ@10V,30A;阈值电压(Vgs(th)@Id):2.5V@250uA; | | | 获取价格 |
| IRFR120NTRPBF-VB | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):15A;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):114mΩ@10V,15A;阈值电压(Vgs(th)@Id):-;栅极电荷(Qg@Vgs):-;输入电容(Ciss@Vds):-;反向传输电容(Crss@Vds):-; | | | 获取价格 |
| VBE1206 | VBsemi Electronics Co. Ltd | 类型:N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):65A;功率(Pd):71W;导通电阻(RDS(on)@Vgs,Id):8mΩ@2.5V,20A;阈值电压(Vgs(th)@Id):1.5V@250uA; | | | 获取价格 |
| NDS8435A-NL-VB | VBsemi Electronics Co. Ltd | MOSFETs P沟道 耐压:30V 电流:9A SOP8 | | | 获取价格 |
| SPD07N60S5-VB | VBsemi Electronics Co. Ltd | MOSFETs N沟道 耐压:650V 电流:7A TO-252 | | | 获取价格 |
| IRLML5103GTRPBF-VB | VBsemi Electronics Co. Ltd | MOSFETs P沟道 耐压:30V 电流:5.6A SOT-23 | | | 获取价格 |
