ESD113B102ELSE6327XTSA1

TVS Diodes Transient Voltage Suppressor Diodes ESD105-B1-02 Series Low Capacitance & Low Clamping Bi-directional ESD / Transient Protection Diodes ESD105-B1-02ELS ESD105-B1-02EL Data Sheet Revision 1.0, 2013-12-12 Final Power Management & Multimarket ESD105-B1-02 Series Revision History: Rev. 04, 2013-09-24 Page or Item Subjects (major changes since previous revision) Revision 1.0, 2013-12-12 All Status change to Final Trademarks of Infineon Technologies AG AURIX™, BlueMoon™, COMNEON™, C166™, CROSSAVE™, CanPAK™, CIPOS™, CoolMOS™, CoolSET™, CORECONTROL™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, EUPEC™, FCOS™, HITFET™, HybridPACK™, ISOFACE™, I²RF™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PROFET™, PRO-SIL™, PRIMARION™, PrimePACK™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SMARTi™, SmartLEWIS™, TEMPFET™, thinQ!™, TriCore™, TRENCHSTOP™, X-GOLD™, XMM™, X-PMU™, XPOSYS™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, PRIMECELL™, REALVIEW™, THUMB™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Sattelite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2010-06-09 Final Data Sheet 2 Revision 1.0, 2013-12-12 ESD105-B1-02 Series Low Capacitance & Low Clamping Bi-directional ESD / Transient Protection 1 Low Capacitance & Low Clamping Bi-directional ESD / Transient Protection Diodes 1.1 Features • • • • • • ESD / Transient protection of signal lines exceeding standard: – IEC61000-4-2 (ESD): ±30 kV air / ±25 kV contact discharge – IEC61000-4-4 (EFT): ±50 A (5/50 ns) – IEC61000-4-5 (Surge): ±5 A (8/20 μs) One-line diode with ultra-small form factor down to 0.62 x 0.32 x 0.31 mm² (0201) package size Bi-directional, symmetrical working voltage up to: VRWM = ±5.5 V Low capacitance CL = 0.3 pF (typical) Very low clamping voltage, low dynamic resistance: RDYN = 0.36 Ω (typ.) Pb-free package (RoHS compliant) and halogen free package 1.2 • • Application Examples USB 3.0. 10/100/1000 Ethernet, Firewire, DVI, HDMI, S-ATA, Display Ports Mobile HDMI Link, MDDI, MIPI, SWP, NFC 1.3 Product Description Pin 1 Pin 2 Pin 1 marking (lasered) Pin 1 TSLP-2 Pin 1 Pin 2 Pin 2 TSSLP-2 a) Pin configuration b) Schematic diagram P G-TS (S)LP -2_Dual_Diode_S erie_P inConf_and_S c hematic Diag. v s d Figure 1 Pin configuration and Schematic diagram Table 1 Ordering Information Type Package Configuration Marking code ESD105-B1-02ELS TSSLP-2-4 1 line, bi-directional N ESD105-B1-02EL TSLP-2-20 1 line, bi-directional N Final Data Sheet 3 Revision 1.0, 2013-12-12 ESD105-B1-02 Series Characteristics 2 Characteristics Table 2 Maximum Ratings at TA = 25 °C, unless otherwise specified 1) Parameter Symbol 2) ESD air discharge contact discharge Unit Min. Typ. Max. – – – – 30 25 – – 5 – – 70 kV VESD Peak pulse current (tp = 8 / 20 μs)3) IPP Peak pulse power tp = 8 / 20 μs Values 3) A W PPK Operating temperature TOP -55 – 125 °C Storage temperature Tstg -65 – 150 °C 1) Device is electrically symmetrical 2) VESD according to IEC61000-4-2 3) IPP according to IEC61000-4-5 Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. 2.1 Electrical Characteristics at TA = 25 °C, unless otherwise specified   

  
  
      
 





 
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                 !"#   Definitions of electrical characteristics Final Data Sheet 4 Revision 1.0, 2013-12-12 ESD105-B1-02 Series Characteristics Table 3 DC Characteristics at TA = 25 °C, unless otherwise specified 1) Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Reverse working voltage VRWM – – 5.5 V Reverse current IR –