ESD208B102ELE6327XTMA1

TVS Diode Transient Voltage Suppressor Diodes ESD208-B1-02 Series Ultra Low Clamping ESD / Transient Protection Diode ESD208-B1-02EL ESD208-B1-02ELS Data Sheet Revision 1.2, 2013-11-29 Final Power Management & Multimarket ESD208-B1-02 Series Revision History Revision 1.1, 2013-11-26 Page or Item Subjects (major changes since previous revision) Revision 1.2, 2013-11-29 5 Update of Table 2-2) Trademarks of Infineon Technologies AG AURIX™, BlueMoon™, C166™, CanPAK™, CIPOS™, CIPURSE™, COMNEON™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SMARTi™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™, X-GOLD™, X-PMU™, XMM™, XPOSYS™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2010-10-26 Final Data Sheet 2 Revision 1.2, 2013-11-29 ESD208-B1-02 Series Ultra Low Clamping ESD / Transient Protection Diode 1 Ultra Low Clamping ESD / Transient Protection Diode 1.1 Features • • • • • ESD / transient protection of signal lines in low voltage applications according to: – IEC61000-4-2 (ESD): ±30 kV air discharge, ±25 kV contact discharge – IEC61000-4-4 (EFT): ±80 A / ±4 kV (5/50 ns) – IEC61000-4-5 (Surge): ±4 A (8/20 µs) Bi-directional, symmetrical working voltage up to VRWM = ±3.3 V Low capacitance: CL = 6 pF (typical) Very low clamping voltage due to extremely low dynamic resistance down to: RDYN = 0.2 Ω (typical) Pb-free (RoHS compliant) and halogen free package, very small form factor down to: 0.62 x 0.32 x 0.31 mm3 1.2 • • • Application Examples Keypad, touchpad, buttons, convenience keys LCD displays, Camera, audio lines, mobile communication, Consumer products (E-Book, MP3, DVD, DSC...) Notebooks tablets and desktop computers and their peripherals 1.3 Product Description Pin 1 Pin 2 Pin 1 marking (lasered) Pin 1 TSLP-2 Pin 1 Pin 2 Pin 2 TSSLP-2 a) Pin configuration b) Schematic diagram P G-TS (S)LP -2_Dual_Diode_S erie_P inConf_and_S c hematic Diag. v s d Figure 1-1 Pin Configuration and Schematic Diagram Table 1-1 Ordering Information Type Package Configuration Marking code ESD208-B1-02EL TSLP-2-19 1 line, bi-directional C ESD208-B1-02ELS TSSLP-2-3 1 line, bi-directional C Final Data Sheet 3 Revision 1.2, 2013-11-29 ESD208-B1-02 Series Characteristics 2 Characteristics Table 2-1 Maximum Ratings at TA = 25 °C, unless otherwise specified 1) Parameter Symbol Values Unit Min. Typ. Max. – – – – 30 25 IPP – – 4 A Peak pulse power (tp = 8/20 μs) PPK – – 30 W Operating temperature range TOP -55 – 125 °C Storage temperature Tstg -65 – 150 °C ESD discharge air contact 2) kV VESD Peak pulse current (tp = 8/20 μs)3) 3) 1) Device is electrically symmetrical 2) VESD according to IEC61000-4-2 (R = 330 Ω, C = 150 pF) 3) IPP according to IEC61000-4-5 (tp = 8/20 μs) Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. 2.1 Electrical Characteristics at TA = 25 °C, unless otherwise specified   

 
   

      




 

 

  

 





             



         
                 !"#   Figure 2-1 Definitions of electrical characteristics Final Data Sheet 4 Revision 1.2, 2013-11-29 ESD208-B1-02 Series Characteristics Table 2-2 DC Characteristics at TA = 25 °C, unless otherwise specified 1) Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Reverse working voltage VRWM – – 3.3 V Reverse current IR –