IRF7456TRPBF-1

IRF7456PbF-1 SMPS MOSFET VDS RDS(on) max (@VGS = 10V) 20 V 0.0065 Ω 41 nC 16 A Qg (typical) ID (@TA = 25°C) HEXFET® Power MOSFET A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 Top View Applications l High Frequency DC-DC Converters with Synchronous Rectification Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification Base Part Number Package Type IRF7456PbF-1 SO-8 ⇒ Standard Pack Form Tube/Bulk Tape and Reel Benefits Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Orderable Part Number Quantity 95 4000 IRF7456PbF-1 IRF7456TRPbF-1 Absolute Maximum Ratings Symbol Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ , TSTG Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipationƒ Maximum Power Dissipationƒ Linear Derating Factor Junction and Storage Temperature Range Max. Units 20 ± 12 16 13 130 2.5 1.6 0.02 -55 to + 150 V V A W W W/°C °C Thermal Resistance Parameter RθJA Max. Units 50 °C/W Maximum Junction-to-Ambient„ Typical SMPS Topologies l Telecom 48V Input Converters with Logic-Level Driven Synchronous Rectifiers Notes  through „ are on page 8 1 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 20, 2013 IRF7456PbF-1 Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 20 ––– ––– Static Drain-to-Source On-Resistance ––– ––– Gate Threshold Voltage 0.6 ––– Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage ––– Typ. Max. Units Conditions ––– ––– V VGS = 0V, ID = 250μA 0.024 ––– V/°C Reference to 25°C, ID = 1mA 0.00470.0065 VGS = 10V, ID = 16A ƒ Ω 0.00570.0075 VGS = 4.5V, ID = 13A ƒ 0.011 0.020 VGS = 2.8V, ID = 3.5A ƒ ––– 2.0 V VDS = VGS, ID = 250μA ––– 20 VDS = 16V, VGS = 0V μA ––– 100 VDS = 16V, VGS = 0V, TJ = 125°C ––– 200 VGS = 12V nA ––– -200 VGS = -12V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 44 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 41 9.7 18 20 25 50 52 3640 1570 330 Max. Units Conditions ––– S VDS = 10V, ID = 16A 62 ID = 16A 15 nC VDS = 16V 27 VGS = 5.0V, ƒ ––– VDD = 10V ––– ID = 1.0A ns ––– RG = 6.0Ω ––– VGS = 4.5V ƒ ––– VGS = 0V ––– VDS = 15V ––– pF ƒ = 1.0MHz Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Typ. Max. Units ––– ––– ––– 250 16 0.25 mJ A mJ Diode Characteristics IS ISM VSD trr Qrr 2 Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge www.irf.com © 2013 International Rectifier Min. Typ. Max. Units ––– ––– 2.5 ––– ––– 130 ––– ––– ––– ––– 48 74 1.2 72 110 A V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = 2.5A, VGS = 0V TJ = 25°C, IF = 2.5A di/dt = 100A/μs ƒ Submit Datasheet Feedback D S ƒ November 20, 2013 IRF7456PbF-1 1000 1000 VGS 15V 10V 4.5V 3.0V 2.7V 2.5V 2.25V BOTTOM 2.0V 100 100 10 1 2.0V 0.1 0.1 20μs PULSE WIDTH TJ = 25 °C 1 10 10 2.0V 1 0.1 100 Fig 1. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) 100.0 ID, Drain-to-Source Current (Α) T J = 150°C 10.0 T J = 25°C 1.0 VDS = 15V 20μs PULSE WIDTH 2.2 2.4 2.6 2.8 3.0 1 10 100 Fig 2. Typical Output Characteristics 2.0 0.1 20μs PULSE WIDTH TJ = 150 °C VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) 2.0 VGS 15V 10V 4.5V 3.0V 2.7V 2.5V 2.25V BOTTOM 2.0V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 3.2 ID = 16A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 3 www.irf.com © 2013 International Rectifier Fig 4. Normalized On-Resistance Vs. Temperature Submit Datasheet Feedback November 20, 2013 IRF7456PbF-1 6000 4000 VGS , Gate-to-Source Voltage (V) 5000 Ciss 3000 Coss 2000 1000 ID = 16A VDS = 16V 10 8 6 4 2 Crss 0 1 10 0 100 FOR TEST CIRCUIT SEE FIGURE 14 13 0 20 VDS , Drain-to-Source Voltage (V) 60 80 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 100 OPERATION IN THIS AREA LIMITED BY RDS(on) I D , Drain Current (A) TJ = 150 ° C 10us 100 10 TJ = 25 ° C 1 100us 1ms 10 10ms 0.1 0.2 V GS = 0 V 0.6 1.0 1.4 1.8 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 40 QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage ISD , Reverse Drain Current (A) C, Capacitance (pF) 12 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd www.irf.com © 2013 International Rectifier 2.2 TA = 25 ° C TJ = 150 ° C Single Pulse 1 0.1 1 10 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area Submit Datasheet Feedback November 20, 2013 100 IRF7456PbF-1 20 V DS ID , Drain Current (A) V GS 15 RD D.U.T. RG + -V DD 10V 4.5V 10 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit 5 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( °C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature tr td(on) t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJA ) 100 D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 0.1 0.01 0.0001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 20, 2013 IRF7456PbF-1 RDS(on) , Drain-to -Source On Resistance (Ω) RDS (on) , Drain-to-Source On Resistance (Ω) 0.0062 VGS = 4.5V 0.0058 0.0054 0.0050 VGS = 10V 0.0046 0 20 40 60 80 100 0.012 0.010 0.008 ID = 16A 0.006 0.004 0 ID , Drain Current (A) 4 8 12 16 VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage Current Regulator Same Type as D.U.T. QG VGS QGS .3μF D.U.T. + V - DS QGD 600 VG VGS 3mA Charge IG ID Current Sampling Resistors Fig 14a&b. Basic Gate Charge Test Circuit and Waveform 15V V(BR)DSS tp L VDS D.U.T RG IAS 20V tp I AS DRIVER + - VDD 0.01Ω Fig 15a&b. Unclamped Inductive Test circuit and Waveforms 6 www.irf.com © 2013 International Rectifier A EAS , Single Pulse Avalanche Energy (mJ) 50KΩ .2μF 12V TOP 500 BOTTOM ID 7.2A 10A 16A 400 300 200 100 0 25 50 75 100 125 Starting TJ , Junction Temperature ( °C) Fig 15c. Maximum Avalanche Energy Vs. Drain Current Submit Datasheet Feedback November 20, 2013 150 IRF7456PbF-1 SO-8 Package Outline(Mosfet & Fetky) Dimensions are shown in milimeters (inches) D DIM B 5 A 8 6 7 6 H E 1 2 3 0.25 [.010] 4 A MIN .0532 .0688 1.35 1.75 A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BASIC e1 6X e e1 0.25 [.010] MAX 1.27 BAS IC .025 BASIC 0.635 BASIC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0° 8° 0° 8° K x 45° A C 8X b MILLIMET ERS MAX A 5 INCHES MIN A1 y 0.10 [.004] 8X L 8X c 7 C A B F OOTPRINT NOT ES: 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENSION: MILLIMET ER 8X 0.72 [.028] 3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUSIONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUSIONS NOT T O EXCEED 0.25 [.010]. 6.46 [.255] 7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O A S UBS T RAT E. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking Information EXAMPLE: T HIS IS AN IRF7101 (MOSFET) INT ERNATIONAL RECTIFIER LOGO XXXX F 7101 DAT E CODE (YWW) P = DIS GNATES LEAD - FREE PRODUCT (OPT IONAL) Y = LAST DIGIT OF THE YEAR WW = WEEK A = AS S EMBLY S ITE CODE LOT CODE PART NUMBER Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 7 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 20, 2013 IRF7456PbF-1 SO-8 Tape and Reel (Dimensions are shown in milimeters (inches)) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOW N IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ † Qualification information Industrial Qualification level (per JE DEC JE S D47F Moisture Sensitivity Level SO-8 RoHS compliant †† guidelines) MS L1 †† (per JE DE C J-S TD-020D ) Yes † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability †† Applicable version of JEDEC standard at the time of product release Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting TJ = 25°C, L = 2.0mH, RG = 25Ω, IAS = 16A. ƒ Pulse width ≤ 300μs; duty cycle ≤ 2%. „ When mounted on 1 inch square copper board, t