2N4403

2N4401 & 2N4403 General Purpose Switching Transistors Features: • NPN/PNP Silicon Planar Epitaxial Transistors. • General purpose Switching Applications. • 2N 4401 Type NPN. • 2N 4403 Type PNP. 2N4401 NPN TO-92 2N4403 PNP Dimensions A B C D E F G H K L 1.14 12.70 1.982 Minimum 4.32 4.45 3.18 0.41 0.35 5° 1.40 1.53 2.082 Dimensions : Millimetres Maximum 5.33 5.20 4.19 0.55 0.50 Pin Configuration 1 = Emitter 2 = Base 3 = Collector Page 1 31/05/05 V1.0 2N4401 & 2N4403 General Purpose Switching Transistors Absolute Maximum Ratings Parameters Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation at Ta = 25°C Derate above 25°C Power Dissipation at TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Resistance Junction to Case Junction to Ambient Rth(j-c) Rth(j-a) 83.3 °C/W 200 Symbol VCEO VCBO VEBO IC 2N4401 40 40 60 6 600 625 5.0 1.5 12 -55 to +150 5 mA mW mW/°C W W/°C °C V 2N4403 Unit PD Tj, Tstg Electrical Characteristics (Ta = 25°C unless otherwise specified) Parameters Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Base Cut off Current Collector Cut off Current Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Symbol BVCEO* BVCBO BVEBO IBEV ICEX VCE(Sat)* VBE(Sat) * Test Condition IC = 1mA, IB = 0 IC = 100µA, IE = 0 IE = 100µA, IC = 0 VCE = 35V, VEB = 0.4V VCE = 35V, VEB = 0.4V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA IC = 0.1mA, VCE = 1V IC = 1mA, VCE = 1V IC = 10mA, VCE = 1V IC = 150mA, VCE = 1V* IC = 150mA, VCE = 2V* IC = 500mA, VCE = 2V* IC = 1mA, VCE = 10V, f = 1kHz IC = 1mA, VCE = 10V, f = 1kHz 2N4401 >40 >60 >6 40 2N4403 >40 >5 20 µA Unit V V DC Current Gain hFE - Dynamic Characteristics Small Signal Current Gain Input Impedance *Pulse Test : Pulse Width: ≤300µs, Duty ≤2.0% hfe hie 40 - 500 1.0 - 15 60 - 500 1.5 - 15 kΩ Page 2 31/05/05 V1.0 2N4401 & 2N4403 General Purpose Switching Transistors Electrical Characteristics (Ta = 25°C unless otherwise specified) Parameters Voltage Feedback Ratio Output Impedance Collector-Base Capacitance Emitter-Base Capacitance Transition Frequency Switching Characteristics Delay Time Rise Time Storage time Fall Time td tr ts tf VCC = 30V, VEB = 2V IC = 150mA, IB1 = 15mA VCC = 30V, IC = 150mA IB1 = IB2 = 15mA