IRG5K75HH06E

IRG5K50P5K50PM06E IRG5K75HH06E IGBT H-Bridge POWIR ECO 2™ Package VCES = 600V IC = 75A at TC = 80°C tSC ≥ 10µsec VCE(ON) = 1.80V at IC = 75A Applications：  Industrial Motor Drive Uninterruptible Power Supply Welding and Cutting Machine Switched Mode Power Supply Induction Heating DC Inverter Drive      Features Benefits Low VCE(ON) and Switching Losses High Efficiency in a Wide Range of Applications 100% RBSOA Tested 10µsec Short Circuit Safe Operating Area Rugged Transient Performance POWIR ECO 2™ Package Industry Standard Lead Free RoHS Compliant, Environmental Friendly Base Part Number Package Type Standard Pack Quantity Orderable Part Number IRG5K75HH06E POWIR ECO 2™ Box 80 IRG5K75HH06E Absolute Maximum Ratings of IGBT VCES Collector to Emitter Voltage 600 V VGES Continuous Gate to Emitter Voltage ±20 V IC Continuous Collector Current TC = 80°C 75 A TC = 25°C 140 A ICM Pulse Collector Current TJ = 150°C 150 A PD Maximum Power Dissipation (IGBT) TC = 25°C, TJ = 150°C 330 W TJ Maximum IGBT Junction Temperature 150 °C TJOP Maximum Operating Junction Temperature Range -40 to +150 °C Tstg Storage Temperature -40 to +125 °C 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG5K75HH06E Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified) Parameter Min. V(BR)CES Collector to Emitter Breakdown Voltage 600 VGE(th) Gate Threshold Voltage 3.5 VCE(ON) Collector to Emitter Saturation Voltage ICES Collector to Emitter Leakage Current IGES Gate to Emitter Leakage Current Typ. Max. Unit Test Conditions V VGE = 0V, IC = 1mA 4.5 5.5 V IC = 0.25mA, VCE = VGE 1.80 2.10 V TJ = 25°C V TJ = 125°C 2.00 IC = 75A, VGE = 15V 1 mA VGE = 0V, VCE = VCES 400 nA VGE = ±20V, VCE = 0 Max. Unit Switching Characteristics of IGBT Parameter Min. Typ. 105 td(on) Turn-on Delay Time tr Rise Time td(off) Turn-off Delay Time tf Fall Time Eon Turn-on Switching Loss Eoff Turn-off Switching Loss Qg Total Gate Charge 260 Cies Input Capacitance 3.6 Coes Output Capacitance 0.45 Cres Reverse Transfer Capacitance 0.18 RBSOA Reverse Bias Safe Operating Area SCSOA Short Circuit Safe Operating Area 2 100 90 90 240 250 90 110 0.52 0.93 0.90 1.43 ns ns ns ns mJ mJ nC nF www.irf.com © 2014 International Rectifier TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C VCC=300V, IC = 75A, RG = 20Ω, VGE=±15V, Inductive Load TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C VCE = 25V, VGE = 0V, f ＝1MHz, TJ = 25°C IC = 150A,VCC = 480V, VP =600V, RG = 15Ω, VGE = +15V to 0V, TJ = 150°C Trapezoid 10 Test Conditions μs VCC = 300V, VGE = 15V, TJ = 150°C Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG5K75HH06E Absolute Maximum Ratings of Freewheeling Diode VRRM IF IFM Repetitive Peak Reverse Voltage 600 Diode Continuous Forward Current, TC = 25°C 150 Diode Continuous Forward Current, TC = 80°C 75 Pulse Diode Current 150 V A A Electrical and Switching Characteristics of Freewheeling Diode Parameter VF Forward Voltage Irr Peak Reverse Recovery Current Qrr Reverse Recovery Charge Erec Reverse Recovery Energy Typ. Max. 1.50 1.80 1.50 40 Unit V A 50 2.9 µC 4.7 0.38 mJ 0.95 Test Conditions TJ = 25°C TJ = 125°C IF = 75A , VGE = 0V TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C IF＝75A, di/dt=840A/μs, Vrr = 300V, VGE = -15V TJ = 125°C NTC-Thermistor Characteristic Values Parameter Typ. R25 TC =25°C R/R TC =100°C，R100 =481Ω P25 TC =25°C B25/50 B25/80 Max. 5 Unit kΩ ±5 % 50 mW R2=R25 exp[B25/50(1/T2-1/(298.15K))] 3380 K R2=R25 exp[B25/80(1/T2-1/(298.15K))] 3440 K Module Characteristics Parameter Min. Typ. Max. Unit 2500 V Viso Isolation Voltage (All Terminals Shorted), f = 50Hz, 1minute RθJC Junction-to-Case (IGBT) 0.38 °C/W RθJC Junction-to-Case (Diode) 1.06 °C/W RθCS Case-To-Sink (Conductive Grease Applied) 0.1 °C/W M Mounting Screw: M6 G Weight 3 www.irf.com © 2014 International Rectifier 4.0 6.0 N·m 200 g Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG5K75HH06E 150 150 VGE =15V TJ =125°C 135 120 135 TJ =25°C 105 VGE =17V VGE =15V 105 VGE =13V VGE =11V 90 IC (A) 90 IC (A) TJ =125°C 120 75 60 75 45 45 30 30 15 15 0 0.0 0.4 0.8 1.2 1.6 2.0 VCE (V) 2.4 2.8 3.2 VGE =9V 60 0 0.0 3.6 Fig.1 Typical IGBT Saturation Characteristics 0.4 0.8 1.2 1.6 VCE (V) 2.0 2.4 2.8 3.2 Fig.2 Typical IGBT Output Characteristics 6 150 135 VGE =0V TJ =125°C 120 TJ =25°C 105 VCE= 0 V,f=1MHz Cies 5 Coes 4 C (nF) IF (A) 90 75 3 60 2 45 30 1 15 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VF (V) 1.4 1.6 1.8 0 2.0 Fig.3 Typical Freewheeling Diode Characteristics 5 10 VCE (V) 15 20 25 Fig. 4 Typical Capacitance Characteristics 3.0 4.5 VCC =300V,VGE =+/-15V, Rg =20 ohm,TJ =125°C 3.5 3.0 Eoff Eon 2.5 Erec VCC =300V,VGE =+/-15V, IC =75A,TJ =125°C 2.5 Eoff Eon 2.0 E (mJ) 4.0 E (mJ) 0 2.0 Erec 1.5 1.0 1.5 1.0 0.5 0.5 0.0 0 15 30 45 60 75 90 IC (A) 105 120 135 150 Fig.5 Typical Switching Loss vs. Collector Current 4 www.irf.com © 2014 International Rectifier 0.0 0 5 10 15 20 25 30 Rg () 35 40 45 50 Fig.6 Typical Switching Loss vs. Gate Resistance Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG5K75HH06E 120 Duty Cycle:50% TJ =125°C 105 150 TC =80°C 90 125 Rg=20 ohm,VGE =15V Load Current (A) 75 100 IC (A) Square Wave: 60 Vcc 45 75 I 50 30 Diode as specified 0 1 Module Chip 25 15 10 Frequency (KHz) 0 100 Fig.7 Typical Load Current vs. Frequency 0 100 200 300 400 VCES (V) 500 600 Fig.8 Reverse Bias Safe Operation Area (RBSOA) 1.2 0.5 ZthJC:IGBT 1.0 0.4 ZthJC:Diode ZthJC (K/W) ZthJC (K/W) 0.8 0.3 0.6 0.2 0.4 0.1 0.2 0.0 0.001 0.01 t (s) 0.1 1 2 0.0 0.001 0.01 t (s) 0.1 1 2 Fig.9 Typical Transient Thermal Impedance (IGBT) Fig.10 Typical Transient Thermal Impedance (Diode) 20 Rtyp 18 16 R (Kohm) 14 12 10 8 6 4 2 0 0 10 Fig.11 5 20 30 40 50 60 70 TC (°C) 80 90 100 110 120 NTC Temperature Characteristics www.irf.com © 2014 International Rectifier Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG5K75HH06E Internal Circuit: Package Outline (Unit: mm): Qualification Information† Qualification Level Industrial Moisture Sensitivity Level Yes RoHS Compliant † Not Applicable Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ IR WORLD HEADQUARTERS: 101 North Sepulveda Blvd, El Segundo, California, 90245, USA To contact International Rectifier, please visit: http://www.irf.com/whoto-call/ 6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback September 2, 2014