ESD204B102ELSE6327XTSA1 数据手册
TVS Diodes
Transient Voltage Suppressor Diodes
ESD204-B1-02 Series
Bi-directional Low Capacitance TVS Diode
ESD204-B1-02ELS
ESD204-B1-02EL
Data Sheet
Revision 1.2, 2013-05-17
Final
Power Management & Multimarket
Edition 2013-05-17
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
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ESD204-B1-02 Series
Revision History: Rev. 1.1, 2013-02-06
Page or Item
Subjects (major changes since previous revision)
Revision 1.2, 2013-05-17
New type ESD204-B1-02EL inserted
Trademarks of Infineon Technologies AG
AURIX™, BlueMoon™, COMNEON™, C166™, CROSSAVE™, CanPAK™, CIPOS™, CoolMOS™, CoolSET™,
CORECONTROL™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™,
EiceDRIVER™, EUPEC™, FCOS™, HITFET™, HybridPACK™, ISOFACE™, I²RF™, IsoPACK™, MIPAQ™,
ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PROFET™, PRO-SIL™,
PRIMARION™, PrimePACK™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SMARTi™,
SmartLEWIS™, TEMPFET™, thinQ!™, TriCore™, TRENCHSTOP™, X-GOLD™, XMM™, X-PMU™,
XPOSYS™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, PRIMECELL™,
REALVIEW™, THUMB™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership.
Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation
Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation.
FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of
Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of
INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of
Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP.
MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA
MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of
OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF
Micro Devices, Inc. SIRIUS™ of Sirius Sattelite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™
of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™
of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas
Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes
Zetex Limited.
Last Trademarks Update 2010-06-09
Final Data Sheet
3
Revision 1.2, 2013-05-17
ESD204-B1-02 Series
Bi-directional Low Capacitance TVS Diode
1
Bi-directional Low Capacitance TVS Diode
1.1
Features
•
•
•
•
ESD / Transient protection of data lines in 3.3 / 5 / 12 V applications according to :
– IEC61000-4-2 (ESD) : ±20 kV (air) and ±18 kV (contact)
– IEC61000-4-4 (EFT) : ±40 A (5/50ns)
Maximum working voltage: VRWM = -8 / +14 V
Very low reverse current: IR < 1 nA (typical)
Low capacitance CL = 4 pF I/O to GND (typical)
1.2
•
•
•
Application Examples
Keypad, touchpad, buttons, convenience keys
LCD displays, Camera, audio lines, mobile communication, Consumer products (E-Book, MP3, DVD, DSC, ...)
Notebooks tablets and desktop computers and their peripherals
1.3
Product Description
Pin 1 marking
(lasered)
Pin 1
Pin 1
Pin 2
Pin 2
a) Pin configuration
b) Schematic diagram
P G-TS LP-2_Dual_Diode_S erie_P inConf_and_S chematicDiag. vsd
Figure 1
a) Pin Configuration and b) Schematic Diagram
Table 1
Ordering information
Type
Package
Configuration
Marking code
ESD204-B1-02ELS
TSSLP-2-3
1 line, bi-directional
D
ESD204-B1-02EL1)
TSLP-2-19
1 line, bi-directional
RR
1) Product not avialalble yet, target data
Final Data Sheet
4
Revision 1.2, 2013-05-17
ESD204-B1-02 Series
Characteristics
2
Characteristics
Table 2
Maximum Rating at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
VESD
-20
–
20
kV
VESD
-18
–
18
kV
IPP
-1
–
1
A
Operating temperature
TOP
-55
–
150
°C
Storage temperage
1) VESD according to IEC61000-4-2
2) IPP according to IEC61000-4-5
Tstg
-65
–
150
°C
ESD air discharge
1)
ESD contact discharge
1)
Peak pulse current (tp = 8/20 µs)
2)
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
2.1
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Figure 2
!
!
!
Definitions of electrical characteristics
Final Data Sheet
5
Revision 1.2, 2013-05-17
ESD204-B1-02 Series
Characteristics
Table 3
DC characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Reverse working voltage VRWM
Breakdown voltage
VBR
Values
Unit
Note /
Test Condition
Min.
Typ.
Max.
-8
–
14
V
from Pin2 to Pin1
8.5
11
14
V
IR = 1 mA,
from Pin1 to Pin2
Breakdown voltage
VBR
14.5
17
20
V
IR = 1 mA,
from Pin2 to Pin1
IR
Reverse current
Table 4
–