BFP650FH6327XTSA1

BFP650F Low profile linear silicon NPN RF bipolar transistor Product description The BFP650F is a RF bipolar transistor based on SiGe:C technology that is part of Infineon’s established sixth generation transistor family. Its transition frequency fT of 42 GHz along with its linearity characteristics make the device suitable for oscillators. It remains cost competitive without compromising on ease of use. Feature list • • • Minimum noise figure NFmin = 0.8 dB at 1.8 GHz, 3 V, 10 mA High gain Gma = 21.5 dB at 1.8 GHz, 3 V, 80 mA OIP3 = 31 dBm at 1.8 GHz, 3 V, 80 mA Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications • • • Low noise, high linearity amplifiers in SDARS receivers Low noise, high linearity amplifiers for ISM band applications Low noise, high linearity amplifiers for multimedia applications such as CATV Device information Table 1 Part information Product name / Ordering code Package Pin configuration BFP650F / BFP650FH6327XTSA1 TSFP-4-1 1=B 2=E 3=C 4=E Marking Pieces / Reel R5s 3000 Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document Revision 2.0 2019-01-25 BFP650F Low profile linear silicon NPN RF bipolar transistor Table of contents Table of contents Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Feature list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Device information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 2 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 3.1 3.2 3.3 3.4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 General AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Frequency dependent AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 Characteristic AC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 4 Package information TSFP-4-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Datasheet 2 Revision 2.0 2019-01-25 BFP650F Low profile linear silicon NPN RF bipolar transistor Absolute maximum ratings 1 Absolute maximum ratings Table 2 Absolute maximum ratings at TA = 25 °C (unless otherwise specified) Parameter Symbol Values Min. Collector emitter voltage VCEO – Unit Note or test condition V Open base Max. 4.0 3.7 TA = -55 °C, open base Collector emitter voltage VCES 13 E-B short circuited Collector base voltage VCBO 13 Open emitter Emitter base voltage VEBO 1.2 Open collector Base current IB 10 Collector current IC 150 Total power dissipation 1) Ptot Junction temperature TJ Storage temperature TStg mA – 500 mW TS ≤ 85 °C 150 °C – -55 Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Exceeding only one of these values may cause irreversible damage to the integrated circuit. 1 TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the PCB. Datasheet 3 Revision 2.0 2019-01-25 BFP650F Low profile linear silicon NPN RF bipolar transistor Thermal characteristics 2 Thermal characteristics Table 3 Thermal resistance Parameter Symbol Junction - soldering point Values RthJS Min. Typ. Max. – 130 – Unit Note or test condition K/W – 550 500 450 400 Ptot [mW] 350 300 250 200 150 100 50 0 0 15 30 45 60 75 90 105 120 135 150 T [°C] S Figure 1 Datasheet Total power dissipation Ptot = f(Ts) 4 Revision 2.0 2019-01-25 BFP650F Low profile linear silicon NPN RF bipolar transistor Electrical characteristics 3 Electrical characteristics 3.1 DC characteristics Table 4 DC characteristics at TA = 25 °C Parameter Symbol Values Min. Typ. Max. Unit Note or test condition V IC = 3 mA, IB = 0, open base Collector emitter breakdown voltage V(BR)CEO 4 4.5 – Collector emitter leakage current ICES – – 100 2) μA VCE = 13 V, VBE = 0, E-B short circuited Collector base leakage current ICBO 100 2) nA VCB = 5 V, IE = 0, open emitter Emitter base leakage current IEBO 10 2) VEB = 0.5 V, IC = 0, open collector DC current gain hFE 110 3.2 General AC characteristics Table 5 General AC characteristics at TA = 25 °C Parameter Symbol 180 μA 270 Values Min. Typ. Max. – 42 – VCE = 3 V, IC = 80 mA, pulse measured Unit Note or test condition GHz VCE = 3 V, IC = 80 mA, f = 1 GHz pF VCB = 3 V, VBE = 0, f = 1 MHz, emitter grounded Transition frequency fT Collector base capacitance CCB 0.26 Collector emitter capacitance CCE 0.45 VCE = 3 V, VBE = 0, f = 1 MHz, base grounded Emitter base capacitance CEB 1.3 VEB = 0.5 V, VCB = 0, f = 1 MHz, collector grounded 2 Maximum values not limited by the device but by the short cycle time of the 100% test. Datasheet 5 Revision 2.0 2019-01-25 BFP650F Low profile linear silicon NPN RF bipolar transistor Electrical characteristics 3.3 Frequency dependent AC characteristics Measurement setup is a test fixture with Bias-T’s in a 50 Ω system, TA = 25 °C. VC Top View Bias-T OUT C E VB B Bias-T E (Pin 1) IN Figure 2 Testing circuit Table 6 AC characteristics, VCE = 3 V, f = 1.8 GHz Parameter Symbol Values Min. Power gain • Maximum power gain • Transducer gain Noise figure • Minimum noise figure Gms |S21|2 NFmin – 15 – Linearity OIP3 • 3rd order intercept point at output • 1 dB gain compression point at output OP1dB Table 7 Max. – dB 0.8 IC = 80 mA IC = 10 mA dBm 31 17.5 Symbol Values Min. Power gain • Maximum power gain • Transducer gain Gms |S21|2 Noise figure • Minimum noise figure NFmin Datasheet 21.5 17.5 Note or test condition IC = 80 mA, ZS = ZL = 50 Ω AC characteristics, VCE = 3 V, f = 6 GHz Parameter Note: Typ. Unit – Typ. 11 7.5 1.9 Unit Note or test condition Max. – dB IC = 80 mA IC = 10 mA Gms = IS21 / S12I for k < 1; Gma = IS21 / S12 I(k-(k2-1)1/2) for k > 1. In order to get the NFmin values stated in this chapter, the test fixture losses have been subtracted from all measured results. OIP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50 Ω from 0.2 MHz to 12 GHz. 6 Revision 2.0 2019-01-25 BFP650F Low profile linear silicon NPN RF bipolar transistor Electrical characteristics 3.4 Characteristic AC diagrams 45 40 35 3.00V 25 T f [GHz] 30 20 2.00V 15 10 5 1.00V 0.50V 0 0 20 40 60 80 100 120 140 160 180 I [mA] C Figure 3 Transition frequency fT = f(IC), f = 1 GHz, VCE = parameter 0.8 0.7 0.6 cb C [pF] 0.5 0.4 0.3 0.2 0.1 0 Figure 4 Datasheet 0 1 2 3 4 5 6 7 8 9 10 Collector base capacitance CCB = f(VCB), f = 1 MHz 7 Revision 2.0 2019-01-25 BFP650F Low profile linear silicon NPN RF bipolar transistor Electrical characteristics 50 45 40 35 G ms G [dB] 30 25 20 G 2 |S | 21 ma 15 10 5 0 0 1 2 3 4 5 6 f [GHz] Figure 5 Gain Gma, Gms, IS21I2 = f(f), VCE = 3 V, IC = 80 mA 30 28 0.90GHz 26 24 22 1.80GHz G [dB] 20 18 2.40GHz 16 3.00GHz 14 4.00GHz 12 5.00GHz 6.00GHz 10 8 6 0 20 40 60 80 100 120 140 160 180 200 I [mA] C Figure 6 Datasheet Maximum power gain Gmax = f(IC), VCE = 3 V, f = parameter in GHz 8 Revision 2.0 2019-01-25 BFP650F Low profile linear silicon NPN RF bipolar transistor Electrical characteristics 30 0.90GHz 25 1.80GHz 20 2.40GHz G [dB] 3.00GHz 15 4.00GHz 5.00GHz 6.00GHz 10 5 0 0 Figure 7 Note: Datasheet 0.5 1 1.5 2 2.5 3 V [V] CE 3.5 4 4.5 5 5.5 Maximum power gain Gmax = f(VCE), IC = 80 mA, f = parameter in GHz The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. TA = 25 °C. 9 Revision 2.0 2019-01-25 BFP650F Low profile linear silicon NPN RF bipolar transistor Package information TSFP-4-1 4 Package information TSFP-4-1 Figure 8 Package outline Figure 9 Foot print Figure 10 Marking layout example Figure 11 Tape dimensions Datasheet 10 Revision 2.0 2019-01-25 BFP650F Low profile linear silicon NPN RF bipolar transistor Revision history Revision history Document version Date of release Description of changes Revision 2.0 2019-01-25 New datasheet layout. Datasheet 11 Revision 2.0 2019-01-25 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2019-01-25 Published by Infineon Technologies AG 81726 Munich, Germany © 2019 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-bts1525792198227 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury