CTA2P1N-7-F

SPICE MODEL: CTA2P1N CTA2P1N COMPLEX TRANSISTOR ARRAY Features NEW PRODUCT · · · · Combines MMBT4403 type transistor with 2N7002 type MOSFET Small Surface Mount Package NPN/P-Channel Complement Available: CTA2N1P Lead Free/RoHS Compliant (Note 1) A SOT-363 Dim A B C D G H K M Min 0.10 1.15 2.00 0.30 1.80 ¾ 0.90 0.25 0.10 0° Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8° Mechanical Data · · · · · · · · · Case: SOT-363 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish annealed over Alloy 42 leadframe). Terminal Connections: See Diagram Marking: A80, See Page 3 Ordering Information: See Page 3 Weight: 0.006 grams (approx.) Q1 A80 BC 0.65 Nominal F H J K L M a J D GQ2 F SQ2 L CQ1 All Dimensions in mm Q2 EQ1 BQ1 DQ2 Maximum Ratings, Total Device @ TA = 25°C unless otherwise specified Characteristic Power Dissipation (Note 2) Thermal Resistance, Junction to Ambient (Note 2) Operating and Storage and Temperature Range Symbol Pd RqJA Tj, TSTG Value 150 833 -55 to +150 Unit mW °C/W °C Maximum Ratings, Q1, MMBT4403 PNP Transistor Element Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Symbol VCBO VCEO VEBO IC @ TA = 25°C unless otherwise specified Value -40 -40 -5.0 -600 Unit V V V mA Maximum Ratings, Q2, 2N7002 N-Channel MOSFET Element Characteristic Drain-Source Voltage Drain-Gate Voltage RGS £ 1.0MW Gate-Source Voltage Drain Current (Note 2) Continuous Pulsed Continuous Continuous @ 100°C Pulsed Symbol VDSS VDGR VGSS ID @ TA = 25°C unless otherwise specified Value 60 60 ±20 ±40 115 73 800 Units V V V mA Notes: 1. No purposefully added lead. DS30296 Rev. 7 - 2 1 of 7 www.diodes.com CTA2P1N ã Diodes Incorporated Electrical Characteristics, Q1, MMBT4403 PNP Transistor Element @ TA = 25°C unless otherwise specified NEW PRODUCT Characteristic OFF CHARACTERISTICS (Note 3) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 3) Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICEX IBL Min -40 -40 -5.0 ¾ ¾ 30 60 100 100 20 ¾ -0.75 ¾ ¾ ¾ 1.5 0.1 60 1.0 200 Max ¾ ¾ ¾ -100 -100 ¾ ¾ ¾ 300 ¾ -0.40 -0.75 -0.95 -1.30 8.5 30 15 8.0 500 100 ¾ Unit V V V nA nA Test Condition IC = -100mA, IE = 0 IC = -1.0mA, IB = 0 IE = -100mA, IC = 0 VCE = -35V, VEB(OFF) = -0.4V VCE = -35V, VEB(OFF) = -0.4V IC = -100µA, VCE = IC = -1.0mA, VCE = IC = -10mA, VCE = IC = -150mA, VCE = IC = -500mA, VCE = -1.0V -1.0V -1.0V -2.0V -2.0V DC Current Gain hFE ¾ Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small Signal Current Gain Output Admittance Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time VCE(SAT) VBE(SAT) V V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA VCB = -10V, f = 1.0MHz, IE = 0 VEB = -0.5V, f = 1.0MHz, IC = 0 Ccb Ceb hie hre hfe hoe fT pF pF kW x 10-4 ¾ mS MHz VCE = -10V, IC = -1.0mA, f = 1.0kHz VCE = -10V, IC = -20mA, f = 100MHz td tr ts tf ¾ ¾ ¾ ¾ 15 20 225 30 ns ns ns ns VCC = -30V, IC = -150mA, VBE(off) = -2.0V, IB1 = -15mA VCC = -30V, IC = -150mA, IB1 = IB2 = -15mA Electrical Characteristics, Q2, 2N7002 N-Channel MOSFET Element @ TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 3) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time tD(ON) tD(OFF) ¾ ¾ 7.0 11 20 20 ns ns VDD = 30V, ID = 0.2A, RL = 150W, VGEN = 10V, RGEN = 25W Ciss Coss Crss ¾ ¾ ¾ 22 11 2.0 50 25 5.0 pF pF pF VDS = 25V, VGS = 0V f = 1.0MHz VGS(th) @ Tj = 25°C @ Tj = 125°C RDS (ON) ID(ON) gFS 1.0 ¾ 0.5 80 ¾ 3.2 4.4 1.0 ¾ 2.0 7.5 13.5 ¾ ¾ V W A mS VDS = VGS, ID =-250mA VGS = 5.0V, ID = 0.05A VGS = 10V, ID = 0.5A VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A @ TC = 25°C @ TC = 125°C BVDSS IDSS IGSS 60 ¾ ¾ 70 ¾ ¾ ¾ 1.0 500 ±10 V µA nA VGS = 0V, ID = 10mA VDS = 60V, VGS = 0V VGS = ±20V, VDS = 0V Symbol Min Typ Max Unit Test Condition Note: 2. Device mounted on FR-4 PCB; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 3. Short test pulse used to minimize self-heating effect. DS30296 Rev. 7 - 2 2 of 7 www.diodes.com CTA2P1N Ordering Information (Note 4) Packaging SOT-363 Shipping 3000/Tape & Reel NEW PRODUCT Device CTA2P1N-7-F Notes: 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information A80 Date Code Key Year Code Month Code 2001 M Jan 1 2002 N Feb 2 2003 P March 3 Apr 4 A80 = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September 2004 R May 5 YM 2005 S Jun 6 2006 T Jul 7 Aug 8 2007 U Sep 9 2008 V Oct O Nov N 2009 W Dec D DS30296 Rev. 7 - 2 3 of 7 www.diodes.com CTA2P1N MMBT4403 Section NEW PRODUCT 30 20 Cibo CAPACITANCE (pF) 10 5.0 Cobo 1.0 -0.1 -1.0 -10 -30 REVERSE VOLTAGE (V) Fig. 1 Typical Capacitance VCE, COLLECTOR-EMITTER VOLTAGE (V) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 IC = 10mA IC = 1mA IC = 100mA I = 300mA C IC = 30mA 0.01 0.1 1 10 100 IB, BASE CURRENT (mA) Fig. 2 Typical Collector Saturation Region 0.5 VBE(ON), BASE EMITTER VOLTAGE (V) VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) IC IB = 10 0.4 TA = 25°C 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 1 10 100 TA = 150°C TA = -50°C TA = 25°C VCE = 5V 0.3 0.2 TA = 150°C 0.1 TA = 50°C 0 1 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 3 Collector Emitter Saturation Voltage vs. Collector Current IC, COLLECTOR CURRENT (mA) Fig. 4 Base-Emitter Voltage vs. Collector Current DS30296 Rev. 7 - 2 4 of 7 www.diodes.com CTA2P1N MMBT4403 Section NEW PRODUCT 1000 VCE = 5V TA = 150°C TA = 25°C 100 TA = -50°C 1000 fT, GAIN BANDWIDTH PRODUCT (MHz) VCE = 5V hFE, DC CURRENT GAIN 100 10 10 1 1 10 1000 100 IC, COLLECTOR CURRENT (mA) Fig. 5 DC Current Gain vs. Collector Current 1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 6 Gain Bandwidth Product vs. Collector Current 200 PD, POWER DISSIPATION (mW) 150 100 50 0 0 25 50 75 100 125 150 175 200 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Max Power Dissipation vs Ambient Temperature (Total Device) DS30296 Rev. 7 - 2 5 of 7 www.diodes.com CTA2P1N 2N7002 Section 1.0 VGS = 10V 9.0V 8.0V 7.0V 6.5V 6.0V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0/1.0V 7 Tj = 25° C NEW PRODUCT 6 5 5.5V VGS = 5.0V 0.8 ID, DRAIN-SOURCE CURRENT (A) 0.6 4 5.0V 3 0.4 VGS = 10V 2 0.2 1 0 0 0 1 2 3 4 5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 8 On-Region Characteristics (2N7002) 0 0.2 0.4 0.6 0.8 1.0 ID, DRAIN CURRENT (A) Fig. 9 On-Resistance vs Drain Current (2N7002) 6 3.0 5 2.5 4 ID = 50mA ID = 500mA 2.0 3 2 1.5 VGS = 10V, ID = 200mA 1 1.0 -55 -30 -5 20 45 70 95 120 145 0 0 2 4 6 8 10 12 14 16 18 Tj, JUNCTION TEMPERATURE (° C) Fig. 10 On-Resistance vs Junction Temperature (2N7002) VGS, GATE TO SOURCE VOLTAGE (V) Fig. 11 On-Resistance vs. Gate-Source Voltage (2N7002) 10 VGS, GATE SOURCE VOLTAGE (V) 9 8 7 6 5 4 3 2 1 0 0 0.2 0.4 TA = -55°C TA = +25°C TA = +125°C TA = +75°C VDS = 10V 0.6 0.8 1 ID, DRAIN CURRENT (A) Fig. 12 Typical Transfer Characteristics (2N7002) DS30296 Rev. 7 - 2 6 of 7 www.diodes.com CTA2P1N IMPORTANT NOTICE Diodes, Inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhancements, improvements, or other changes. Diodes, Inc. does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT The products located on our website at www.diodes.com are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the expressed written approval of Diodes Incorporated. DS30296 Rev. 7 - 2 7 of 7 www.diodes.com CTA2P1N ã Diodes Incorporated