IAUZ18N10S5L420ATMA1 数据手册
IAUZ18N10S5L420
OptiMOS™-5 Power-Transistor
Product Summary
VDS
100
V
RDS(on),max
42
mW
ID
18
A
Features
• OptiMOS™ - power MOSFET for automotive applications
PG-TSDSON-8
• N-channel - Enhancement mode - Logic Level
• AEC Q101 qualified
1
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
1
• Green Product (RoHS compliant)
• 100% Avalanche tested
• Feasible for automatic optical inspection (AOI)
Type
Package
Marking
IAUZ18N10S5L420
PG-TSDSON-8
5N1L420
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
Conditions
Value
T C=25°C, V GS=10V
18
T C=100°C, V GS=10V1)
13
Unit
A
Pulsed drain current1)
I D,pulse
T C=25°C
72
Avalanche energy, single pulse1)
E AS
I D=7A
11
mJ
Avalanche current, single pulse
I AS
-
7
A
Gate source voltage
V GS
-
±20
V
Power dissipation
P tot
T C=25°C
TJ =175°C
30
W
Operating and storage temperature
T j, T stg
-
-55 ... +175
°C
IEC climatic category; DIN IEC 68-1
-
-
55/175/56
-
Rev. 1.0
page 1
2019-07-23
IAUZ18N10S5L420
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
Thermal characteristics1)
Thermal resistance, junction - case
R thJC
-
-
-
5.0
Thermal resistance, junction ambient
R thJA
6 cm2 cooling area2)
-
-
62
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0V, I D= 1mA
100
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=8µA
1.2
1.7
2.2
Zero gate voltage drain current
I DSS
V DS=100V, V GS=0V,
T j=25°C
-
-
1
T j=125°C1)
-
-
100
V DS=100V, V GS=0V,
V
µA
Gate-source leakage current
I GSS
V GS=20V, V DS=0V
-
-
100
nA
Drain-source on-state resistance
R DS(on)
V GS=4.5V, I D=9A
-
46
55
mW
V GS=10V, I D=9A
-
34.5
42
-
1.8
-
Gate resistance1)
Rev. 1.0
RG
page 2
W
2019-07-23
IAUZ18N10S5L420
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
-
356
470
-
68
88
Dynamic characteristics1)
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
6
9
Turn-on delay time
t d(on)
-
1
-
Rise time
tr
-
1
-
Turn-off delay time
t d(off)
-
3
-
Fall time
tf
-
3
-
Gate to source charge
Q gs
-
1.2
1.7
Gate to drain charge
Q gd
-
1.2
2.0
Gate charge total
Qg
-
5.4
8
Gate plateau voltage
V plateau
-
3.3
-
V
-
-
18
A
-
-
72
-
0.9
1.1
V
-
36
-
ns
-
33
-
nC
V GS=0V, V DS=50V,
f =1MHz
V DD=50V, V GS=10V,
I D=18A, R G=3.5W
pF
ns
Gate Charge Characteristics1)
V DD=50V, I D=9A,
V GS=0 to 10V
nC
Reverse Diode
Diode continous forward current1)
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time1)
t rr
Reverse recovery charge1)
Q rr
1)
T C=25°C
V GS=0V, I F=9A,
T j=25°C
V R=50V, I F=18A,
di F/dt =100A/µs
Specified by design. Not subject to production test.
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2019-07-23
IAUZ18N10S5L420
1 Power dissipation
2 Drain current
P tot = f(T C); V GS ≥ 6 V
I D = f(T C); V GS ≥ 6 V
35
20
30
15
20
ID [A]
Ptot [W]
25
10
15
10
5
5
0
0
0
50
100
150
200
0
50
100
TC [°C]
150
200
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D = f(V DS); T C = 25 °C; D = 0
Z thJC = f(t p)
parameter: t p
parameter: D =t p/T
100
101
0.5
1 µs
10 µs
100
ZthJC [K/W]
ID [A]
100 µs
10
0.1
150 µs
0.05
0.01
10-1
single pulse
1
10-2
0.1
1
10
100
VDS [V]
Rev. 1.0
10-6
10-5
10-4
10-3
10-2
10-1
100
tp [s]
page 4
2019-07-23
IAUZ18N10S5L420
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D = f(V DS); T j = 25 °C
R DS(on) = f(I D); T j = 25 °C
parameter: V GS
parameter: V GS
90
90
3V
10 V
75
80
3,5 V
60
70
RDS(on) [mW]
ID [A]
4V
45
4.5 V
30
4.5 V
60
50
4V
15
40
3.5 V
10 V
3V
0
0
2
4
6
30
8
0
10
20
30
VDS [V]
40
50
60
70
ID [A]
7 Typ. transfer characteristics
8 Typ. drain-source on-state resistance
I D = f(V GS); V DS = 6V
R DS(on) = f(T j); I D = 9 A
parameter: T j
Parameter: VGS
80
100
-55 °C
70
80
60
25 °C
40
175 °C
30
RDS(on) [mW]
ID [A]
50
60
4.5V
40
10V
20
20
10
0
1.5
2.5
3.5
4.5
0
5.5
-60
VGS [V]
Rev. 1.0
-20
20
60
100
140
180
Tj [°C]
page 5
2019-07-23
IAUZ18N10S5L420
9 Typ. gate threshold voltage
10 Typ. capacitances
V GS(th) = f(T j); V GS = V DS
C = f(V DS); V GS = 0 V; f = 1 MHz
parameter: I D
103
2.3
Ciss
2.1
1.9
Coss
VGS(th) [V]
1.5
C [pF]
80 µA
1.7
102
8 µA
1.3
Crss
101
1.1
0.9
0.7
100
0.5
-60
-20
20
60
100
140
0
180
20
40
60
80
100
VDS [V]
Tj [°C]
11 Typical forward diode characteristics
12 Avalanche characteristics
IF = f(VSD)
I A S= f(t AV)
parameter: T j
parameter: Tj(start)
10
103
25 °C
100 °C
102
IF [A]
IAV [A]
150 °C
1
101
175 °C
25 °C
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
VSD [V]
Rev. 1.0
0.1
0.1
1
10
100
1000
tAV [µs]
page 6
2019-07-23
IAUZ18N10S5L420
13 Avalanche energy
14 Drain-source breakdown voltage
E AS = f(T j)
V BR(DSS) = f(T j); I D = 1 mA
parameter: ID
110
45
40
1.75 A
35
105
VBR(DSS) [V]
EAS [mJ]
30
25
3.5 A
20
100
15
7A
10
5
95
0
25
75
125
-60
175
-20
Tj [°C]
20
60
100
140
180
Tj [°C]
15 Typ. gate charge
16 Gate charge waveforms
V GS = f(Q gate); I D = 9 A pulsed
parameter: V DD
10
V GS
9
Qg
8
80 V
7
VGS [V]
6
20 V
50 V
5
V gs(th)
4
3
2
Q g(th)
Q sw
Q gate
1
Q gs
0
0
1
2
3
4
5
Q gd
6
Qgate [nC]
Rev. 1.0
page 7
2019-07-23
IAUZ18N10S5L420
PG-TSDSON-8: Outline
Footprint
Dimensions in mm
Packaging
Rev. 1.0
page 8
2019-07-23
IAUZ18N10S5L420
Published by
Infineon Technologies AG
85579 Neubiberg, Germany
© Infineon Technologies AG 2019
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 9
2019-07-23
IAUZ18N10S5L420
Revision History
Version
Date
Changes
Revision 1.0
Rev. 1.0
23.07.2019 Final Data Sheet
page 10
2019-07-23
IAUZ18N10S5L420ATMA1 价格&库存
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