IRG4BC30K-S

PD - 91619B IRG4BC30K-S Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous generations VCES = 600V VCE(on) typ. = 2.21V G @VGE = 15V, IC = 16A E n-channel Benefits • As a Freewheeling Diode we recommend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT • Latest generation 4 IGBTs offer highest power density motor controls possible • This part replaces the IRGBC30K-S and IRGBC30M-S devices D 2 Pak Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM tsc VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. Units 600 28 16 58 58 10 ±20 260 100 42 -55 to +150 V A µs V mJ W °C 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1N•m) Thermal Resistance Parameter RθJC RθCS RθJA Wt www.irf.com Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient ( PCB Mounted,steady-state)V Weight Typ. Max. ––– 0.5 ––– 1.44 1.2 ––– 40 ––– Units °C/W g 1 4/24/2000 IRG4BC30K-S Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 — Emitter-to-Collector Breakdown Voltage T 18 — ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.54 — 2.21 — 2.21 VCE(ON) Collector-to-Emitter Saturation Voltage — 2.88 — 2.36 VGE(th) Gate Threshold Voltage 3.0 — ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -12 gfe Forward Transconductance U 5.4 8.1 — — ICES Zero Gate Voltage Collector Current — — — — IGES Gate-to-Emitter Leakage Current — — V(BR)CES V(BR)ECS Max. Units Conditions — V VGE = 0V, IC = 250µA — V VGE = 0V, IC = 1.0A — V/°C VGE = 0V, IC = 1.0mA — IC = 14A VGE = 15V 2.7 IC = 16A V — IC = 28A See Fig.2, 5 — IC = 16A , TJ = 150°C 6.0 VCE = VGE, IC = 250µA — mV/°C VCE = VGE, IC = 250µA — S VCE = 100V, IC = 16A 250 VGE = 0V, VCE = 600V 2.0 µA VGE = 0V, VCE = 10V, TJ = 25°C 1100 VGE = 0V, VCE = 600V, TJ = 150°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time td(on) tr td(off) tf Ets Eon Eoff Ets LE Cies Coes Cres Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. — — — — — — — — — — 10 Typ. 67 11 25 26 28 130 120 0.36 0.51 0.87 — — — — — — — — — — — — — 25 29 190 190 1.2 0.26 0.36 0.62 7.5 920 110 27 Max. Units Conditions 100 IC = 16A 16 nC VCC = 400V See Fig.8 37 VGE = 15V — — TJ = 25°C ns 200 IC = 16A, VCC = 480V 170 VGE = 15V, RG = 23Ω — Energy losses include "tail" — mJ See Fig. 9,10,14 1.3 — µs VCC = 400V, TJ = 125°C VGE = 15V, RG = 23Ω , VCPK < 500V — TJ = 150°C, — IC = 16A, VCC = 480V ns — VGE = 15V, RG = 23Ω — Energy losses include "tail" — mJ See Fig. 11,14 — TJ = 25°C, VGE = 15V, RG = 23Ω — mJ IC = 14A, VCC = 480V — Energy losses include "tail" — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz Details of note Q through V are on the last page 2 www.irf.com IRG4BC30K-S 6.0 F o r b o th : 5.0 Load Current ( A ) T ria n g u la r w a ve : D uty c yc le: 50% TJ = 125° C Ts ink = 90°C 55°C G ate drive as spec ified P o w e r D is s ip a tio n = 1 .8 W C la m p vo l ta g e : 8 0 % o f ra te d 4.0 S q u a re wave : 3.0 6 0 % o f ra te d v o lta g e 2.0 Id e al d io de s 1.0 A 0.0 0.1 1 10 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) I C , Collector-to-Emitter Current (A) TJ = 25 o C  TJ = 150 o C  10 1 V = 15V  20µs PULSE WIDTH GE 0.1 1 10 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com I C , Collector-to-Emitter Current (A) 100 100 TJ = 150 o C  10 TJ = 25 o C  1 V = 50V  5µs PULSE WIDTH CC 0.1 5 10 15 VGE , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 IRG4BC30K-S 30 4.0 V = 15V  80 us PULSE WIDTH VCE , Collector-to-Emitter Voltage(V) GE Maximum DC Collector Current(A) 25 20 15 10 5 0 25 50 75 100 125 150  I C = 32 A 3.0  I C = 16 A I 8A C = 8.0A 2.0 1.0 -60 -40 -20 TC , Case Temperature ( ° C) 0 20 40 60 80 100 120 140 160 JunctionTemperature Temperature ( °C) TTJJ, ,Junction ( °C ) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thJC ) 10 1 D = 0.50  0.20 P DM 0.10 0.1 0.01 0.00001 0.05 0.02 0.01 t1 t2 SINGLE PULSE  (THERMAL RESPONSE) 0.0001  Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC30K-S VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc C, Capacitance (pF) 1200 Cies  900 600 C oes 300 20 VGE , Gate-to-Emitter Voltage (V)  1500  VCC = 400V I C = 16A 16 12 8 4 C res 0 1 10 0 100 0 VCE , Collector-to-Emitter Voltage (V) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage  10 V CC = 480V V GE = 15V TJ = 25 ° C I C = 16A 1.0 0.5 0 10 20 30 40 RG , Gate Resistance (Ohm) Ω Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 40 60 80 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Total Switching Losses (mJ) Total Switching Losses (mJ) 1.5 20 QG , Total Gate Charge (nC) 50  RG = Ohm 23Ω VGE = 15V VCC = 480V  IC = 32 A  IC = 16 A 1  IC = 8.0A 8A 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4BC30K-S  RG TJ VCC 3.2 VGE 100 Ω = 23 Ohm = 150 ° C = 480V = 15V I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) 4.0 2.4 1.6 0.8  VGE = 20V T J = 125 oC 10 SAFE OPERATING AREA 1 0.0 0 8 16 24 32 1 40 10 100 1000 VCE , Collector-to-Emitter Voltage (V) I C , Collector-to-emitter Current (A) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA Tape & Reel Information D2Pak TR R 1 .6 0 ( .0 6 3 ) 1 .5 0 ( .0 5 9 ) 4 .1 0 ( .1 6 1 ) 3 .9 0 ( .1 5 3 ) F E E D D I RE C T IO N 1 .8 5 (.0 7 3 ) 1 .6 5 (.0 6 5 ) 1.6 0 (.0 6 3 ) 1.5 0 (.0 5 9 ) 0 .3 6 8 (.0 1 4 5 ) 0 .3 4 2 (.0 1 3 5 ) 1 1 .6 0 (.45 7 ) 1 1 .4 0 (.44 9 ) 1 5.4 2 (.6 0 9 ) 1 5.2 2 (.6 0 1 ) 2 4 .3 0 (.95 7 ) 2 3 .9 0 (.94 1 ) TRL 1 0 .9 0 (.42 9 ) 1 0 .7 0 (.42 1 ) 1.7 5 (.0 6 9 ) 1.2 5 (.0 4 9 ) 4 .7 2 (.1 3 6 ) 4 .5 2 (.1 7 8 ) 1 6 .1 0 (.63 4 ) 1 5 .9 0 (.62 6 ) F E E D D IR E C T I ON 1 3.50 (.53 2) 1 2.80 (.50 4) 2 7.4 0 ( 1.0 7 9) 2 3.9 0 ( .94 1 ) 4 3 3 0.00 ( 14 .1 73 ) M AX. N O TE S : 1. C O MF O R M S T O EIA- 41 8. 2. C O N TR O LL IN G D IM EN SIO N : M IL LIM ET ER . 3. D IM EN S IO N M EAS UR ED @ H U B. 4. IN C L U D E S FL AN G E D IST O R T IO N @ O U T ER E D G E. 6 6 0.00 (2 .3 62) M IN . 26 .4 0 (1 .03 9 ) 24 .4 0 (.9 61 ) 3 3 0.4 0 (1.19 7) MA X. 4 www.irf.com IRG4BC30K-S L D .U .T. VC * 50V RL = 0 - 480V 1 00 0V 480V 4 X I C@25°C 480µF 960V Q R * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Fig. 13b - Pulsed Collector Load Test Circuit Current Test Circuit IC L D river* D .U .T. VC Fig. 14a - Switching Loss Test Circuit 50V 1000V Q * Driver same type as D.U.T., VC = 480V R S Q R 90 % 10 % S VC 90 % Fig. 14b - Switching Loss t d (o ff) 1 0% IC 5% Waveforms tf tr t d (o n ) t=5µ s Eon E o ff E ts = (E o n +E o ff ) www.irf.com 7 IRG4BC30K-S Notes: Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 23Ω, (See fig. 13a) T Pulse width ≤ 80µs; duty factor ≤ 0.1%. U Pulse width 5.0µs, single shot. V When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. S Repetitive rating; pulse width limited by maximum junction temperature. D2Pak Package Outline 1 0 .5 4 (.4 1 5 ) 1 0 .2 9 (.4 0 5 ) 1 .4 0 (.0 5 5 ) M A X. -A - 1 .3 2 (.0 5 2 ) 1 .2 2 (.0 4 8 ) 2 1 .7 8 (.0 7 0 ) 1 .2 7 (.0 5 0 ) 1 1 0 .1 6 (.4 0 0 ) REF . -B - 4 .6 9 (.1 8 5 ) 4 .2 0 (.1 6 5 ) 6 .4 7 (.2 5 5 ) 6 .1 8 (.2 4 3 ) 3 1 5 .4 9 (.6 1 0 ) 1 4 .7 3 (.5 8 0 ) 2 .7 9 (.1 1 0 ) 2 .2 9 (.0 9 0 ) 2 .6 1 (.1 0 3 ) 2 .3 2 (.0 9 1 ) 5 .2 8 (.2 0 8 ) 4 .7 8 (.1 8 8 ) 3X 1 .4 0 (.0 5 5 ) 1 .1 4 (.0 4 5 ) 5 .0 8 (.2 0 0 ) 0 .5 5 (.0 2 2 ) 0 .4 6 (.0 1 8 ) 0 .9 3 (.0 3 7 ) 3X 0 .6 9 (.0 2 7 ) 0 .2 5 (.0 1 0 ) M 8 .8 9 (.3 5 0 ) R E F. 1 .3 9 (.0 5 5 ) 1 .1 4 (.0 4 5 ) B A M M IN IM U M R E C O M M E N D E D F O O T P R IN T 1 1 .4 3 (.4 5 0 ) NOTES: 1 D IM E N S IO N S A F T E R S O L D E R D IP . 2 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 3 C O N T R O L L IN G D IM E N S IO N : IN C H . 4 H E A T S IN K & L E A D D IM E N S IO N S D O N O T IN C L U D E B U R R S . L E A D A S S IG N M E N T S 1 - G A TE 2 - D R A IN 3 - S OURCE 8 .8 9 (.3 5 0 ) 1 7 .7 8 (.7 0 0 ) 3 .8 1 (.1 5 0 ) 2 .0 8 (.0 8 2 ) 2X 2 .5 4 (.1 0 0 ) 2X IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 10/00 8 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/