IRGIB10B60KD1P

IRGIB10B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10μs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature Rated at 175°C • Lead-Free • UL Certified IC = 10A, TC=100°C G tsc > 10μs, TJ=150°C E VCE(on) typ. = 1.7V n-channel Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing in Parallel Operation. TO-220 Full-Pak Base part number Package Type IRGIB10B60KD1P TO-220AB Full- Pak Standard Pack Form Quantity Tube 50 Orderable Part Number IRGIB10B60KD1P Absolute Maximum Ratings Parameter Max. Units V VCES Collector-to-Emitter Voltage 600 IC @ TC = 25°C Continuous Collector Current 16 IC @ TC = 100°C Continuous Collector Current 10 ICM 32 ILM Pulse Collector Current (Ref.Fig.C.T.5) Clamped Inductive Load current IF @ TC = 25°C Diode Continuous Forward Current 16 IF @ TC = 100°C Diode Continuous Forward Current 10 IFM Diode Maximum Forward Current 32 VISOL RMS Isolation Voltage, Terminal to Case, t = 1 min 2500 VGE Gate-to-Emitter Voltage ±20 PD @ TC = 25°C Maximum Power Dissipation 44 c 32 PD @ TC = 100°C Maximum Power Dissipation Operating Junction and TJ TSTG A V W 22 -55 to +175 Storage Temperature Range °C Soldering Temperature for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbf.in (1.1N.m) Thermal / Mechanical Characteristics Parameter Min. Typ. Max. RθJC Junction-to-Case- IGBT ––– ––– 3.4 RθJC Junction-to-Case- Diode ––– ––– 5.3 RθCS Case-to-Sink, flat, greased surface ––– 0.50 ––– RθJA Junction-to-Ambient, typical socket mount ––– ––– 62 Wt Weight ––– 2.0 ––– 1 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback Units °C/W g August 4, 2015 IRGIB10B60KD1P Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage — 1.50 VCE(on) Collector-to-Emitter Voltage — — VGE(th) Gate Threshold Voltage 3.5 ΔVGE(th)/ΔTJ Threshold Voltage temp. coefficient — gfe Forward Transconductance — — ICES Zero Gate Voltage Collector Current — — VFM Diode Forward Voltage Drop — — — IGES Gate-to-Emitter Leakage Current — — 0.99 1.70 2.05 2.06 4.5 -10 5.0 1.0 90 150 1.80 1.32 1.23 — Conditions — V VGE = 0V, IC = 500μA — V/°C VGE = 0V, IC = 1mA (25°C-150°C) IC = 10A, VGE = 15V, TJ = 25°C 2.10 2.35 V IC = 10A, VGE = 15V, TJ = 150°C IC = 10A, VGE = 15V, TJ = 175°C 2.35 5.5 V VCE = VGE, IC = 250μA — mV/°C VCE = VGE, IC = 1mA (25°C-150°C) — S VCE = 50V, IC = 10A, PW = 80μs VGE = 0V, VCE = 600V 150 250 μA VGE = 0V, VCE = 600V, TJ = 150°C VGE = 0V, VCE = 600V, TJ = 175°C 400 2.40 V IF = 5.0A, VGE = 0V IF = 5.0A, VGE = 0V, TJ = 150°C 1.74 IF = 5.0A, VGE = 0V, TJ = 175°C 1.62 ±100 nA VGE = ±20V, VCE = 0V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Qg Qge Qgc Eon Eoff Etot td(on) tr td(off) tf Eon Eoff Etot td(on) tr td(off) tf LE Cies Coes Cres RBSOA Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area — 41 62 — 4.6 6.9 — 19 29 — 156 264 — 165 273 — 321 434 — 25 33 — 24 34 — 180 250 — 62 87 — 261 372 — 313 425 — 574 694 — 22 31 — 24 34 — 240 340 — 48 67 — 7.5 — — 610 915 — 66 99 — 23 35 FULL SQUARE SCSOA Short Circuit Safe Operating Area 10 — — μs ISC (PEAK) Erec trr Irr Qrr Peak Short Circuit Collector Current Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current Diode Reverse Recovery Charge — — — — — 100 99 79 14 553 — 128 103 18 719 A μJ ns A nC  Vcc =80% (V CES), VGE = 20V, L =100μH, RG = 50Ω. 2 www.irf.com © 2015 International Rectifier nC μJ ns μJ ns nH pF Conditions IC = 10A VCC = 400V VGE = 15V IC = 10A, VCC = 400V VGE = 15V, RG = 50Ω, L = 1.07mH Ls= 150nH, TJ = 25°C IC = 10A, VCC = 400V VGE = 15V, RG = 50Ω, L = 1.1mH Ls= 150nH, TJ = 25°C d IC = 10A, VCC = 400V VGE = 15V, RG = 50Ω, L = 1.07mH Ls= 150nH, TJ = 150°C IC = 8.0A, VCC = 400V VGE = 15V, RG = 50Ω, L = 1.07mH Ls= 150nH, TJ = 150°C d Measured 5 mm from package VGE = 0V VCC = 30V f = 1.0MHz TJ = 150°C, IC = 32A, Vp = 600V VCC=500V,VGE = +15V to 0V,RG = 50Ω TJ = 150°C, Vp = 600V, RG = 50Ω VCC=360V,VGE = +15V to 0V TJ = 150°C VCC = 400V, IF = 10A, L = 1.07mH VGE = 15V, RG = 50Ω di/dt = 500A/μs ‚ Energy losses include "tail" and diode reverse recovery. Submit Datasheet Feedback August 4, 2015 IRGIB10B60KD1P 20 50 45 16 40 35 Ptot (W) IC (A) 12 8 30 25 20 15 4 10 5 0 0 0 20 40 60 80 100 120 140 160 180 0 20 40 60 T C (°C) 80 100 120 140 160 180 T C (°C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature 100 100 10 10 μs IC A) IC (A) 100 μs 1 10 1ms 0.1 DC 0.01 1 10 100 1000 10000 VCE (V) Fig. 3 - Forward SOA TC = 25°C; TJ ≤ 175°C 3 www.irf.com © 2015 International Rectifier 1 10 100 1000 VCE (V) Fig. 4 - Reverse Bias SOA TJ = 150°C; VGE =15V Submit Datasheet Feedback August 4, 2015 IRGIB10B60KD1P 20 18 16 14 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 18 16 14 12 ICE (A) ICE (A) 20 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 10 8 12 10 8 6 6 4 4 2 2 0 0 0 2 4 6 0 2 VCE (V) Fig. 6 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80μs 20 40 18 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 16 14 12 -40°C 25°C 150°C 35 30 25 IF (A) ICE (A) 6 VCE (V) Fig. 5 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80μs 10 8 20 15 6 10 4 5 2 0 0 0 2 4 6 0.0 0.5 1.0 VCE (V) Fig. 7 - Typ. IGBT Output Characteristics TJ = 150°C; tp = 80μs 4 4 www.irf.com © 2015 International Rectifier 1.5 2.0 2.5 VF (V) Fig. 8 - Typ. Diode Forward Characteristics tp = 80μs Submit Datasheet Feedback August 4, 2015 3.0 20 20 18 18 16 16 14 14 12 ICE = 5.0A 10 ICE = 10A 8 ICE = 20A VCE (V) VCE (V) IRGIB10B60KD1P 12 10 ICE = 5.0A ICE = 10A 8 ICE = 20A 6 6 4 4 2 2 0 0 5 10 15 20 5 10 VGE (V) Fig. 10 - Typical VCE vs. VGE TJ = 25°C 100 18 90 TJ = 25°C 16 80 TJ = 150°C 14 70 12 ICE = 5.0A 10 ICE = 10A 8 ICE = 20A ICE (A) 20 60 50 40 6 30 4 20 2 10 0 5 10 15 20 T J = 150°C T J = 25°C 0 0 5 VGE (V) Fig. 11 - Typical VCE vs. VGE TJ = 150°C 5 20 VGE (V) Fig. 9 - Typical VCE vs. VGE TJ = -40°C VCE (V) 15 www.irf.com © 2015 International Rectifier 10 15 VGE (V) Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 10μs Submit Datasheet Feedback August 4, 2015 20 IRGIB10B60KD1P 700 1000 600 tdOFF Energy (μJ) 400 Swiching Time (ns) EOFF 500 EON 300 200 100 tF tdON tR 10 100 0 0 5 10 15 1 20 0 IC (A) 15 20 Fig. 14 - Typ. Switching Time vs. IC TJ = 150°C; L=1.07mH; VCE= 400V RG= 50Ω; VGE= 15V 10000 1000 EOFF 800 Swiching Time (ns) EON 600 400 1000 tdOFF 100 tF tR tdON 200 10 0 0 100 200 300 400 500 0 100 Fig. 15 - Typ. Energy Loss vs. RG TJ = 150°C; L=1.07mH; VCE= 400V ICE= 10A; VGE= 15V www.irf.com © 2015 International Rectifier 200 300 400 RG (Ω) RG (Ω) 6 10 IC (A) Fig. 13 - Typ. Energy Loss vs. IC TJ = 150°C; L=1.07mH; VCE= 400V RG= 50Ω; VGE= 15V Energy (μJ) 5 Fig. 16 - Typ. Switching Time vs. RG TJ = 150°C; L=1.07mH; VCE= 400V ICE= 10A; VGE= 15V Submit Datasheet Feedback August 4, 2015 500 IRGIB10B60KD1P 15 16 RG = 50 Ω 14 12 RG = 150 Ω 10 IRR (A) IRR (A) 10 RG = 270 Ω 8 6 5 RG = 470 Ω 4 2 0 0 0 5 10 15 20 0 100 200 IF (A) 400 500 Fig. 18 - Typical Diode IRR vs. RG TJ = 150°C; IF = 10A Fig. 17 - Typical Diode IRR vs. IF TJ = 150°C 1000 16 50Ω 150Ω 14 800 Q RR (nC) 10 8 20A 270 Ω 12 IRR (A) 300 RG (Ω) 10A 470Ω 600 400 5.0A 6 4 200 2 0 0 0 200 400 600 0 100 200 7 www.irf.com © 2015 International Rectifier 400 500 diF /dt (A/μs) diF /dt (A/μs) Fig. 19- Typical Diode IRR vs. diF/dt VCC= 400V; VGE= 15V; ICE= 10A; TJ = 150°C 300 Fig. 20 - Typical Diode QRR VCC= 400V; VGE= 15V;TJ = 150°C Submit Datasheet Feedback August 4, 2015 600 IRGIB10B60KD1P 200 Energy (μJ) 160 120 470 Ω 270 Ω 80 150 Ω 50 Ω 40 0 5 10 15 20 25 IF (A) Fig. 21 - Typical Diode ERR vs. IF TJ = 150°C 16 1000 14 Cies 300V 400V 10 VGE (V) Capacitance (pF) 12 100 Coes 8 6 4 2 Cres 0 10 1 10 VCE (V) Fig. 22- Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz 8 www.irf.com © 2015 International Rectifier 100 0 10 20 30 40 Q G , Total Gate Charge (nC) Fig. 23 - Typical Gate Charge vs. VGE ICE = 10A; L = 2500μH Submit Datasheet Feedback August 4, 2015 50 IRGIB10B60KD1P Thermal Response ( Z thJC ) 10 D = 0.50 1 0.20 0.10 R1 R1 0.05 0.1 τJ 0.02 0.01 τJ τ1 R2 R2 R3 R3 Ri (°C/W) R4 R4 τC τ τ2 τ1 τ3 τ2 τ3 τ4 τ4 Ci= τi/Ri Ci i/Ri 0.01 τi (sec) 0.3628 0.00018 0.2582 0.000695 1.1008 0.075305 1.6973 1.781 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) Thermal Response ( Z thJC ) 10 D = 0.50 0.20 1 0.10 τJ 0.05 0.02 0.1 R1 R1 τJ τ1 R2 R2 R3 R3 τC τ τ1 τ2 τ3 τ2 τ3 τ4 τ4 Ci= τi/Ri Ci i/Ri 0.01 Ri (°C/W) R4 R4 τi (sec) 0.9004 0.000103 1.3642 0.000693 1.4540 0.033978 1.5805 1.6699 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) 9 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback August 4, 2015 100 IRGIB10B60KD1P L L VCC DUT 0 + - 80 V DUT Fig.C.T.2 - RBSOA Circuit Fig.C.T.1 - Gate Charge Circuit (turn-off) diode clamp / DUT Driver L - 5V 360V DC 480V Rg 1K DUT / DRIVER DUT VCC Rg Fig.C.T.3 - S.C.SOA Circuit Fig.C.T.4 - Switching Loss Circuit R= DUT VCC ICM VCC Rg Fig.C.T.5 - Resistive Load Circuit 10 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback August 4, 2015 IRGIB10B60KD1P 600 15 600 30 tf 12.5 Vce 400 500 Ice 10 400 90% Ice 5 5% Ice 100 Vce (V) 200 0 Eoff Loss 1 5 5% Vce 0 Eon Loss -100 0.05 -5 0.8 10 0 -2.5 -200 0.6 15 200 100 0 0.4 10% Ice 300 2.5 Ice -100 20 90% Ice 7.5 5% Vce Ice Ice(A) (A) Vce (V) 300 25 Vce tr Ice (A) 500 1.2 -5 0.15 0.25 Time (uS) 0.35 Time (uS) Fig. WF1- Typ. Turn-off Loss Waveform @ TJ = 150°C using Fig. CT.4 100 Fig. WF2- Typ. Turn-on Loss Waveform @ TJ = 150°C using Fig. CT.4 15 400 200 300 150 200 100 100 50 QRR 10 -200 0 -300 Peak IRR 10% Peak IRR -5 -400 -10 -500 -15 -600 0.20 0.30 0.40 0.50 -20 0.60 Vce (V) 5 If (A) Vf (V) tRR -100 0 0.00 10.00 20.00 30.00 40.00 0 50.00 Time (uS) Time (uS) Fig. WF3- Typ. Diode Recovery Waveform @ TJ = 150°C using Fig. CT.4 11 www.irf.com © 2015 International Rectifier Fig. WF4- Typ. S.C Waveform @ TC = 150°C using Fig. CT.3 Submit Datasheet Feedback August 4, 2015 Ice (A) 0 IRGIB10B60KD1P TO-220 Full-Pak Package Outline Dimensions are shown in millimeters (inches) TO-220 Full-Pak Part Marking Information EXAMPLE: T HIS IS AN IRFI840G WITH ASSEMBLY LOT CODE 3432 ASS EMBLED ON WW 24 1999 IN THE ASSEMBLY LINE "K" Note: "P" in assembly line position indicates "Lead-Free" INT ERNATIONAL RECTIF IER LOGO ASSEMBLY LOT CODE PART NUMBER IRFI840G 924K 34 32 DATE CODE YEAR 9 = 1999 WEEK 24 LINE K TO-220 Full-Pak package is not recommended for Surface Mount Application Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 12 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback August 4, 2015 IRGIB10B60KD1P † Qualification Information Industrial Qualification Level Moisture Sensitivity Level (per JEDEC JESD47F) TO-220AB-Full-Pak RoHS Compliant † †† †† N/A Yes Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Applicable version of JEDEC standard at the time of product release. Revision History Date 8/4/2015 Comments • Updated data sheet with the new corporate template. • Added feature "UL Certified" on page 1. • Updated package outline on page 12. • Updated note cfrom "V GE =15V" to "VGE = 20V" on page 2. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 13 www.irf.com © 2015 International Rectifier Submit Datasheet Feedback August 4, 2015