IRG7PH50K10DPbF
IRG7PH50K10D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
VCES = 1200V
C
C
C
IC = 50A, TC =100°C
tSC 10µs, TJ(max) = 150°C
G
VCE(ON) typ. = 1.9V @ IC = 35A
G
E
n-channel
Applications
• Industrial Motor Drive
• UPS
• Solar Inverters
• Welding
CE
IRG7PH50K10DPbF
G
Gate
C
Collector
Features
G
CE
I RG7PH50K10D‐EPbF
E
Emitter
Benefits
Low VCE(ON) and switching losses
10µs Short Circuit SOA
Square RBSOA
Maximum Junction Temperature 150°C
Positive VCE (ON) Temperature Coefficient
Base part number
Package Type
IRG7PH50K10DPbF
IRG7PH50K10D-EPbF
TO-247AC
TO-247AD
High efficiency in a Wide Range of Applications
Rugged Transient Performance
Increased Reliability
Excellent Current Sharing in Parallel Operation
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRG7PH50K10DPbF
IRG7PH50K10D-EPbF
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE=20V
Clamped Inductive Load Current, VGE=20V
Diode Continous Forward Current
Diode Continous Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
Units
1200
90
50
160
160
20
10
±30
400
160
-40 to +150
V
A
V
W
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
C
Thermal Resistance
RJC (IGBT)
RJC (Diode)
RCS
RJA
1
Parameter
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
www.irf.com © 2014 International Rectifier
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
Submit Datasheet Feedback
Max.
0.3
1.4
–––
40
Units
°C/W
March 12, 2014
IRG7PH50K10DPbF/IRG7PH50K10D-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)CES/TJ
Parameter
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
VGE(th)
VGE(th)/TJ
gfe
Gate Threshold Voltage
Threshold Voltage Temperature Coeff.
Forward Transconductance
ICES
Collector-to-Emitter Leakage Current
IGES
VF
Gate-to-Emitter Leakage Current
Diode Forward Voltage Drop
Min.
1200
—
Typ.
—
1.4
Max.
—
—
—
—
5.0
—
—
—
—
—
—
—
1.9
2.4
—
-16
20
1.0
1200
—
2.5
2.4
2.4
V
IC = 35A, VGE = 15V, TJ = 25°C
—
IC = 35A, VGE = 15V, TJ = 150°C
7.5
V
VCE = VGE, IC = 1.7mA
—
mV/°C VCE = VGE, IC = 1.7mA (25°C-150°C)
—
S
VCE = 50V, IC = 35A, PW = 20µs
35
µA VGE = 0V, VCE = 1200V
—
VGE = 0V, VCE = 1200V, TJ = 150°C
±100
nA VGE = ±30V
3.3
V
IF = 8A
—
V
IF = 8A, TJ = 150°C
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Total Gate Charge (turn-on)
—
200
Qg
Gate-to-Emitter Charge (turn-on)
—
40
Qge
Qgc
Gate-to-Collector Charge (turn-on)
—
90
Eon
Turn-On Switching Loss
—
2.6
Eoff
Turn-Off Switching Loss
1.6
Etotal
Total Switching Loss
4.2
td(on)
Turn-On delay time
—
90
tr
Rise time
—
60
Turn-Off delay time
—
340
td(off)
Fall time
—
90
tf
Turn-On Switching Loss
—
3.5
Eon
Max Units
Conditions
300
IC = 35A
60
nC VGE = 15V
VCC = 600V
135
3.5
2.5
mJ IC = 35A, VCC = 600V, VGE=15V
6.0
RG = 5, TJ = 25°C
105
Energy losses include tail & diode
80
ns reverse recovery
390
110
—
Eoff
Etotal
td(on)
tr
td(off)
tf
Cies
Coes
Cres
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RBSOA
Reverse Bias Safe Operating Area
SCSOA
Short Circuit Safe Operating Area
10
—
—
Erec
trr
Irr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
—
—
—
190
130
13
—
—
—
—
2.8
6.3
70
60
350
250
4300
190
100
—
—
—
—
—
—
—
Units
Conditions
V
VGE = 0V, IC = 250µA
V/°C VGE = 0V, IC = 2mA (25°C-150°C)
—
—
—
—
—
—
—
—
FULL SQUARE
mJ
ns
IC = 35A, VCC = 600V, VGE=15V
RG = 5, TJ = 150°C
Energy losses include tail & diode
reverse recovery
VGE = 0V
VCC = 30V
f = 1.0Mhz
TJ = 150°C, IC = 160A
VCC = 960V, Vp ≤ 1200V
VGE = +20V to 0V
TJ = 150°C,VCC = 600V, Vp ≤ 1200V
µs V = +15V to 0V
GE
pF
µJ
ns
A
TJ = 150°C
VCC = 600V, IF = 8A
VGE = 15V, Rg = 5
Notes:
VCC = 80% (VCES), VGE = 20V
R is measured at TJ of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Maximum limits are based on statistical sample size characterization.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement.
2
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
March 12, 2014
IRG7PH50K10DPbF/IRG7PH50K10D-EPbF
90
For both:
Duty cycle : 50%
Tj = 150°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 161W
80
Load Current ( A )
70
60
50
40
Square Wave:
VCC
30
I
20
Diode as specified
10
0
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
450
400
80
350
300
Ptot (W)
IC (A)
60
40
250
200
150
20
100
50
0
25
50
75
100
125
0
150
25
50
75
TC (°C)
100
125
150
TC (°C)
Fig. 3 - Power Dissipation vs.
Case Temperature
Fig. 2 - Maximum DC Collector Current vs.
Case Temperature
1000
1000
100
100
10
100µsec
10
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
DC
1
0.1
1
10
100
1000
10000
VCE (V)
Fig. 4 - Forward SOA
TC = 25°C, TJ 150°C, VGE =15V
3
IC (A)
IC (A)
10µsec
www.irf.com © 2014 International Rectifier
10
100
1000
10000
VCE (V)
Fig. 5- Reverse Bias SOA
TJ = 150°C; VGE = 20V
Submit Datasheet Feedback
March 12, 2014
IRG7PH50K10DPbF/IRG7PH50K10D-EPbF
160
160
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9.0V
VGE = 8.0V
140
120
120
100
ICE (A)
ICE (A)
100
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9.0V
VGE = 8.0V
140
80
80
60
60
40
40
20
20
0
0
0
1
2
3
4
5
6
7
8
9
0
10
2
4
160
160
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9.0V
VGE = 8.0V
140
120
140
120
TJ =150°C
TJ = 25°C
100
IF (A)
100
ICE (A)
10
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 20µs
Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 20µs
80
TJ = -40°C
80
60
60
40
40
20
20
0
0
0
1
2
3
4
5
6
7
8
9
0.0
10
2.0
4.0
6.0
8.0
10.0
V F (V)
V CE (V)
Fig. 9 - Typ. Diode Forward Characteristics
tp = 20µs
Fig. 8 - Typ. IGBT Output Characteristics
TJ = 150°C; tp = 20µs
8
8
ICE = 18A
ICE = 35A
ICE = 70A
ICE = 18A
ICE = 35A
ICE = 70A
6
VCE (V)
6
VCE (V)
8
V CE (V)
V CE (V)
4
2
4
2
0
0
6
8
10
12
14
16
18
20
V GE (V)
Fig. 10 - Typical VCE vs. VGE
TJ = -40°C
4
6
www.irf.com © 2014 International Rectifier
6
8
10
12
14
16
18
20
V GE (V)
Fig. 11 - Typical VCE vs. VGE
TJ = 25°C
Submit Datasheet Feedback
March 12, 2014
IRG7PH50K10DPbF/IRG7PH50K10D-EPbF
8
160
VCE (V)
6
140
IC, Collector-to-Emitter Current (A)
ICE = 18A
ICE = 35A
ICE = 70A
4
2
TJ = 25°C
TJ = 150°C
120
100
80
60
40
20
0
0
6
8
10
12
14
16
18
4
20
V GE (V)
10
6
8
Fig. 12 - Typical VCE vs. VGE
TJ = 150°C
12
14
Fig. 13 - Typ. Transfer Characteristics
VCE = 50V; tp = 20µs
1000
tdOFF
Swiching Time (ns)
8
Energy (mJ)
10
V GE, Gate-to-Emitter Voltage (V)
6
EON
4
EOFF
tF
100
tdON
tR
2
0
0
10
20
30
40
50
60
70
10
80
0
10
20
30
IC (A)
40
50
60
70
IC (A)
Fig. 14 - Typ. Energy Loss vs. IC
TJ = 150°C; VCE = 600V, RG = 5; VGE = 15V
Fig. 15 - Typ. Switching Time vs. IC
TJ = 150°C; VCE = 600V, RG = 5; VGE = 15V
10
10000
8
6
EOFF
4
tdOFF
1000
Swiching Time (ns)
Energy (mJ)
EON
2
tdON
tR
tF
100
10
0
0
20
40
60
80
100
120
1
0
20
RG ()
Fig. 16 - Typ. Energy Loss vs. RG
TJ = 150°C; VCE = 600V, ICE = 35A; VGE = 15V
5
www.irf.com © 2014 International Rectifier
40
60
80
100
RG ()
Fig. 17 - Typ. Switching Time vs. RG
TJ = 150°C; VCE = 600V, ICE = 35A; VGE = 15V
Submit Datasheet Feedback
March 12, 2014
IRG7PH50K10DPbF/IRG7PH50K10D-EPbF
18
14
RG =
12
14
10
IRR (A)
IRR (A)
RG = 10
10
8
RG = 47
6
RG = 100
4
6
2
2
4
6
8
10
12
14
16
0
20
40
IF (A)
60
80
100
120
RG ()
Fig. 18 - Typ. Diode IRR vs. IF
TJ = 150°C
Fig. 19 - Typ. Diode IRR vs. RG
15
1800
1600
1400
11
QRR (nC)
IRR (A)
13
9
16A
1200
1000
8A
800
600
7
4A
400
200
5
0
100
200
300
400
0
500
100
200
300
400
500
diF /dt (A/µs)
diF /dt (A/µs)
Fig. 21 - Typ. Diode QRR vs. diF/dt
VCC = 600V; VGE = 15V; TJ = 150°C
Fig. 20 - Typ. Diode IRR vs. diF/dt
VCC = 600V; VGE = 15V; IF = 8A; TJ = 150°C
35
280
30
240
350
RG =
300
Time (µs)
Energy (µJ)
RG = 47
100
RG = 100
Isc
Tsc
20
160
15
120
10
80
Current (A)
200
150
200
25
RG =10
250
50
40
5
10
0
2
4
6
8
10
12
14
16
18
11
12
13
14
15
16
VGE (V)
IF (A)
Fig. 22 - Typ. Diode ERR vs. IF
TJ = 150°C
6
www.irf.com © 2014 International Rectifier
Fig. 23 - VCE vs. Short Circuit Time
Vcc= 600V; TC= 150°C
Submit Datasheet Feedback
March 12, 2014
IRG7PH50K10DPbF/IRG7PH50K10D-EPbF
16
VGE, Gate-to-Emitter Voltage (V)
10000
1000
100
Coes
Cres
VCES = 600V
14
VCES = 400V
12
10
8
6
4
2
0
10
0
100
200
300
400
500
0
600
40
80
120
160
200
240
Q G, Total Gate Charge (nC)
VCE (V)
Fig. 25 - Typical Gate Charge vs. VGE
ICE = 35A
Fig. 24 - Typ. Capacitance vs. VCE
Thermal Response ( ZthJC )
1
0.1
D = 0.50
0.20
0.10
0.05
0.01
0.02
J
0.01
0.001
0.0001
1E-006
J
1
R2
R2
R3
R3
R4
R4
C
2
1
3
2
4
3
C
4
Ci= iRi
Ci= iRi
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
R1
R1
Ri(°C/W)
i (sec)
0.0149
0.00005
0.0670
0.00017
0.1384
0.00422
0.0908
0.02614
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 26 Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
1
Thermal Response ( ZthJC )
Capacitance (pF)
Cies
0.1
D = 0.50
0.20
0.10
0.05
0.02
0.01
J
0.01
0.001
0.0001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
R1
R1
J
1
R2
R2
R3
R3
R4
R4
C
2
1
2
3
4
3
Ci= iRi
Ci= iRi
4
C
Ri(°C/W)
i (sec)
0.0108
0.00001
0.5322
0.00041
0.5460
0.00340
0.3107
0.02493
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 27 Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
7
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
March 12, 2014
IRG7PH50K10DPbF/IRG7PH50K10D-EPbF
L
L
VCC
DUT
0
80 V +
-
DUT
1K
VCC
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp /
DUT
L
4X
DC
VCC
-5V
DUT /
DRIVER
DUT
VCC
Rg
RSH
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
C force
R=
VCC
ICM
100K
D1
22K
C sense
DUT
VCC
G force
DUT
0.0075µF
Rg
E sense
E force
Fig.C.T.5 - Resistive Load Circuit
8
www.irf.com © 2014 International Rectifier
Fig.C.T.6 - BVCES Filter Circuit
Submit Datasheet Feedback
March 12, 2014
IRG7PH50K10DPbF/IRG7PH50K10D-EPbF
700
70
700
600
60
600
50
500
400
40
400
300
30
200
20
200
10
100
100
90% ICE
10% VCE
10% ICE
0
Eoff Loss
-0.4 -0.2
0
0.2
0.4
-10
0.6
60
TEST
CURRENT
50
40
300
30
90% ICE
20
10% ICE
10
10% VCE
0
Eon Loss
-100
-0.4 -0.2
0.8
0
0.2
0.4
-10
0.6
0.8
time (µs)
time(µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 150°C using Fig. CT.4
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4
45
700
QRR
350
VCE
600
30
300
500
tRR
15
250
Vce (V)
IF (A)
400
0
-15
70
tr
0
0
-100
80
Peak
IRR
200
ICE
300
150
200
100
100
50
0
-30
-0.20
0.00
0.20
0.40
0.60
time (µS)
Fig. WF3 - Typ. Diode Recovery Waveform
@ TJ = 150°C using Fig. CT.4
9
www.irf.com © 2014 International Rectifier
0.80
Ice (A)
VCE (V)
500
VCE (V)
800
tf
ICE (A)
80
800
ICE (A)
0
-100
-50
-10
-5
0
5
10
15
20
Time (uS)
Fig. WF4 - Typ. S.C. Waveform
@ TJ = 150°C using Fig. CT.3
Submit Datasheet Feedback
March 12, 2014
IRG7PH50K10DPbF/IRG7PH50K10D-EPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
Notes: This part marking information applies to devices produced after 02/26/2001
EXAMPLE: THIS IS AN IRFPE30
WITH ASSEMBLY
LOT CODE 5657
ASSEMBLED ON WW 35, 2001
IN THE ASSEMBLY LINE "H"
Note: "P" in assembly line position
indicates "Lead-Free"
INTERNATIONAL
RECTIFIER
LOGO
PART NUMBER
IRFPE30
56
135H
57
ASSEMBLY
LOT CODE
DATE CODE
YEAR 1 = 2001
WEEK 35
LINE H
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
March 12, 2014
IRG7PH50K10DPbF/IRG7PH50K10D-EPbF
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
EXAM PLE:
T H IS IS A N IR G P 3 0 B 1 2 0 K D - E
W IT H A S S E M B L Y
LO T C O D E 5657
ASSEM BLED O N W W 35, 2000
IN T H E A S S E M B L Y L IN E "H "
N o te : "P " in a s s e m b ly lin e p o s itio n
in d ic a t e s "L e a d - F re e "
PART N U M BER
IN T E R N A T IO N A L
R E C T IF IE R
LO G O
56
035H
57
ASSEM B LY
LO T C O D E
D A TE C O D E
YE A R 0 = 20 0 0
W EEK 35
L IN E H
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
March 12, 2014
IRG7PH50K10DPbF/IRG7PH50K10D-EPbF
Qualification Information†
Industrial
(per JEDEC JESD47F) ††
Qualification Level
TO-247AC
Moisture Sensitivity Level
N/A
TO-247AD
Yes
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
††
Applicable version of JEDEC standard at the time of product release.
Revision History
Date
3/12/14
Comments
Updated Package outline on page10
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
o contact International Rectifier, please visit http://www.irf.com/whoto-call/
12
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
March 12, 2014
工商网监
湘ICP备2023018690号
