IPA082N10NF2SXKSA1

IPA082N10NF2S MOSFET StrongIRFETTM2Power-Transistor PG-TO220FP Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100%avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation QualifiedaccordingtoJEDECStandard Drain Pin 2 Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 8.2 mΩ ID 46 A Qoss 38 nC QG 28 nC Gate Pin 1 Source Pin 3 Type/OrderingCode Package IPA082N10NF2S PG-TO220 FullPAK Final Data Sheet 1 Marking RelatedLinks 082N10NS - Rev.2.1,2022-06-14 StrongIRFETTM2Power-Transistor IPA082N10NF2S TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Final Data Sheet 2 Rev.2.1,2022-06-14 StrongIRFETTM2Power-Transistor IPA082N10NF2S 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 46 32 A VGS=10V,TC=25°C VGS=10V,TC=100°C - 184 A TA=25°C - - 80 mJ ID=40A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 35 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 175 °C - Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche energy, single pulse EAS Gate source voltage Pulsed drain current2) 3) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case RthJC Values Min. Typ. Max. - - 4.3 °C/W - 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3.0 3.8 V VDS=VGS,ID=46µA - 0.1 10 1.0 100 µA VDS=100V,VGS=0V,Tj=25°C VDS=100V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance4) RDS(on) - 7.3 8.9 8.2 10.3 mΩ VGS=10V,ID=30A VGS=6V,ID=15A Gate resistance RG - 1.1 - Ω - Transconductance5) gfs 31 - - S |VDS|≥2|ID|RDS(on)max,ID=30A Min. Typ. Max. V(BR)DSS 100 - Gate threshold voltage VGS(th) 2.2 Zero gate voltage drain current IDSS Gate-source leakage current 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) See Diagram 3 for more detailed information 3) See Diagram 13 for more detailed information 4) RDS(on) is specified at a distance of 1.8 mm distance to the package body; mounting at a larger distance increases the overall package resistance of approximately 0.04 mOhm/mm per leg. 5) Defined by design. Not subject to production test. Final Data Sheet 3 Rev.2.1,2022-06-14 StrongIRFETTM2Power-Transistor IPA082N10NF2S Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Unit Note/TestCondition - pF VGS=0V,VDS=50V,f=1MHz 320 - pF VGS=0V,VDS=50V,f=1MHz - 15 - pF VGS=0V,VDS=50V,f=1MHz td(on) - 11 - ns VDD=50V,VGS=10V,ID=30A, RG,ext=1.6Ω Rise time tr - 20 - ns VDD=50V,VGS=10V,ID=30A, RG,ext=1.6Ω Turn-off delay time td(off) - 16 - ns VDD=50V,VGS=10V,ID=30A, RG,ext=1.6Ω Fall time tf - 5 - ns VDD=50V,VGS=10V,ID=30A, RG,ext=1.6Ω Unit Note/TestCondition Min. Typ. Max. Ciss - 2000 Output capacitance Coss - Reverse transfer capacitance Crss Turn-on delay time Table6Gatechargecharacteristics1) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 9.3 - nC VDD=50V,ID=30A,VGS=0to10V Gate charge at threshold Qg(th) - 6.0 - nC VDD=50V,ID=30A,VGS=0to10V Gate to drain charge Qgd - 6.0 - nC VDD=50V,ID=30A,VGS=0to10V Switching charge Qsw - 9.3 - nC VDD=50V,ID=30A,VGS=0to10V Gate charge total Qg - 28 42 nC VDD=50V,ID=30A,VGS=0to10V Gate plateau voltage Vplateau - 4.7 - V VDD=50V,ID=30A,VGS=0to10V Output charge Qoss - 38 - nC VDS=50V,VGS=0V Unit Note/TestCondition 2) Table7Reversediode Parameter Symbol Diode continuous forward current Values Min. Typ. Max. IS - - 26 A TC=25°C Diode pulse current IS,pulse - - 184 A TC=25°C Diode forward voltage VSD - 0.83 1.2 V VGS=0V,IF=15A,Tj=25°C Reverse recovery time trr - 33 - ns VR=50V,IF=15A,diF/dt=500A/µs Reverse recovery charge Qrr - 199 - nC VR=50V,IF=15A,diF/dt=500A/µs 1) 2) See ″Gate charge waveforms″ for parameter definition Defined by design. Not subject to production test. Final Data Sheet 4 Rev.2.1,2022-06-14 StrongIRFETTM2Power-Transistor IPA082N10NF2S 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 40 50 35 40 30 30 ID[A] Ptot[W] 25 20 20 15 10 10 5 0 0 25 50 75 100 125 150 0 175 0 25 50 TC[°C] 75 100 125 Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 175 100 101 102 10 1 µs 102 101 10 µs single pulse 0.01 0.02 0.05 0.1 0.2 0.5 ZthJC[K/W] 100 µs 101 ID[A] 150 TC[°C] 1 ms 100 10 ms 100 10-1 10-1 10-3 10-2 DC 10-2 10-1 100 101 102 103 10-3 10-6 10-5 10-4 VDS[V] 10-2 10-1 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 5 Rev.2.1,2022-06-14 StrongIRFETTM2Power-Transistor IPA082N10NF2S Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 200 24 10 V 8V 175 20 7V 150 6V 4.5 V 16 5V RDS(on)[mΩ] ID[A] 125 100 75 12 6V 7V 8 8V 50 10 V 5V 4 25 0 4.5 V 0 1 2 3 4 0 5 0 20 40 VDS[V] 60 80 100 ID[A] ID=f(VDS),Tj=25°C;parameter:VGS RDS(on)=f(ID),Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.drain-sourceonresistance 200 24 175 20 150 16 RDS(on)[mΩ] ID[A] 125 100 75 175 °C 12 8 50 25 °C 4 175 °C 25 25 °C 0 0 1 2 3 4 5 6 7 VGS[V] 0 3 6 9 12 15 VGS[V] ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 0 RDS(on)=f(VGS),ID=30A;parameter:Tj 6 Rev.2.1,2022-06-14 StrongIRFETTM2Power-Transistor IPA082N10NF2S Diagram9:Normalizeddrain-sourceonresistance Diagram10:Typ.gatethresholdvoltage 2.4 4.0 3.5 3.0 460 µA 1.6 2.5 VGS(th)[V] RDS(on)(normalizedto25°C) 2.0 1.2 2.0 46 µA 1.5 0.8 1.0 0.4 0.5 0.0 -75 -50 -25 0 25 50 75 0.0 -75 100 125 150 175 200 -50 -25 0 25 Tj[°C] 50 75 100 125 150 175 200 Tj[°C] RDS(on)=f(Tj),ID=30A,VGS=10V VGS(th=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Typ.forwardcharacteristicsofreversediode 4 103 10 25 °C 175 °C Ciss IF[A] 102 C[pF] 103 Coss 102 101 Crss 101 0 20 40 60 80 100 100 0.00 0.25 VDS[V] 0.75 1.00 1.25 1.50 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.50 IF=f(VSD);parameter:Tj 7 Rev.2.1,2022-06-14 StrongIRFETTM2Power-Transistor IPA082N10NF2S Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 10 20 V 50 V 80 V 8 25 °C 101 6 VGS[V] IAV[A] 100 °C 150 °C 4 0 10 2 10-1 10-1 100 101 102 103 tAV[µs] 0 0 5 10 15 20 25 30 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj,start VGS=f(Qgate),ID=30Apulsed,Tj=25°C;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 108 106 VBR(DSS)[V] 104 102 100 98 96 94 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 8 Rev.2.1,2022-06-14 StrongIRFETTM2Power-Transistor IPA082N10NF2S 5PackageOutlines PACKAGE - GROUP NUMBER: REVISION: 01 DIMENSIONS A A1 A2 b b1 b2 c D D1 E e H L L1 øP Q PG-TO220-3-U02 DATE: 02.02.2021 MILLIMETERS MIN. MAX. 4.50 4.90 2.34 2.85 3.43 2.42 0.61 0.94 0.76 1.45 0.95 1.52 0.33 0.63 15.67 16.15 8.66 9.83 9.63 10.75 2.54 29.85 29.00 13.75 12.78 2.83 3.67 3.05 3.45 3.50 3.20 Figure1OutlinePG-TO220FullPAK,dimensionsinmm Final Data Sheet 9 Rev.2.1,2022-06-14 StrongIRFETTM2Power-Transistor IPA082N10NF2S RevisionHistory IPA082N10NF2S Revision:2022-06-14,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2021-03-16 Release of final version 2.1 2022-06-14 Skip condition "Operating and storage tempt.", update trr, Qrr and Diagram 12 Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2022InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 10 Rev.2.1,2022-06-14