IRF9Z24NS

PD - 91742A IRF9Z24NS/L HEXFET® Power MOSFET Advanced Process Technology Surface Mount (IRF9Z24NS) l Low-profile through-hole (IRF9Z24NL) l 175°C Operating Temperature l P-Channel l Fast Switching l Fully Avalanche Rated Description l D l VDSS = -55V RDS(on) = 0.175Ω G Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF9Z24NL) is available for low-profile applications. ID = -12A S D 2 P ak T O -26 2 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V… Continuous Drain Current, VGS @ -10V… Pulsed Drain Current … Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚… Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ… Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. Units -12 -8.5 -48 3.8 45 0.30 ± 20 96 -7.2 4.5 -5.0 -55 to + 175 A W W W/°C V mJ A mJ V/ns °C 300 (1.6mm from case ) Thermal Resistance Parameter RθJC RθJA www.irf.com Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)** Typ. Max. Units ––– ––– 3.3 40 °C/W 1 7/16/99 IRF9Z24NS/L Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS ∆V(BR)DSS/∆TJ Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time LS Internal Source Inductance Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance IGSS Min. -55 ––– ––– -2.0 2.5 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– -0.05 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 13 55 23 37 Max. Units Conditions ––– V VGS = 0V, ID = -250µA ––– V/°C Reference to 25°C, ID = -1mA… 0.175 Ω VGS = -10V, ID = -7.2A „ -4.0 V VDS = VGS, ID = -250µA ––– S VDS = -25V, ID = -7.2A -25 VDS = -55V, VGS = 0V µA -250 VDS = -44V, VGS = 0V, T J = 150°C 100 VGS = 20V nA -100 VGS = -20V 19 ID = -7.2A 5.1 nC VDS = -44V 10 VGS = -10V, See Fig. 6 and 13 „… ––– VDD = -28V ––– ID = -7.2A ns ––– RG = 24Ω ––– RD = 3.7Ω, See Fig. 10 „… Between lead, nH 7.5 and center of die contact 350 ––– VGS = 0V 170 ––– pF VDS = -25V 92 ––– ƒ = 1.0MHz, See Fig. 5… Source-Drain Ratings and Characteristics IS ISM VSD trr Q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) • Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– -12 showing the A G integral reverse ––– ––– -48 p-n junction diode. S ––– ––– -1.6 V TJ = 25°C, IS = -7.2A, VGS = 0V „ ––– 47 71 ns TJ = 25°C, IF = -7.2A ––– 84 130 nC di/dt = -100A/µs „… Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:  Repetitive rating; pulse width limited by „ Pulse width ≤ 300µs; duty cycle ≤ 2%. max. junction temperature. ( See fig. 11 ) ‚ Starting TJ = 25°C, L = 3.7mH … Uses IRF9Z24N data and test conditions RG = 25Ω, IAS = -7.2A. (See Figure 12) ƒ ISD ≤ -7.2A, di/dt ≤ -280A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C ** When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. 2 www.irf.com IRF9Z24NS/L 100 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOT TOM - 4.5V 10 1 10 -4 .5 V -4.5 V A 1 0.1 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP -ID , Drain-to-Source Current (A ) -ID , D rain-to-S ou rc e C urre nt (A ) 100 2 0µ s P U LS E W ID TH TTcJ = 225°C 5°C TO P 10 1 100 0.1 1 -VD S , D rain-to-S ourc e V oltage (V ) 2.0 R D S (on) , Drain-to-S ource O n Resistance (N orm alized) -I D , D rain-to-S ource C urrent (A) TJ = 25 °C TJ = 1 7 5 °C V DS = -2 5 V 2 0µ s P U L S E W ID TH 4 5 6 7 8 9 -VG S , Ga te -to-Source Volta ge (V) Fig 3. Typical Transfer Characteristics www.irf.com A 100 Fig 2. Typical Output Characteristics 100 1 10 -VD S , D rain-to-S ource V oltage (V ) Fig 1. Typical Output Characteristics 10 2 0µ s P U LS E W ID TH TTCJ = 1175°C 75 °C 10 A I D = -12 A 1.5 1.0 0.5 VG S = -1 0V 0.0 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 180 T J , Junction T em perature (°C ) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF9Z24NS/L V GS C is s C rs s C o ss C , Capacitance (pF) 600 500 C iss 400 C oss = = = = 20 0V , f = 1M H z C g s + C g d , Cd s S H O R T E D C gd C d s + C gd -V G S , G ate-to-S ource V oltage (V ) 700 300 C rss 200 100 0 10 V D S = -44 V V D S = -28 V 16 12 8 4 FO R TE S T CIR C U IT S E E FIG U R E 1 3 0 A 1 I D = -7 .2 A 0 100 V D S , D rain-to-S ourc e V oltage (V ) 15 20 A 25 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 O P E R A TIO N IN T H IS A R E A L IM IT E D B Y R D S (o n) 10µ s -I D , D rain C urrent (A ) -I S D , Reverse D rain Current (A ) 10 Q G , Total G ate C harge (nC ) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage TJ = 15 0°C 10 TJ = 2 5°C 1 100µs 10 1m s V G S = 0V 0.1 0.4 4 5 0.6 0.8 1.0 1.2 1.4 1.6 A 1.8 T C = 25 °C T J = 17 5°C S ing le P u lse 1 1 10m s 10 100 -VS D , S ourc e-to-D rain V oltage (V ) -VD S , D rain-to-S ourc e V oltage (V ) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com A IRF9Z24NS/L 12 RD VDS -ID , D rain C urrent (A m ps ) VGS 9 D.U.T. RG + VDD -10V 6 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 10a. Switching Time Test Circuit 3 td(on) tr t d(off) tf VGS A 0 25 50 75 100 125 150 10% 175 TC , C as e Tem perature (°C ) 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms Therm al R esp ons e (Z thJ C ) 10 D = 0 .5 0 1 0 .2 0 0 .1 0 0 .0 5 0.1 PD M 0 .0 2 0 .0 1 t S IN G L E P U L S E (T H E R M A L R E S P O N S E ) 1 t2 N o tes : 1 . D u ty f ac to r D = t 1 /t 2 2 . P e a k TJ = P D M x Z th J C + T C 0.01 0.00001 0.0001 0.001 0.01 0.1 A 1 t 1 , R e c ta n g u la r P u lse D u ra tio n (s e c ) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF9Z24NS/L D .U .T RG A IA S -2 0 V tp VD D D R IV E R 0 .0 1Ω 15V Fig 12a. Unclamped Inductive Test Circuit E A S , S ingle Pulse Avalanc he E nergy (m J) 250 L VD S B O T TO M 200 150 100 50 0 A 25 IAS ID -2 .9A -5 .1A -7.2 A TOP 50 75 100 125 150 175 S tarting T J , J unc tion T em perature (°C ) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF -10V QGS QGD D.U.T. +VDS VGS VG -3mA Charge Fig 13a. Basic Gate Charge Waveform 6 IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRF9Z24NS/L Peak Diode Recovery dv/dt Test Circuit + D.U.T* ƒ Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + ‚ - - „ +  • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test RG VGS * + - VDD Reverse Polarity of D.U.T for P-Channel Driver Gate Drive P.W. D= Period P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode [VDD] Forward Drop Inductor Curent Ripple ≤ 5% [ ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For P-Channel HEXFETS www.irf.com 7 IRF9Z24NS/L D2Pak Package Outline 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) M AX. -A- 1.3 2 (.05 2) 1.2 2 (.04 8) 2 1.7 8 (.07 0) 1.2 7 (.05 0) 1 1 0.16 (.4 00 ) RE F. -B - 4.69 (.1 85) 4.20 (.1 65) 6.47 (.2 55 ) 6.18 (.2 43 ) 3 15 .4 9 (.6 10) 14 .7 3 (.5 80) 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 5 .28 (.20 8) 4 .78 (.18 8) 3X 1.40 (.0 55) 1.14 (.0 45) 5 .08 (.20 0) 0.5 5 (.022 ) 0.4 6 (.018 ) 0 .93 (.03 7 ) 3X 0 .69 (.02 7 ) 0 .25 (.01 0 ) M 8.8 9 (.3 50 ) R E F. 1.3 9 (.0 5 5) 1.1 4 (.0 4 5) B A M M IN IM U M R E CO M M E ND E D F O O TP R IN T 1 1.43 (.4 50 ) NO TE S: 1 D IM EN S IO N S A FTER SO L D ER D IP. 2 D IM EN S IO N IN G & TO LE RA N C IN G PE R A N S I Y1 4.5M , 198 2. 3 C O N TRO L LIN G D IM EN SIO N : IN C H . 4 H E ATSINK & L EA D D IM EN S IO N S D O N O T IN C LU D E B UR R S. LE A D A SS IG N M E N TS 1 - G A TE 2 - D R AIN 3 - S O U RC E 8.89 (.3 50 ) 17 .78 (.70 0) 3 .8 1 (.15 0) 2 .08 (.08 2) 2X 2.5 4 (.100 ) 2X Part Marking Information D2Pak IN TE R N A TIO N A L R E C T IF IE R LO G O A S S E M B LY LO T C O D E 8 A PART NUM BER F530S 9 24 6 9B 1M DATE CODE (Y YW W ) YY = Y E A R W W = W EEK www.irf.com IRF9Z24NS/L Package Outline TO-262 Outline Part Marking Information TO-262 www.irf.com 9 IRF9Z24NS/L Tape & Reel Information D2Pak TR R 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 (.1 6 1 ) 3 .9 0 (.1 5 3 ) F E E D D IRE CTIO N 1 .8 5 (.0 7 3 ) 1 .6 5 (.0 6 5 ) 1 .60 (.06 3) 1 .50 (.05 9) 1 1 .6 0 (.4 5 7 ) 1 1 .4 0 (.4 4 9 ) 0 .3 68 (.0 1 4 5 ) 0 .3 42 (.0 1 3 5 ) 1 5 .4 2 (.6 0 9 ) 1 5 .2 2 (.6 0 1 ) 2 4 .3 0 (.9 5 7 ) 2 3 .9 0 (.9 4 1 ) TR L 10 .9 0 (.42 9) 10 .7 0 (.42 1) 1 .75 (.06 9 ) 1 .25 (.04 9 ) 4 .7 2 (.1 3 6) 4 .5 2 (.1 7 8) 16 .10 (.63 4 ) 15 .90 (.62 6 ) F E E D D IRE C TIO N 13.50 (.532 ) 12.80 (.504 ) 2 7.4 0 (1.079) 2 3.9 0 (.9 41) 4 33 0.00 (1 4.1 73) MA X. NO TES : 1. C O M F O R M S TO E IA -4 18. 2. C O N TR O LLIN G D IM E N S IO N : M ILL IM ET ER . 3. D IM E N S IO N ME A S U R E D @ H U B . 4. IN C LU D E S F LA N G E D IS TO R T IO N @ O U T E R E D G E . 60.00 (2.3 62) MIN . 26 .40 (1.03 9) 24 .40 (.961 ) 3 3 0.40 (1.1 97) MAX. 4 WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 7/99 10 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/