IAUZ30N06S5L140ATMA1

IAUZ30N06S5L140 OptiMOS™-5 Power Transistor Product Summary Features • OptiMOS™ power MOSFET for automotive applications • N-channel - Enhancement mode - Logic level VDS 60 V RDS(on),max 14 mW ID 30 A • MSL1 up to 260°C peak reflow PG-TSDSON-8-32 • 175 °C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested Type Package Marking IAUZ30N06S5L140 PG-TSDSON-8-32 5N6L140 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Drain current ID Conditions V GS=10 V, Chip limitation1,2) V GS=10V, DC current T a=85 °C, V GS=10 V, Value 30 Unit A 30 R thJA on 2s2p2,3) 8 Pulsed drain current2) I D,pulse T C=25 °C, t p= 100 µs 85 Avalanche energy, single pulse2) E AS I D=15 A 27 mJ Avalanche current, single pulse I AS - 30 A Gate source voltage V GS - ±16 V Power dissipation P tot T C=25 °C 33 W Operating and storage temperature T j, T stg - -55 ... +175 °C Rev. 1.1 page 1 2021-03-18 IAUZ30N06S5L140 Parameter Symbol Values Conditions Unit min. typ. max. Thermal characteristics2) Thermal resistance, junction - case R thJC - - - 4.6 Thermal resistance, junction ambient3) R thJA - - 37.2 - K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0V, I D=1mA 60 - - Gate threshold voltage V GS(th) V DS=V GS, I D=10µA 1.2 1.7 2.2 Zero gate voltage drain current I DSS V DS=60V, V GS=0V, T j=25°C - - 1 T j=125°C1) - - 100 V DS=60V, V GS=0V, V µA Gate-source leakage current I GSS V GS=16V, V DS=0V - - 100 nA Drain-source on-state resistance R DS(on) V GS=4.5V, I D=15A - 16.3 19.6 mW V GS=10V, I D=15A - 11.2 14 - - 1.4 - Gate resistance2) Rev. 1.1 RG page 2 W 2021-03-18 IAUZ30N06S5L140 Parameter Symbol Values Conditions Unit min. typ. max. - 683 888 - 136 177 Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance Crss - 10 15 Turn-on delay time t d(on) - 1.6 - Turn-off delay time t d(off) - 4.1 - Rise time tr - 1.0 - Fall time tf - 1.8 - Gate to source charge Q gs - 2.3 2.9 Gate to drain charge Q gd - 1.6 2.4 Gate charge total Qg - 9.4 12.2 Gate plateau voltage V plateau - 3.3 - V A V GS=0V, V DS=30V, f =1MHz V DD=30V, V GS=10V, I D=15A, R G,ext=3.5W pF ns Gate Charge Characteristics2) V DD=30V, I D=15A, V GS=0 to 10V nC Reverse Diode Diode continous forward current2) IS T C=25°C - - 30 Diode pulse current2) I S,pulse T C=25 °C, t p= 100 µs - - 85 Diode forward voltage V SD V GS=0V, I F=15A, T j=25°C - 0.8 1.1 V Reverse recovery time2) t rr - 26 - ns Reverse recovery charge2) Q rr - 18 - nC V R=30V, I F=30A, di F/dt =100A/µs 1) Practically the current is limited by the overall system design including the customer-specific PCB. 2) The parameter is not subject to production test - verified by design/characterization. 3) Device on a four-layer 2s2p FR4 PCB defined in accordance with JEDEC standards (JESD51-5-7). PCB is vertical in still air. Rev. 1.1 page 3 2021-03-18 IAUZ30N06S5L140 2 Drain current P tot = f(T C); V GS = 10 V I D = f(T C); V GS = 10 V 40 40 30 30 ID [A] Ptot [W] 1 Power dissipation 20 10 20 10 0 0 0 50 100 150 200 0 50 100 TC [°C] 150 200 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0 Z thJC = f(t p) parameter: t p parameter: D =t p/T 100 101 1 µs 0.5 10 µs 100 100 µs 0.1 150 µs ZthJC [K/W] ID [A] 0.05 10 0.01 10-1 single pulse 10-2 1 10-3 0.1 1 10 100 VDS [V] Rev. 1.1 10-6 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2021-03-18 IAUZ30N06S5L140 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C R DS(on) = f(I D); T j = 25 °C parameter: V GS parameter: V GS 160 50 45 4V 40 120 4.5 V 35 5V RDS(on) [mW] ID [A] 6V 10 V 80 4.5 V 30 5V 25 20 40 4V 15 6V 10 V 10 0 0 1 2 3 4 5 5 6 0 20 40 VDS [V] 60 80 100 ID [A] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V R DS(on) = f(T j); parameter: T j parameter: ID, VGS 100 30 -55 °C 27 25 °C 80 24 VGS=4.5V, ID=15A 175 °C ID [A] RDS(on) [mW] 60 40 21 18 15 12 VGS=10V, ID=15A 20 9 0 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 VGS [V] Rev. 1.1 6 -60 -20 20 60 100 140 180 Tj [°C] page 5 2021-03-18 IAUZ30N06S5L140 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS C = f(V DS); V GS = 0 V; f = 1 MHz parameter: I D 103 2.5 Ciss 2 Coss VGS(th) [V] 1.5 C [pF] 100 µA 10 µA 102 1 Crss 0.5 0 101 -60 -20 20 60 100 140 0 180 10 20 30 40 50 60 VDS [V] Tj [°C] 11 Typical forward diode characteristics 12 Avalanche characteristics IF = f(VSD) I AS= f(t AV) parameter: T j parameter: Tj(start) 100 103 IF [A] IAV [A] 102 10 25 °C 100 °C 150 °C 101 175 °C 17525°C°C25 °C 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD [V] Rev. 1.1 1 0.1 1 10 100 1000 tAV [µs] page 6 2021-03-18 IAUZ30N06S5L140 13 Avalanche energy 14 Drain-source breakdown voltage E AS = f(T j) V BR(DSS) = f(T j); I D = 1 mA parameter: I D 66 60 50 64 7.5 A VBR(DSS) [V] EAS [mJ] 40 30 15 A 62 60 20 58 30 A 10 56 0 25 75 125 -55 175 -15 Tj [°C] 25 65 105 145 Tj [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 15 A pulsed parameter: V DD 10 V GS 12 V 9 Qg 30 V 8 48V 7 VGS [V] 6 5 V gs(th) 4 3 2 Q g(th) Q sw Q gate 1 Q gs 0 0 2 4 6 8 Q gd 10 Qgate [nC] Rev. 1.1 page 7 2021-03-18 IAUZ30N06S5L140 Package Outline Footprint Packaging Rev. 1.1 page 8 2021-03-18 IAUZ30N06S5L140 Published by Infineon Technologies AG 81726 Munich, Germany © Infineon Technologies AG 2021 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.1 page 9 2021-03-18 IAUZ30N06S5L140 Revision History Version Date Changes Revision 1.0 07.05.2020 Final Data Sheet Revision 1.1 18.03.2021 Modified package outline and footprint Rev. 1.1 page 10 2021-03-18