ESD8V0R1B02ELE6327XTMA1

TVS Diodes Transient Voltage Suppressor Diodes ESD8V0R1B Series Bi-directional Low Capacitance TVS Diode ESD8V0R1B-02EL ESD8V0R1B-02ELS Data Sheet Revision 2.0, 2010-12-15 Final Industrial and Multi-Market Edition 2010-12-15 Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. ESD8V0R1B Series Revision History Page or Item Subjects (major changes since previous revision) Revision 1.0, 2010-10-20 Revision 2.0, 2010-12-15 Carrier Tape drawing for TSSLP-2-2 Package updated Trademarks of Infineon Technologies AG AURIX™, BlueMoon™, COMNEON™, C166™, CROSSAVE™, CanPAK™, CIPOS™, CoolMOS™, CoolSET™, CORECONTROL™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, EUPEC™, FCOS™, HITFET™, HybridPACK™, ISOFACE™, I²RF™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PROFET™, PRO-SIL™, PRIMARION™, PrimePACK™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SMARTi™, SmartLEWIS™, TEMPFET™, thinQ!™, TriCore™, TRENCHSTOP™, X-GOLD™, XMM™, X-PMU™, XPOSYS™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, PRIMECELL™, REALVIEW™, THUMB™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Sattelite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2010-06-09 Final Data Sheet 3 Revision 2.0, 2010-12-15 ESD8V0R1B Series Table of Contents Table of Contents Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1 1.1 1.2 Bi-directional Low Capacitance TVS Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Application Examples . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2 Product Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 3.1 3.2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Electrical Characteristics at TA = 25 °C, unless otherwise specified . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Typical Performance characteristics at TA = 25 °C, unless otherwise specified . . . . . . . . . . . . . . . . 10 4 Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5 Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 6 6.1 6.2 Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 PG-TSLP-2-18 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 PG-TSSLP-2-2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Terminology . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Final Data Sheet 4 Revision 2.0, 2010-12-15 ESD8V0R1B Series List of Figures List of Figures Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6 Figure 7 Figure 8 Figure 9 Figure 10 Figure 11 Figure 12 Figure 13 Figure 14 Figure 15 Figure 16 a) Pin Configuration and b) Schematic Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Definitions of electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Non-repetitive peak pulse power: Ppk = f (tp) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Power derating curve: Ppk = f (TA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Reverse characteristic, IR = (VR), TA = parameter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Line capacitance CL = f(VR) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 1 Line, bi-directional protection with ESD diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Ordering Information Scheme (examples) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 PG-TSLP-2-18: Package Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 PG-TSLP-2-18: Footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 PG-TSLP-2-18: Packing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 PG-TSLP-2-18: Marking (example) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 PG-TSSLP-2-2: Package Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 PG-TSSLP-2-2: Footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 PG-TSSLP-2-2: Packing. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 PG-TSSLP-2-2: Marking (example) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Final Data Sheet 5 Revision 2.0, 2010-12-15 ESD8V0R1B Series List of Tables List of Tables Table 1 Table 2 Table 3 Table 4 Table 5 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Maximum Rating at TA = 25 °C, unless otherwise specified. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . DC characteristics at TA = 25 °C, unless otherwise specified . . . . . . . . . . . . . . . . . . . . . . . . . . . . . RF characteristics at TA = 25 °C, unless otherwise specified . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ESD characteristics at TA = 25 °C, unless otherwise specified . . . . . . . . . . . . . . . . . . . . . . . . . . . . Final Data Sheet 6 7 8 8 9 9 Revision 2.0, 2010-12-15 ESD8V0R1B Series Bi-directional Low Capacitance TVS Diode 1 Bi-directional Low Capacitance TVS Diode 1.1 Features • • • • • • • ESD / Transient protection of data lines in 3.3 / 5 / 12 V applications according to : • IEC61000-4-2 (ESD) : ±20 kV (air) and ±18 kV (contact) • IEC61000-4-4 (EFT) : 40 A (5/50ns) Extremely small form factor down to 0.62 x 0.32 x 0.31 mm² Maximum working voltage: VRWM = -8 / +14 V Very low reverse current: IR < 1 nA (typical) Very low series inducttance down to : LS = 0.2 nH (typical) Low capacitance CL = 4 pF I/O to GND (typical) Pb-free and Halogen-Free package (RoHS compliant) 1.2 • • • Application Examples Keypad, touchpad, buttons, convenience keys LCD displays, Camera, audio lines, mobile communication, Consumer products (E-Book, MP3, DVD, DSC, ...) Notebooks tablets and desktop computers and their peripherals 2 Product Description Pin 1 Pin 2 Pin 2 TSLP-2 Pin 1 Pin 2 Pin 1 TSSLP -2 b) Schematic diagram a) Pin configuration Figure 1 a) Pin Configuration and b) Schematic Diagram Table 1 Ordering information Type Package Configuration ESD8V0R1B-02EL PG-TSLP-2-18 1 line, bi-directional R ESD8V0R1B-02ELS PG-TSSLP-2-2 1 line, bi-directional D Final Data Sheet 7 Marking code Revision 2.0, 2010-12-15 ESD8V0R1B Series Characteristics 3 Characteristics Table 2 Maximum Rating at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit Min. Typ. Max. VESD -20 – 20 kV VESD -18 – 18 kV IPP -1 – 1 A Operating temperature TOP -55 – 150 °C Storage temperage 1) VESD according to IEC61000-4-2 2) IPP according to IEC61000-4-5 Tstg -65 – 150 °C ESD air discharge 1) ESD contact discharge 1) Peak pulse current (tp = 8/20 μs) 3.1 2) Electrical Characteristics at TA = 25 °C, unless otherwise specified Rdyn … Differential series resistance VBR … Breakdown voltage ( I BR = 1mA typ.) I VRWM … Reverse working voltage maximum IPP VCL … Clamping voltage IPP … Peak pulse current (t P=8/20μs typ.) Rdyn IBR VCL V BR IRWM VRWM VRWM IRWM IBR VBR VCL V Pin 2 Rdyn IPP V I Pin 1 Diode_Characteristic_Curve_bidirectional .vsd Figure 2 Definitions of electrical characteristics Table 3 DC characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Reverse working voltage VRWM -8 – 14 V from Pin2 to Pin1 Breakdown voltage 8.5 11 14 V IR = 1 mA, VBR from Pin1 to Pin2 Breakdown voltage VBR 14.5 17 20 V IR = 1 mA, from Pin2 to Pin1 Reverse current Final Data Sheet IR – 10pF), Low (