IRFH7004TR2PBF

StrongIRFET™ IRFH7004PbF HEXFET® Power MOSFET Applications l l l l l l l l l Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC Inverters VDSS RDS(on) typ. max. ID (Silicon Limited) 40V 1.1mΩ 1.4mΩ 259A ID (Package Limited) 100A c Benefits l l Base Part Number Package Type IRFH7004PBF PQFN 5mm x 6mm PQFN 5X6 mm Standard Pack Form Quantity Tape and Reel 4000 6.0 IRFH7004TRPBF 300 250 4.0 T J = 125°C 2.0 Limited By Package 200 150 100 50 T J = 25°C 0.0 0 4 6 8 10 12 14 16 18 20 25 Fig 1. Typical On-Resistance vs. Gate Voltage www.irf.com © 2015 International Rectifier 50 75 100 125 150 T C , Case Temperature (°C) VGS, Gate -to -Source Voltage (V) 1 Orderable Part Number ID = 100A ID, Drain Current (A) l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability RoHS Compliant containing no Lead, no Bromide, and no Halogen RDS(on), Drain-to -Source On Resistance (m Ω) l Fig 2. Maximum Drain Current vs. Case Temperature Submit Datasheet Feedback March 17, 2015 IRFH7004PbF Absolute Maximum Ratings Symbol Parameter Max. c c ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 259 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 164 ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Wire Bond Limited) 100 IDM Pulsed Drain Current 1247 d Units A Maximum Power Dissipation 156 W Linear Derating Factor 1.3 W/°C VGS Gate-to-Source Voltage ± 20 V TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range PD @TC = 25°C Avalanche Characteristics Single Pulse Avalanche Energy EAS (Thermally limited) e Single Pulse Avalanche Energy l Avalanche Currentd Repetitive Avalanche Energy d EAS (Thermally limited) IAR EAR °C mJ 191 479 A See Fig. 14, 15, 22a, 22b mJ Thermal Resistance Symbol RθJC (Bottom) RθJC (Top) k Junction-to-Case k Parameter Junction-to-Case j Junction-to-Ambient j Junction-to-Ambient RθJA RθJA (