IAUZ40N06S5L050ATMA1

IAUZ40N06S5L050 Automotive MOSFET OptiMOS™-5 Power-Transistor PG-TSDSON-8-33 Features • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement mode – Logic Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested 1 1 5 6 7 8 1 2 3 4 Potential applications General automotive applications. Product validation Qualified for automotive applications. Product validation according to AEC-Q101. Product Summary VDS 60 V RDS(on) 5 mΩ ID (chip limited) 90 A Type Package Marking IAUZ40N06S5L050 PG-TSDSON-8-33 5N6L050 Data Sheet Please read the Important Notice and Warnings at the end of this document www.infineon.com/mosfets Rev. 1.2 2021-10-01 OptiMOS™ 5 Automotive Power MOSFET, 60 V IAUZ40N06S5L050 Table of Contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1. . . . . . . . Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3. . . . . . . . Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4. . . . . . . . Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4. . . . . . . . Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6. . . . . . . . Package outline & footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 .......... Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 ......... Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 ......... 2 Data Sheet 2 Rev. 1.2 2021-10-01 OptiMOS™ 5 Automotive Power MOSFET, 60 V IAUZ40N06S5L050 Maximum ratings at Tj=25 °C, unless otherwise specified Parameter Symbol ID Continuous drain current Conditions Value V GS=10 V, Chip limitation1,2) 90 V GS=10V, DC current3) 40 T a=85 °C, V GS=10 V, R thJA on Unit A 12 I D,pulse 2s2p2,4) T C=25 °C, t p= 100 µs 252 E AS I D=20 A 115 mJ Avalanche current, single pulse I AS – 40 A Gate source voltage V GS – ±16 V Power dissipation P tot T C=25 °C 71 W Operating and storage temperature T j, T stg – -55 ... +175 °C IEC climatic category; DIN IEC 68-1 – – 55/175/56 Pulsed drain current2) Avalanche energy, single pulse Data Sheet 2) 3 3 Rev. 1.2 2021-10-01 OptiMOS™ 5 Automotive Power MOSFET, 60 V IAUZ40N06S5L050 Thermal characteristics2) Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient4) Symbol Values Conditions Unit min. typ. max. R thJC – – – 2.1 R thJA – – 61.8 – K/W Electrical characteristics at Tj=25 °C, unless otherwise specified Parameter Symbol Values Conditions Unit min. typ. max. Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 60 – – Gate threshold voltage V GS(th) V DS=V GS, I D=29 µA 1.2 1.7 2.2 Zero gate voltage drain current I DSS V DS=60 V, V GS=0 V, T j=25 °C – – 1 – – 100 V DS=60 V, V GS=0 V, T j=100 °C2) V µA Gate-source leakage current I GSS V GS=16 V, V DS=0 V – – 100 nA Drain-source on-state resistance RDS(on) V GS=4.5 V, I D=20 A – 5.3 6.4 mΩ V GS=10 V, I D=20 A – 4.0 5.0 – – 1.35 – Gate resistance2) Data Sheet RG 4 4 Ω Rev. 1.2 2021-10-01 OptiMOS™ 5 Automotive Power MOSFET, 60 V IAUZ40N06S5L050 Parameter Symbol Values Conditions Unit min. typ. max. – 1923 2500 pF – 356 463 Dynamic characteristics2) Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss – 18 27 Turn-on delay time t d(on) – 3.3 – Rise time tr – 0.9 – Turn-off delay time t d(off) – 14.6 – Fall time tf – 8.0 – Gate to source charge Q gs – 5.6 7.3 Gate to drain charge Q gd – 4.3 6.5 Gate charge total Qg – 28.2 36.7 Gate plateau voltage V plateau – 3.0 – V A V GS=0 V, V DS=30 V, f =1 MHz V DD=30 V, V GS=10 V, I D=20 A, R G=3.5 Ω ns Gate Charge Characteristics2) V DD=30 V, I D=20 A, V GS=0 to 10 V nC Reverse Diode Diode continous forward current2) IS T C=25 °C – – 40 Diode pulse current2) I S,pulse T C=25 °C, t p= 100 µs – – 252 Diode forward voltage V SD V GS=0 V, I F=20 A, T j=25 °C – 0.8 1.1 V Reverse recovery time2) t rr – 33 – ns Reverse recovery charge2) Q rr V R=30 V, I F=40 A, di F/dt =100 A/µs – 23 – nC 1) Practically the current is limited by the overall system design including the customer-specific PCB. 2) The parameter is not subject to production testing – specified by design. 3) Current is limited by the package. 4) Device on 2s2p FR4 PCB defined in accordance with JEDEC standards (JESD51-5, -7). PCB is vertical in still air. Data Sheet 5 5 Rev. 1.2 2021-10-01 OptiMOS™ 5 Automotive Power MOSFET, 60 V IAUZ40N06S5L050 Electrical characteristics diagrams 1 Power dissipation 2 Drain current P tot = f(T C); V GS = 10 V I D = f(T C); V GS = 10 V 80 100 90 80 60 Chip limit 70 ID [A] Ptot [W] 60 40 50 40 DC current 30 20 20 10 0 0 0 50 100 150 200 0 50 100 TC [°C] 150 200 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(V DS); T C = 25 °C; D = 0; parameter: tp Z thJC = f(t p); parameter: D=tp/T 1000 101 1 µs 10 µs 100 100 0.5 10 ZthJC [K/W] ID [A] 100 µs 150 µs 0.1 0.05 10-1 0.01 1 single pulse 10-2 0.1 0.1 1 10 100 10-6 10-4 10-3 10-2 10-1 100 tp [s] VDS [V] Data Sheet 10-5 66 Rev. 1.2 2021-10-01 OptiMOS™ 5 Automotive Power MOSFET, 60 V IAUZ40N06S5L050 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(V DS); T j = 25 °C; parameter: VGS R DS(on) = f(I D); T j = 25 °C; parameter: VGS 12 360 10 V 6V 320 10 5V 280 4V 200 RDS(on) [mW] ID [A] 240 4.5 V 160 120 8 4.5 V 5V 6 4V 6V 80 4 10 V 40 2 0 0 1 2 3 4 5 6 0 7 50 100 150 200 250 300 ID [A] VDS [V] 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(V GS); V DS = 6V: parameter: Tj R DS(on) = f(T j); parameter: ID, VGS 250 14 -55 °C 200 12 25 °C 175 °C RDS(on) [mW] 10 ID [A] 150 100 8 VGS = 4.5 V, ID = 20 A 6 4 VGS = 10 V, ID = 20 A 50 2 0 0 0 2 4 -60 6 20 60 100 140 180 Tj [°C] VGS [V] Data Sheet -20 77 Rev. 1.2 2021-10-01 OptiMOS™ 5 Automotive Power MOSFET, 60 V IAUZ40N06S5L050 9 Typ. gate threshold voltage 10 Typ. capacitances V GS(th) = f(T j); V GS = V DS; parameter: I D C = f(V DS); V GS = 0 V; f = 1 MHz 2.5 104 Ciss 2 103 290 µA Coss 29 µA C [pF] VGS(th) [V] 1.5 102 1 Crss 101 0.5 0 -60 -20 20 60 100 140 0 180 20 Tj [°C] 40 60 VDS [V] 11 Typical forward diode characteristics 12 Typ. avalanche characteristics I F = f(V SD ); parameter: T j I AS = f(t AV); parameter: T j(start) 100 103 25 °C 102 IAV [A] IF [A] 100 °C 25 °C 150 °C 10 175 °C 101 1 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1 VSD [V] Data Sheet 10 100 1000 tAV [µs] 88 Rev. 1.2 2021-10-01 OptiMOS™ 5 Automotive Power MOSFET, 60 V IAUZ40N06S5L050 13 Typical avalanche energy 14 Drain-source breakdown voltage E AS = f(T j); parameter: ID V BR(DSS) = f(T j); I D_typ = 1 mA 66 300 250 64 10 A VBR(DSS) [V] EAS [mJ] 200 150 20 A 62 60 100 40 A 58 50 56 0 25 75 125 -55 175 -15 25 Tj [°C] 65 105 145 Tj [°C] 15 Typ. gate charge 16 Gate charge waveforms V GS = f(Q gate); I D = 20 A pulsed; parameter: V DD 10 9 V GS Qg 8 12 V 7 30 V VGS [V] 6 48 V 5 4 3 2 Q gate 1 Q gs Q gd 0 0 10 20 30 Qgate [nC] Data Sheet 99 Rev. 1.2 2021-10-01 OptiMOS™ 5 Automotive Power MOSFET, 60 V IAUZ40N06S5L050 Package Outline Insert image Footprint Insert image Packaging Insert image Data Sheet 10 10 Rev. 1.2 2021-10-01 OptiMOS™ 5 Automotive Power MOSFET, 60 V IAUZ40N06S5L050 Revision History Revision Date Changes Revision 1.0 04.05.2021 final data sheet Revision 1.1 07.05.2021 marking (page 1) Revision 1.2 01.10.2021 normal level -> logic level (page 1) Data Sheet 11 11 Rev. 1.2 2021-10-01 Trademarks All referenced product or service names and trademarks are the property of their respective owners. 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