BFP405FH6327XTSA1

BFP405F Low Noise Silicon Bipolar RF Transistor • For low current applications 3 • Minimum noise figure NFmin = 1.25 dB at 1.8 GHz 2 4 1 Outstanding G ms = 22.5 dB at 1.8 GHz • Transition frequency fT = 25 GHz • Pb-free (RoHS compliant) and halogen-free thin small flat package (1.4 x 0.8 x 0.59 mm) with visible leads • Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFP405F Marking ALs 1=B Pin Configuration 2=E 3=C 4=E - Package - TSFP-4 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Collector-emitter voltage VCEO Value Unit V TA = 25 °C 4.5 TA = -55 °C 4.1 Collector-emitter voltage VCES 15 Collector-base voltage VCBO 15 Emitter-base voltage VEBO 1.5 Collector current IC 25 Base current IB 3 Total power dissipation1) Ptot 75 mW Junction temperature TJ 150 °C Storage temperature TStg mA TS ≤ 112 °C 1T S is -55 ... 150 measured on the emitter lead at the soldering point to the pcb Thermal Resistance Parameter Symbol Junction - soldering point1) RthJS 1 Value Unit 500 K/W 2013-09-19 BFP405F Electrical Characteristics at T A = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)CEO 4 5 - V ICES - - 10 μA ICBO - - 100 nA IEBO - - 1 μA hFE 60 95 130 DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, I B = 0 Collector-emitter cutoff current VCE = 15 V, VBE = 0 Collector-base cutoff current VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 0.5 V, IC = 0 DC current gain - IC = 5 mA, VCE = 4 V, pulse measured 1For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) 2 2013-09-19 BFP405F Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. 18 25 - Ccb - 0.05 0.1 Cce - 0.2 - Ceb - 0.25 - NFmin - 1.25 - dB Gms - 22.5 - dB |S21|2 - 18 - IP3 - 14 - P-1dB - 0 - AC Characteristics (verified by random sampling) Transition frequency fT GHz IC = 10 mA, VCE = 3 V, f = 2 GHz Collector-base capacitance pF VCB = 2 V, f = 1 MHz, VBE = 0 , emitter grounded Collector emitter capacitance VCE = 2 V, f = 1 MHz, VBE = 0 , base grounded Emitter-base capacitance VEB = 0.5 V, f = 1 MHz, VCB = 0 , collector grounded Minimum noise figure IC = 2 mA, VCE = 2 V, f = 1.8 GHz, ZS = ZSopt Power gain, maximum stable1) IC = 5 mA, VCE = 2 V, ZS = ZSopt , ZL = ZLopt , f = 1.8 GHz Insertion power gain VCE = 2 V, IC = 5 mA, f = 1.8 GHz, ZS = ZL = 50 Ω Third order intercept point at output2) dBm VCE = 2 V, IC = 5 mA, f = 1.8 GHz, ZS = ZL = 50 Ω 1dB compression point at output IC = 5 mA, VCE = 2 V, ZS = ZL = 50 Ω, f = 1.8 GHz 1G ms = |S 21 / S12 | 2IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz 3 2013-09-19 BFP405F Total power dissipation P tot = ƒ(TS) 90 mW Ptot 70 60 50 40 30 20 10 0 0 30 60 90 °C 150 TS 4 2013-09-19 Package TSFP-4 5 BFP405F 2013-09-19 BFP405F Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany ¤ 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 6 2013-09-19