IPTC015N10NM5
MOSFET
OptiMOSTM5Power-Transistor,100V
PG-HDSOP-16-2
16
Features
16
9
9
•Optimizedformotordrivesandbatterypoweredapplications
•Optimizedfortopsidecooling
•Highcurrentcapability
•175°Crated
•100%avalanchetested
•Superiorthermalperformance
•N-channel
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
1
8
8
1
Productvalidation
Drain
Pin 9-16, Tab
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Gate
Pin 8
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
100
V
RDS(on),max
1.5
mΩ
ID
354
A
Qoss
210
nC
QG
166
nC
Type/OrderingCode
Package
IPTC015N10NM5
PG-HDSOP-16
Final Data Sheet
Source
Pin 1-7
Marking
15N10NM5
1
RelatedLinks
-
Rev.2.0,2021-02-02
OptiMOSTM5Power-Transistor,100V
IPTC015N10NM5
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.2.0,2021-02-02
OptiMOSTM5Power-Transistor,100V
IPTC015N10NM5
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Values
Unit
Note/TestCondition
354
250
211
35
A
VGS=10V,TC=25°C
VGS=10V,TC=100°C
VGS=6V,TC=100°C
VGS=10V,TA=25°C,RthJA=40°C/W2)
-
1416
A
TA=25°C
-
-
652
mJ
ID=150A,RGS=25Ω
VGS
-20
-
20
V
-
Power dissipation
Ptot
-
-
375
3.8
W
TC=25°C
TA=25°C,RthJA=40°C/W2)
Operating and storage temperature
Tj,Tstg
-55
-
175
°C
IEC climatic category; DIN IEC 68-1:
55/175/56
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
ID,pulse
-
Avalanche energy, single pulse
EAS
Gate source voltage
1)
Continuous drain current
Pulsed drain current3)
4)
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case,
Top
Values
Min.
Typ.
Max.
RthJC
-
-
0.4
°C/W -
Thermal characterization parameter,
junction to lead (Pin 1-7)5)
ΨJL
-
9
-
°C/W -
Thermal characterization parameter,
junction to lead (Pin 9-16)5)
ΨJL
-
3
-
°C/W -
-
40
-
°C/W -
Thermal resistance, junction - ambient RthJA
1)
Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See Diagram 3 for more detailed information
4)
See Diagram 13 for more detailed information
5)
ΨJL is a temperature characterization parameter according to JESD51-12 referring to the temperature difference between
junction and leads in the case of natural convection. It can be used to estimate the component junction temperature in the
application by measuring the temperature at the leads in the stated application environment
Final Data Sheet
3
Rev.2.0,2021-02-02
OptiMOSTM5Power-Transistor,100V
IPTC015N10NM5
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
3
3.8
V
VDS=VGS,ID=275µA
-
0.1
10
1
100
µA
VDS=100V,VGS=0V,Tj=25°C
VDS=100V,VGS=0V,Tj=125°C
IGSS
-
10
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
1.3
1.6
1.5
2.1
mΩ
VGS=10V,ID=100A
VGS=6V,ID=75A
Gate resistance
RG
-
1.5
-
Ω
-
Transconductance
gfs
-
270
-
S
|VDS|≥2|ID|RDS(on)max,ID=100A
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
100
-
Gate threshold voltage
VGS(th)
2.2
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance1)
Values
Min.
Typ.
Ciss
-
12000 16000 pF
VGS=0V,VDS=50V,f=1MHz
Coss
-
1800
2300
pF
VGS=0V,VDS=50V,f=1MHz
Reverse transfer capacitance
Crss
-
79
140
pF
VGS=0V,VDS=50V,f=1MHz
Turn-on delay time
td(on)
-
29
-
ns
VDD=50V,VGS=10V,ID=100A,
RG,ext=3.5Ω
Rise time
tr
-
15
-
ns
VDD=50V,VGS=10V,ID=100A,
RG,ext=3.5Ω
Turn-off delay time
td(off)
-
70
-
ns
VDD=50V,VGS=10V,ID=100A,
RG,ext=3.5Ω
Fall time
tf
-
48
-
ns
VDD=50V,VGS=10V,ID=100A,
RG,ext=3.5Ω
Unit
Note/TestCondition
Output capacitance1)
1)
Max.
Table6Gatechargecharacteristics2)
Parameter
Symbol
Gate to source charge
Gate charge at threshold
Values
Min.
Typ.
Max.
Qgs
-
52
-
nC
VDD=50V,ID=100A,VGS=0to10V
Qg(th)
-
35
-
nC
VDD=50V,ID=100A,VGS=0to10V
Gate to drain charge
Qgd
-
33
50
nC
VDD=50V,ID=100A,VGS=0to10V
Switching charge
Qsw
-
50
-
nC
VDD=50V,ID=100A,VGS=0to10V
Gate charge total
Qg
-
166
208
nC
VDD=50V,ID=100A,VGS=0to10V
Gate plateau voltage
Vplateau
-
4.4
-
V
VDD=50V,ID=100A,VGS=0to10V
Output charge1)
Qoss
-
210
279
nC
VDS=50V,VGS=0V
1)
1)
1)
2)
Defined by design. Not subject to production test.
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.2.0,2021-02-02
OptiMOSTM5Power-Transistor,100V
IPTC015N10NM5
Table7Reversediode
Parameter
Symbol
Diode continuous forward current
Values
Unit
Note/TestCondition
299
A
TC=25°C
-
1416
A
TC=25°C
-
0.85
1
V
VGS=0V,IF=100A,Tj=25°C
trr
-
90
-
ns
VR=50V,IF=50A,diF/dt=100A/µs
Qrr
-
220
-
nC
VR=50V,IF=50A,diF/dt=100A/µs
Min.
Typ.
Max.
IS
-
-
Diode pulse current
IS,pulse
-
Diode forward voltage
VSD
Reverse recovery time
Reverse recovery charge
Final Data Sheet
5
Rev.2.0,2021-02-02
OptiMOSTM5Power-Transistor,100V
IPTC015N10NM5
4Electricalcharacteristicsdiagrams
Diagram2:Draincurrent
400
400
350
350
300
300
250
250
ID[A]
Ptot[W]
Diagram1:Powerdissipation
200
200
150
150
100
100
50
50
0
0
25
50
75
100
125
150
175
0
200
0
25
50
75
TC[°C]
100
125
150
Ptot=f(TC)
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
4
200
101
10
103
1 µs
10 µs
102
100 µs
101
1 ms
100
ZthJC[K/W]
ID[A]
175
TC[°C]
10 ms
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10-1
0
10
DC
10-2
10-1
10-2
10-1
100
101
102
103
10-3
10-5
10-4
VDS[V]
10-2
10-1
100
tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tp);parameter:D=tp/T
6
Rev.2.0,2021-02-02
OptiMOSTM5Power-Transistor,100V
IPTC015N10NM5
Diagram5:Typ.outputcharacteristics
1500
10 V 8 V
Diagram6:Typ.drain-sourceonresistance
5
7V
1250
4
6V
750
RDS(on)[mΩ]
ID[A]
1000
3
4.5 V
5V
6V
2
7V
500
8V
10 V
1
5V
250
4.5 V
0
0
1
2
3
4
0
5
0
100
200
300
VDS[V]
400
500
600
700
800
ID[A]
ID=f(VDS),Tj=25°C;parameter:VGS
RDS(on)=f(ID),Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.drain-sourceonresistance
1500
5
1250
4
RDS(on)[mΩ]
ID[A]
1000
750
3
175 °C
2
500
25 °C
1
250
175 °C
25 °C
0
0
1
2
3
4
5
6
7
VGS[V]
0
2
4
6
8
10
VGS[V]
ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
0
RDS(on)=f(VGS),ID=100A;parameter:Tj
7
Rev.2.0,2021-02-02
OptiMOSTM5Power-Transistor,100V
IPTC015N10NM5
Diagram9:Normalizeddrain-sourceonresistance
Diagram10:Typ.gatethresholdvoltage
2.0
4.0
3.5
3.0
2.5
1.2
VGS(th)[V]
RDS(on)(normalizedto25°C)
1.6
0.8
2.0
2750 µA
1.5
275 µA
1.0
0.4
0.5
0.0
-80
-40
0
40
80
120
160
0.0
-80
200
-40
0
40
Tj[°C]
80
120
160
200
Tj[°C]
RDS(on)=f(Tj),ID=100A,VGS=10V
VGS(th=f(Tj),VGS=VDS;parameter:ID
Diagram11:Typ.capacitances
Diagram12:Forwardcharacteristicsofreversediode
5
104
10
25 °C
25 °C, max
175 °C
175 °C, max
104
Ciss
IF[A]
C[pF]
103
Coss
103
102
102
Crss
101
0
20
40
60
80
100
101
0.00
0.25
VDS[V]
0.75
1.00
1.25
1.50
VSD[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
0.50
IF=f(VSD);parameter:Tj
8
Rev.2.0,2021-02-02
OptiMOSTM5Power-Transistor,100V
IPTC015N10NM5
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
3
10
10
20 V
50 V
80 V
8
102
6
VGS[V]
IAV[A]
25 °C
100 °C
4
1
10
150 °C
2
100
100
101
102
103
tAV[µs]
0
0
25
50
75
100
125
150
175
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj,start
VGS=f(Qgate),ID=100Apulsed,Tj=25°C;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Diagram Gate charge waveforms
108
106
VBR(DSS)[V]
104
102
100
98
96
-80
-40
0
40
80
120
160
200
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA
Final Data Sheet
9
Rev.2.0,2021-02-02
OptiMOSTM5Power-Transistor,100V
IPTC015N10NM5
5PackageOutlines
PACKAGE - GROUP
NUMBER:
REVISION: 01
DIMENSIONS
A
A1
b
c
D
D1
E
E1
E2
e
e1
L
P
PG-HDSOP-16-U01
DATE: 18.12.2020
MILLIMETERS
MIN.
MAX.
2.25
2.35
0.01
0.16
0.60
0.80
0.40
0.60
9.70
10.10
8.20
8.40
14.80
15.20
10.00
10.30
5.57
5.77
1.20
8.40
1.40
1.60
2.90
3.10
Figure1OutlinePG-HDSOP-16,dimensionsinmm
Final Data Sheet
10
Rev.2.0,2021-02-02
OptiMOSTM5Power-Transistor,100V
IPTC015N10NM5
RevisionHistory
IPTC015N10NM5
Revision:2021-02-02,Rev.2.0
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2021-02-02
Release of final version
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Final Data Sheet
11
Rev.2.0,2021-02-02