FP200R12N3T7_B11
EconoPIM™3 module
Preliminary datasheet
EconoPIM™3 module with TRENCHSTOP™IGBT7 and Emitter Controlled 7 diode and NTC
Features
• Electrical features
- VCES = 1200 V
- IC nom = 200 A / ICRM = 400 A
- TRENCHSTOPTM IGBT7
- Overload operation up to 175°C
- Low VCEsat
• Mechanical features
- Integrated NTC temperature sensor
- PressFIT contact technology
- Copper base plate
- Al2O3 substrate with low thermal resistance
Potential applications
• Auxiliary inverters
• Motor drives
• Servo drives
Product validation
• Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068
Description
Datasheet
www.infineon.com
Please read the Important Notice and Warnings at the end of this document
0.10
2021-08-26
FP200R12N3T7_B11
EconoPIM™3 module
Table of contents
Table of contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1
Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
IGBT, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
3
Diode, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4
Diode, Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
5
IGBT, Brake-Chopper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
6
Diode, Brake-Chopper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
7
NTC-Thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
8
Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
9
Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
10
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Datasheet
2
0.10
2021-08-26
FP200R12N3T7_B11
EconoPIM™3 module
1 Package
1
Package
Table 1
Insulation coordination
Parameter
Symbol Note or test condition
Isolation test voltage
VISOL
RMS, f = 50 Hz, t = 1 min
Material of module
baseplate
Values
Unit
2.5
kV
Cu
Internal Isolation
basic insulation (class 1, IEC 61140)
Al2O3
Creepage distance
dCreep
terminal to heatsink
10.0
mm
Clearance
dClear
terminal to heatsink
7.5
mm
Comparative tracking index
CTI
RTI Elec.
RTI
Table 2
> 200
housing
140
°C
Values
Unit
Characteristic values
Parameter
Symbol Note or test condition
Min.
Stray inductance module
LsCE
Typ.
Max.
25
nH
Module lead resistance,
terminals - chip
RAA'+CC'
TC=25°C, per switch
1.1
mΩ
Module lead resistance,
terminals - chip
RCC'+EE'
TC=25°C, per switch
1.6
mΩ
Storage temperature
Tstg
Mounting torque for modul
mounting
M
Weight
G
Note:
2
Table 3
125
°C
3
6
Nm
- Mounting according to M5, Screw
valid application note
300
g
Values
Unit
Tvj = 25 °C
1200
V
TC = 70 °C
200
A
400
A
±20
V
The current under continuous operation is limited to 50A rms per connector pin.
IGBT, Inverter
Maximum rated values
Parameter
Symbol Note or test condition
Collector-emitter voltage
VCES
Continous DC collector
current
ICDC
Tvj max = 175 °C
Repetitive peak collector
current
ICRM
tP = 1 ms
Gate-emitter peak voltage
VGES
Datasheet
-40
3
0.10
2021-08-26
FP200R12N3T7_B11
EconoPIM™3 module
2 IGBT, Inverter
Table 4
Characteristic values
Parameter
Symbol Note or test condition
Values
Min.
Collector-emitter saturation
voltage
Gate threshold voltage
Gate charge
VCE sat
VGEth
QG
IC = 200 A, VGE = 15 V
Unit
Typ.
Max.
Tvj = 25 °C
1.55
TBD
V
Tvj = 125 °C
1.69
Tvj = 175 °C
1.77
6.45
V
IC = 4.6 mA, VCE = VGE, Tvj = 25 °C
5.15
5.80
VGE = ±15 V, VCE = 600 V
3.34
µC
Internal gate resistor
RGint
Tvj = 25 °C
0.75
Ω
Input capacitance
Cies
f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V
40.3
nF
Reverse transfer capacitance
Cres
f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V
0.14
nF
Collector-emitter cut-off
current
ICES
VCE = 1200 V, VGE = 0 V
Gate-emitter leakage current
IGES
VCE = 0 V, VGE = 20 V, Tvj = 25 °C
Turn-on delay time
(inductive load)
tdon
IC = 200 A, VCE = 600 V,
VGE = ±15 V, RGon = 2.7 Ω
Rise time (inductive load)
Turn-off delay time
(inductive load)
Fall time (inductive load)
Turn-on energy loss per
pulse
Turn-off energy loss per
pulse
SC data
Datasheet
tr
tdoff
tf
Eon
Eoff
ISC
Tvj = 25 °C
Tvj = 25 °C
0.203
Tvj = 125 °C
0.226
Tvj = 175 °C
0.239
Tvj = 25 °C
0.094
Tvj = 125 °C
0.097
Tvj = 175 °C
0.099
Tvj = 25 °C
0.351
Tvj = 125 °C
0.414
Tvj = 175 °C
0.433
Tvj = 25 °C
0.103
Tvj = 125 °C
0.198
Tvj = 175 °C
0.262
IC = 200 A, VCE = 600 V,
Lσ = 35 nH, VGE = ±15 V,
RGon = 2.7 Ω, di/dt =
2050 A/µs (Tvj = 175 °C)
Tvj = 25 °C
25.1
Tvj = 125 °C
38.3
Tvj = 175 °C
45.9
IC = 200 A, VCE = 600 V,
Lσ = 35 nH, VGE = ±15 V,
RGoff = 2.7 Ω, dv/dt =
3250 V/µs (Tvj = 175 °C)
Tvj = 25 °C
12.9
Tvj = 125 °C
20.5
Tvj = 175 °C
23.8
VGE ≤ 15 V, VCC = 800 V,
VCEmax=VCES-LsCE*di/dt
tP ≤ 8 µs,
Tvj = 150 °C
640
tP ≤ 7 µs,
Tvj = 175 °C
600
IC = 200 A, VCE = 600 V,
VGE = ±15 V, RGon = 2.7 Ω
IC = 200 A, VCE = 600 V,
VGE = ±15 V, RGoff = 2.7 Ω
IC = 200 A, VCE = 600 V,
VGE = ±15 V, RGoff = 2.7 Ω
4
0.02
mA
100
nA
µs
µs
µs
µs
mJ
mJ
A
0.10
2021-08-26
FP200R12N3T7_B11
EconoPIM™3 module
3 Diode, Inverter
Table 4
Characteristic values (continued)
Parameter
Symbol Note or test condition
Values
Min.
Thermal resistance, junction
to case
RthJC
per IGBT
Thermal resistance, case to
heatsink
RthCH
per IGBT, λgrease= 1 W/(m*K)
Temperature under
switching conditions
Tvj op
Note:
3
Max.
0.231
0.0670
-40
K/W
K/W
175
°C
Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN
2018-14.
Diode, Inverter
Table 5
Maximum rated values
Parameter
Symbol Note or test condition
Repetitive peak reverse
voltage
VRRM
Continous DC forward
current
IF
Repetitive peak forward
current
I2t - value
Table 6
IFRM
I2t
Values
Unit
1200
V
200
A
400
A
Tvj = 125 °C
3700
A²s
Tvj = 175 °C
3050
Tvj = 25 °C
tP = 1 ms
tP = 10 ms, VR = 0 V
Characteristic values
Parameter
Symbol Note or test condition
Values
Min.
Forward voltage
Peak reverse recovery
current
Recovered charge
Datasheet
Typ.
Unit
VF
IRM
Qr
Unit
Typ.
Max.
Tvj = 25 °C
1.72
TBD
Tvj = 125 °C
1.59
Tvj = 175 °C
1.52
VR = 600 V, IF = 200 A,
VGE = -15 V, -diF/dt =
2050 A/µs (Tvj = 175 °C)
Tvj = 25 °C
79.6
Tvj = 125 °C
105
Tvj = 175 °C
118
VR = 600 V, IF = 200 A,
VGE = -15 V, -diF/dt =
2050 A/µs (Tvj = 175 °C)
Tvj = 25 °C
15.7
Tvj = 125 °C
27.7
Tvj = 175 °C
35.6
IF = 200 A, VGE = 0 V
5
V
A
µC
0.10
2021-08-26
FP200R12N3T7_B11
EconoPIM™3 module
4 Diode, Rectifier
Table 6
Characteristic values (continued)
Parameter
Symbol Note or test condition
Values
Min.
Reverse recovery energy
Erec
VR = 600 V, IF = 200 A,
VGE = -15 V, -diF/dt =
2050 A/µs (Tvj = 175 °C)
Tvj = 25 °C
4.85
Tvj = 125 °C
9.64
Tvj = 175 °C
12.2
Thermal resistance, junction
to case
RthJC
per diode
Thermal resistance, case to
heatsink
RthCH
per diode, λgrease= 1 W/(m*K)
Temperature under
switching conditions
Tvj op
Note:
4
Typ.
Unit
Max.
mJ
0.376
0.0730
-40
K/W
K/W
175
°C
Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN
2018-14.
Diode, Rectifier
Table 7
Maximum rated values
Parameter
Symbol Note or test condition
Values
Unit
Repetitive peak reverse
voltage
VRRM
Tvj = 25 °C
1600
V
Maximum RMS forward
current per chip
IFRMSM
TC = 110 °C
150
A
Maximum RMS current at
rectifier output
IRMSM
TC = 110 °C
150
A
IFSM
tP = 10 ms
Tvj = 25 °C
1800
A
Tvj = 150 °C
1600
Tvj = 25 °C
16200
Tvj = 150 °C
12800
Surge forward current
I2t - value
Table 8
I2t
tP = 10 ms
Characteristic values
Parameter
Symbol Note or test condition
Values
Min.
Forward voltage
VF
IF = 200 A
Reverse current
Ir
Tvj = 150 °C, VR = 1600 V
Tvj = 150 °C
Thermal resistance, junction
to case
RthJC
per diode
Thermal resistance, case to
heatsink
RthCH
per diode, λgrease= 1 W/(m*K)
Datasheet
A²s
Typ.
Unit
Max.
1.01
V
1.4
mA
0.278
6
0.0690
K/W
K/W
0.10
2021-08-26
FP200R12N3T7_B11
EconoPIM™3 module
5 IGBT, Brake-Chopper
Table 8
Characteristic values (continued)
Parameter
Symbol Note or test condition
Values
Min.
Temperature under
switching conditions
5
Tvj, op
Typ.
-40
Unit
Max.
150
°C
IGBT, Brake-Chopper
Table 9
Maximum rated values
Parameter
Symbol Note or test condition
Collector-emitter voltage
VCES
Continous DC collector
current
ICDC
Tvj max = 175 °C
Repetitive peak collector
current
ICRM
tP = 1 ms
Gate-emitter peak voltage
VGES
Table 10
Values
Unit
Tvj = 25 °C
1200
V
TC = 75 °C
150
A
300
A
±20
V
Values
Unit
Characteristic values
Parameter
Symbol Note or test condition
Min.
Collector-emitter saturation
voltage
Gate threshold voltage
Gate charge
VCE sat
VGEth
QG
IC = 150 A, VGE = 15 V
Typ.
Max.
Tvj = 25 °C
1.55
TBD
V
Tvj = 125 °C
1.69
Tvj = 175 °C
1.77
6.45
V
IC = 3.5 mA, VCE = VGE, Tvj = 25 °C
VGE = ±15 V, VCE = 600 V
5.15
5.80
2.5
µC
1
Ω
Internal gate resistor
RGint
Tvj = 25 °C
Input capacitance
Cies
f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V
30.1
nF
Reverse transfer capacitance
Cres
f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V
0.105
nF
Collector-emitter cut-off
current
ICES
VCE = 1200 V, VGE = 0 V
Gate-emitter leakage current
IGES
VCE = 0 V, VGE = 20 V, Tvj = 25 °C
Turn-on delay time
(inductive load)
tdon
IC = 150 A, VCE = 600 V,
VGE = ±15 V, RGon = 5.6 Ω
Rise time (inductive load)
Datasheet
tr
IC = 150 A, VCE = 600 V,
VGE = ±15 V, RGon = 5.6 Ω
7
Tvj = 25 °C
Tvj = 25 °C
0.197
Tvj = 125 °C
0.208
Tvj = 175 °C
0.215
Tvj = 25 °C
0.085
Tvj = 125 °C
0.090
Tvj = 175 °C
0.093
0.005
mA
100
nA
µs
µs
0.10
2021-08-26
FP200R12N3T7_B11
EconoPIM™3 module
6 Diode, Brake-Chopper
Table 10
Characteristic values (continued)
Parameter
Symbol Note or test condition
Values
Min.
Turn-off delay time
(inductive load)
tdoff
Fall time (inductive load)
Turn-on energy loss per
pulse
Turn-off energy loss per
pulse
SC data
tf
Eon
Eoff
ISC
IC = 150 A, VCE = 600 V,
VGE = ±15 V, RGoff = 5.6 Ω
IC = 150 A, VCE = 600 V,
VGE = ±15 V, RGoff = 5.6 Ω
IC = 150 A, VCE = 600 V,
Lσ = 35 nH, VGE = ±15 V,
RGon = 5.6 Ω, di/dt =
1150 A/µs (Tvj = 175 °C)
Tvj = 25 °C
0.419
Tvj = 125 °C
0.502
Tvj = 175 °C
0.521
Tvj = 25 °C
0.113
Tvj = 125 °C
0.208
Tvj = 175 °C
0.272
Tvj = 25 °C
12.2
Tvj = 125 °C
19.1
Tvj = 175 °C
23.1
IC = 150 A, VCE = 600 V,
Lσ = 35 nH, VGE = ±15 V,
RGoff = 5.6 Ω, dv/dt =
3100 V/µs (Tvj = 175 °C)
Tvj = 25 °C
10.5
Tvj = 125 °C
16.1
Tvj = 175 °C
20.1
VGE ≤ 15 V, VCC = 800 V,
VCEmax=VCES-LsCE*di/dt
tP ≤ 8 µs,
Tvj = 150 °C
480
tP ≤ 7 µs,
Tvj = 175 °C
450
Thermal resistance, junction
to case
RthJC
per IGBT
Thermal resistance, case to
heatsink
RthCH
per IGBT, λgrease= 1 W/(m*K)
Temperature under
switching conditions
Tvj op
Note:
6
Table 11
Max.
µs
µs
mJ
mJ
A
0.290
0.0700
-40
K/W
K/W
175
°C
Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN
2018-14.
Diode, Brake-Chopper
Maximum rated values
Parameter
Symbol Note or test condition
Repetitive peak reverse
voltage
VRRM
Continous DC forward
current
IF
Repetitive peak forward
current
Datasheet
Typ.
Unit
IFRM
Tvj = 25 °C
tP = 1 ms
8
Values
Unit
1200
V
75
A
150
A
0.10
2021-08-26
FP200R12N3T7_B11
EconoPIM™3 module
7 NTC-Thermistor
Table 11
Maximum rated values (continued)
Parameter
Symbol Note or test condition
I2t - value
I2t
Table 12
tP = 10 ms, VR = 0 V
Values
Unit
Tvj = 125 °C
450
A²s
Tvj = 175 °C
370
Characteristic values
Parameter
Symbol Note or test condition
Values
Min.
Forward voltage
VF
Peak reverse recovery
current
Recovered charge
IRM
Qr
Reverse recovery energy
Erec
Typ.
Max.
Tvj = 25 °C
1.72
TBD
Tvj = 125 °C
1.59
Tvj = 175 °C
1.52
VR = 600 V, IF = 75 A,
VGE = -15 V, -diF/dt =
1050 A/µs (Tvj = 175 °C)
Tvj = 25 °C
38.2
Tvj = 125 °C
50.9
Tvj = 175 °C
58.9
VR = 600 V, IF = 75 A,
VGE = -15 V, -diF/dt =
1050 A/µs (Tvj = 175 °C)
Tvj = 25 °C
5.43
Tvj = 125 °C
10.4
Tvj = 175 °C
14.1
VR = 600 V, IF = 75 A,
VGE = -15 V, -diF/dt =
1050 A/µs (Tvj = 175 °C)
Tvj = 25 °C
10
Tvj = 125 °C
10
Tvj = 175 °C
10
IF = 75 A, VGE = 0 V
Thermal resistance, junction
to case
RthJC
per diode
Thermal resistance, case to
heatsink
RthCH
per diode, λgrease= 1 W/(m*K)
Temperature under
switching conditions
Tvj op
Note:
7
A
µC
mJ
0.728
0.0870
-40
V
K/W
K/W
175
°C
Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN
2018-14.
NTC-Thermistor
Table 13
Parameter
Characteristic values
Symbol Note or test condition
Values
Min.
Rated resistance
R25
Deviation of R100
ΔR/R
Power dissipation
P25
Datasheet
Unit
TNTC = 25 °C
Typ.
Unit
Max.
5
TNTC = 100 °C, R100 = 493 Ω
TNTC = 25 °C
9
-5
kΩ
5
%
20
mW
0.10
2021-08-26
FP200R12N3T7_B11
EconoPIM™3 module
7 NTC-Thermistor
Table 13
Parameter
Characteristic values (continued)
Symbol Note or test condition
Values
Min.
Typ.
Unit
Max.
B-value
B25/50
R2 = R25 exp[B25/50(1/T2-1/(298,15 K))]
3375
K
B-value
B25/80
R2 = R25 exp[B25/80(1/T2-1/(298,15 K))]
3411
K
B-value
B25/100
R2 = R25 exp[B25/100(1/T2-1/(298,15 K))]
3433
K
Note:
Datasheet
Specification according to the valid application note.
10
0.10
2021-08-26
FP200R12N3T7_B11
EconoPIM™3 module
8 Characteristics diagrams
8
Characteristics diagrams
output characteristic (typical), IGBT, Inverter
IC = f(VCE)
VGE = 15 V
output characteristic (typical), IGBT, Inverter
IC = f(VCE)
Tvj = 175 °C
400
400
350
350
300
300
250
250
200
200
150
150
100
100
50
50
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.0
transfer characteristic (typical), IGBT, Inverter
IC = f(VGE)
VCE = 20 V
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
switching losses (typical), IGBT, Inverter
E = f(IC)
RGoff = 2.7 Ω, RGon = 2.7 Ω, VCE = 600 V, VGE = ± 15 V
200
400
180
350
160
300
140
250
120
200
100
80
150
60
100
40
50
20
0
0
5
Datasheet
6
7
8
9
10
11
12
13
0
11
50
100
150
200
250
300
350
400
0.10
2021-08-26
FP200R12N3T7_B11
EconoPIM™3 module
8 Characteristics diagrams
switching losses (typical), IGBT, Inverter
E = f(RG)
IC = 200 A, VCE = 600 V, VGE = ± 15 V
switching times (typical), IGBT, Inverter
t = f(IC)
RGoff = 2.7 Ω, RGon = 2.7 Ω, VCE = 600 V, VGE = ± 15 V, Tvj =
175 °C
220
10
200
180
160
1
140
120
100
80
0.1
60
40
20
0
0.01
0
5
10
15
20
25
30
0
switching times (typical), IGBT, Inverter
t = f(RG)
IC = 200 A, VCE = 600 V, VGE = ± 15 V, Tvj = 175 °C
50
100
150
200
250
300
350
400
transient thermal impedance , IGBT, Inverter
Zth = f(t)
10
1
1
0.1
0.1
0.01
0
Datasheet
5
10
15
20
25
0.01
0.001
30
12
0.01
0.1
1
10
0.10
2021-08-26
FP200R12N3T7_B11
EconoPIM™3 module
8 Characteristics diagrams
Voltage slope (typical), IGBT, Inverter
dv/dt = f(RG)
IC = 200 A, VCE = 600 V, VGE = ± 15 V, Tvj = 25 °C
reverse bias safe operating area (RBSOA), IGBT,
Inverter
IC = f(VCE)
RGoff = 2.7 Ω, VGE = ± 15 V, Tvj = 175 °C
7
500
450
6
400
5
350
300
4
250
3
200
150
2
100
1
50
0
0
0
5
10
15
20
25
30
0
capacity characteristic (typical), IGBT, Inverter
C = f(VCE)
f = 100 kHz, VGE = 0 V, Tvj = 25 °C
200
400
600
800
1000
1200
1400
gate charge characteristic (typical), IGBT, Inverter
VGE = f(QG)
IC = 200 A, Tvj = 25 °C
1000
15
10
100
5
10
0
1
-5
0.1
-10
-15
0.01
0
Datasheet
10
20
30
40
50
60
70
80
90
100
0.0
13
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.10
2021-08-26
FP200R12N3T7_B11
EconoPIM™3 module
8 Characteristics diagrams
forward characteristic (typical), Diode, Inverter
IF = f(VF)
switching losses (typical), Diode, Inverter
Erec = f(IF)
RGon = 2.7 Ω, VCE = 600 V
400
16
350
14
300
12
250
10
200
8
150
6
100
4
50
2
0
0
0.0
0.5
1.0
1.5
2.0
2.5
0
switching losses (typical), Diode, Inverter
Erec = f(RG)
VCE = 600 V, IF = 200 A
50
100
150
200
250
300
350
400
transient thermal impedance , Diode, Inverter
Zth = f(t)
16
1
14
12
10
8
0.1
6
4
2
0
0
Datasheet
5
10
15
20
25
0.01
0.001
30
14
0.01
0.1
1
10
0.10
2021-08-26
FP200R12N3T7_B11
EconoPIM™3 module
8 Characteristics diagrams
forward characteristic (typical), Diode, Rectifier
IF = f(VF)
transient thermal impedance , Diode, Rectifier
Zth = f(t)
1
400
350
300
250
200
0.1
150
100
50
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.01
0.001
1.4
output characteristic (typical), IGBT, Brake-Chopper
IC = f(VCE)
VGE = 15 V
150
250
125
200
100
150
75
100
50
50
25
1
10
0
0.0
Datasheet
0.1
forward characteristic (typical), Diode, BrakeChopper
IF = f(VF)
300
0
0.01
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.0
15
0.5
1.0
1.5
2.0
2.5
0.10
2021-08-26
FP200R12N3T7_B11
EconoPIM™3 module
8 Characteristics diagrams
temperature characteristic (typical), NTC-Thermistor
R = f(TNTC)
100000
10000
1000
100
10
0
Datasheet
25
50
75
100
125
150
175
16
0.10
2021-08-26
FP200R12N3T7_B11
EconoPIM™3 module
9 Circuit diagram
9
Circuit diagram
Figure 2
Datasheet
17
0.10
2021-08-26
FP200R12N3T7_B11
EconoPIM™3 module
10 Package outlines
10
Package outlines
Figure 3
Datasheet
18
0.10
2021-08-26
FP200R12N3T7_B11
EconoPIM™3 module
Revision history
Revision history
Document revision
Date of release
Description of changes
0.10
2021-08-26
Initial version
Datasheet
19
0.10
2021-08-26
Trademarks
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Edition 2021-08-26
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2021 Infineon Technologies AG
All Rights Reserved.
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aspect of this document?
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Document reference
IFX-ABB747-001
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