IRGIB15B60KD1P

PD- 94914 IRGIB15B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature Rated at 175°C • Lead-Free C VCES = 600V IC = 12A, TC=100°C G E tsc > 10µs, TJ=150°C n-channel VCE(on) typ. = 1.80V Benefits • Low EMI. • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Excellent Current Sharing in Parallel Operation. Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VISOL VGE PD @ TC = 25°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current (Ref.Fig.C.T.5) Clamped Inductive Load current TO-220 Full-Pak Max. 600 19 12 A 38 38 19 12 38 2500 ±20 52 26 -55 to +175 °C 300 (0.063 in. (1.6mm) from case) 10 lbf.in (1.1N.m) W V Units V c Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current RMS Isolation Voltage, Terminal to Case, t = 1 min Gate-to-Emitter Voltage Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature for 10 sec. Mounting Torque, 6-32 or M3 Screw PD @ TC = 100°C Maximum Power Dissipation Thermal / Mechanical Characteristics Parameter RθJC RθJC RθCS RθJA Wt Junction-to-Case- IGBT Junction-to-Case- Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. ––– ––– ––– ––– ––– Typ. ––– ––– 0.50 ––– 2.0 Max. 2.9 4.6 ––– 62 ––– Units °C/W g www.irf.com 1 12/30/03 IRGIB15B60KD1P Parameter Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Min. Typ. Max. Units — 0.32 1.80 2.05 2.10 4.5 -10 10 1.0 163 829 1.69 1.31 1.25 — Conditions Ref.Fig. V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — — VCE(on) Collector-to-Emitter Voltage — — VGE(th) Gate Threshold Voltage 3.5 ∆VGE(th)/∆TJ Threshold Voltage temp. coefficient — gfe Forward Transconductance — — ICES Zero Gate Voltage Collector Current — — VFM Diode Forward Voltage Drop — — — IGES Gate-to-Emitter Leakage Current — — V VGE = 0V, IC = 500µA — V/°C VGE = 0V, IC = 1mA (25°C-150°C) IC = 15A, VGE = 15V, TJ = 25°C 2.20 2.50 V IC = 15A, VGE = 15V, TJ = 150°C IC = 15A, VGE = 15V, TJ = 175°C 2.60 5.5 V VCE = VGE, IC = 250µA — mV/°C VCE = VGE, IC = 1mA (25°C-150°C) — S VCE = 50V, IC = 15A, PW = 80µs VGE = 0V, VCE = 600V 150 500 µA VGE = 0V, VCE = 600V, TJ = 150°C VGE = 0V, VCE = 600V, TJ = 175°C 1800 2.30 V IF = 15A, VGE = 0V IF = 15A, VGE = 0V, TJ = 150°C 1.75 IF = 15A, VGE = 0V, TJ = 175°C 1.65 ±100 nA VGE = ±20V, VCE = 0V 5,6,7 9,10,11 9,10,11 12 8 Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Qg Qge Qgc Eon Eoff Etot td(on) tr td(off) tf Eon Eoff Etot td(on) tr td(off) tf LE Cies Coes Cres RBSOA SCSOA ISC (PEAK) Erec trr Irr Qrr Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area Short Circuit Safe Operating Area Peak Short Circuit Collector Current Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current Diode Reverse Recovery Charge Min. Typ. Max. Units — 56 84 — 7.0 10 — 26 39 — 127 140 — 334 422 — 461 556 — 30 39 — 25 35 — 173 188 — 41 53 — 258 282 — 570 646 — 829 915 — 30 39 — 25 35 — 194 207 — 56 73 — 7.5 — — 850 1275 — 100 150 — 32 48 FULL SQUARE 10 — — — — — — 140 267 67 23 984 — — 347 87 30 1279 nC Conditions IC = 15A VCC = 400V VGE = 15V IC = 15A, VCC = 400V VGE = 15V, RG = 22Ω, L = 1.07mH Ls= 150nH, TJ = 25°C IC = 15A, VCC = 400V VGE = 15V, RG = 22Ω, L = 1.07mH Ls= 150nH, TJ = 25°C Ref.Fig. 23 CT1 CT4 µJ d ns CT4 µJ ns IC = 15A, VCC = 400V VGE = 15V, RG = 22Ω, L = 1.07mH Ls= 150nH, TJ = 150°C IC = 15A, VCC = 400V VGE = 15V, RG = 22Ω, L = 1.07mH Ls= 150nH, TJ = 150°C CT4 13,15 WF1,WF2 14,16 CT4 WF1 WF2 d nH pF Measured 5 mm from package VGE = 0V VCC = 30V f = 1.0MHz TJ = 150°C, IC = 38A, Vp = 600V VCC=500V,VGE = +15V to 0V,RG = 22Ω TJ = 150°C, Vp = 600V, RG = 22Ω VCC=360V,VGE = +15V to 0V TJ = 150°C VCC = 400V, IF = 15A, L = 1.07mH VGE = 15V, RG = 22Ω di/dt = 875A/µs 22 4 CT2 CT3 WF4 WF4 17,18,19 20,21 CT4,WF3 µs A µJ ns A nC  Vcc =80% (VCES), VGE = 15V, L =100µH, RG = 22Ω. ‚ Energy losses include "tail" and diode reverse recovery. 2 www.irf.com IRGIB15B60KD1P 20 55 50 16 45 40 Ptot (W) 12 IC (A) 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 140 160 180 T C (°C) 0 20 40 60 80 100 120 140 160 180 T C (°C) 8 4 0 Fig. 1 - Maximum DC Collector Current vs. Case Temperature Fig. 2 - Power Dissipation vs. Case Temperature 100 100 10 µs 10 IC (A) IC A) 10000 100 µs 1 1ms 10 0.1 1 10 100 VCE (V) DC 1000 1 10 100 1000 VCE (V) Fig. 3 - Forward SOA TC = 25°C; TJ ≤ 150°C Fig. 4 - Reverse Bias SOA TJ = 150°C; VGE =15V www.irf.com 3 IRGIB15B60KD1P 20 18 16 14 ICE (A) 20 18 16 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 14 ICE (A) 12 10 8 6 4 2 0 0 2 12 10 8 6 4 2 0 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 4 VCE (V) 6 0 2 VCE (V) 4 6 Fig. 5 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 60µs Fig. 6 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 60µs 20 18 16 14 ICE (A) 70 60 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 50 IF (A) -40°C 25°C 150°C 12 10 8 6 4 2 0 0 2 40 30 20 10 0 4 VCE (V) 6 0.0 0.5 1.0 1.5 VF (V) 2.0 2.5 3.0 Fig. 7 - Typ. IGBT Output Characteristics TJ = 150°C; tp = 60µs Fig. 8 - Typ. Diode Forward Characteristics tp = 60µs 4 www.irf.com IRGIB15B60KD1P 20 18 16 14 VCE (V) VCE (V) 20 18 16 14 ICE = 7.5A ICE = 15A ICE = 30A 12 10 8 6 4 2 0 5 10 VGE (V) 15 20 5 10 VGE (V) 15 20 ICE = 7.5A ICE = 15A ICE = 30A 12 10 8 6 4 2 0 Fig. 9 - Typical VCE vs. VGE TJ = -40°C Fig. 10 - Typical VCE vs. VGE TJ = 25°C 20 18 16 14 VCE (V) 70 60 50 ICE (A) T J = 25°C T J = 150°C 12 10 8 6 4 2 0 5 10 ICE = 7.5A ICE = 15A ICE = 30A 40 30 20 10 0 T J = 150°C T J = 25°C 0 5 VGE (V) 10 15 15 VGE (V) 20 Fig. 11 - Typical VCE vs. VGE TJ = 150°C Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 10µs www.irf.com 5 IRGIB15B60KD1P 1400 1200 1000 Energy (µJ) tdOFF Swiching Time (ns) 1000 800 600 400 200 0 0 5 10 15 IC (A) EOFF EON 100 tF tdON 10 tR 20 25 30 1 0 5 10 15 20 25 30 IC (A) Fig. 13 - Typ. Energy Loss vs. IC TJ = 150°C; L=1.07mH; VCE= 400V RG= 22Ω; VGE= 15V Fig. 14 - Typ. Switching Time vs. IC TJ = 150°C; L=1.07mH; VCE= 400V RG= 22Ω; VGE= 15V 1200 10000 1000 EOFF 800 Swiching Time (ns) EON 1000 Energy (µJ) 600 tdOFF 400 100 200 tF tdON tR 0 50 100 150 200 0 0 50 100 150 200 10 RG (Ω) RG (Ω) Fig. 15 - Typ. Energy Loss vs. RG TJ = 150°C; L=1.07mH; VCE= 400V ICE= 15A; VGE= 15V Fig. 16 - Typ. Switching Time vs. RG TJ = 150°C; L=1.07mH; VCE= 400V ICE= 15A; VGE= 15V 6 www.irf.com IRGIB15B60KD1P 25 24 20 RG = 22 Ω RG = 47 Ω 20 16 IRR (A) RG = 100 Ω 10 IRR (A) 25 30 15 12 RG = 200 Ω 5 8 4 0 0 5 10 15 20 0 0 40 80 120 160 200 IF (A) RG (Ω) Fig. 17 - Typical Diode IRR vs. IF TJ = 150°C Fig. 18 - Typical Diode IRR vs. RG TJ = 150°C; IF = 15A 24 1500 30A 20 16 1000 Q RR (nC) 15A 7.5A IRR (A) 12 8 500 200Ω 100 Ω 47Ω 22Ω 4 0 0 200 400 600 800 1000 0 0 200 400 600 800 1000 diF /dt (A/µs) diF /dt (A/µs) Fig. 19- Typical Diode IRR vs. diF/dt VCC= 400V; VGE= 15V; ICE= 15A; TJ = 150°C Fig. 20 - Typical Diode QRR VCC= 400V; VGE= 15V;TJ = 150°C www.irf.com 7 IRGIB15B60KD1P 200 160 Energy (µJ) 120 200 Ω 80 100 Ω 47 Ω 22 Ω 40 0 5 10 15 20 25 IF (A) Fig. 21 - Typical Diode ERR vs. IF TJ = 150°C 10000 16 14 300V Cies VGE (V) 12 10 8 6 400V Capacitance (pF) 1000 100 Coes Cres 4 2 0 10 0 20 40 60 80 100 0 20 40 60 80 VCE (V) Q G, Total Gate Charge (nC) Fig. 22- Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz Fig. 23 - Typical Gate Charge vs. VGE ICE = 15A; L = 2500µH 8 www.irf.com IRGIB15B60KD1P 10 Thermal Response ( Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.02 0.01 τJ τJ τ1 τ1 R1 R1 τ2 R2 R2 R3 R3 τ3 τC τ τ3 0.1 Ri (°C/W) τi (sec) 0.437 0.000542 1.087 1.376 0.127526 2.702 τ2 0.01 Ci= τi/Ri Ci τi/Ri SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 10 Thermal Response ( Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.02 0.01 τJ R1 R1 τJ τ1 τ2 R2 R2 R3 R3 τ3 R4 R4 τC τ τ2 τ3 τ4 τ4 Ri (°C/W) 0.8631 0.6432 1.1937 1.9013 τi (sec) 0.000202 0.001053 0.055415 2.335 0.1 τ1 0.01 Ci= τi/Ri Ci i/Ri SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 10 100 0.001 1E-006 1E-005 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) www.irf.com 9 IRGIB15B60KD1P L L 0 DUT 1K VCC 80 V + - DUT Rg 480V Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit Driver DC diode clamp / DUT L 360V - 5V DUT / DRIVER Rg DUT VCC Fig.C.T.3 - S.C.SOA Circuit VCC ICM Fig.C.T.4 - Switching Loss Circuit R= DUT Rg VCC Fig.C.T.5 - Resistive Load Circuit 10 www.irf.com IRGIB15B60KD1P 600 500 400 90% ICE 30 tf 25 20 800 700 600 500 V CE (V) TEST CURRENT 40 35 tr 30 25 90% test current VCE (V) I CE (A) 300 200 100 0 15 10 5 0 Eoff Loss 5% V CE 5% ICE 300 200 100 0 Eon Loss -100 0.2 0.4 time (µs) 0.6 10% test current 5% V CE 15 10 5 0 -5 -100 0.1 0.3 -5 0.7 0.5 time(µs) Fig. WF1- Typ. Turn-off Loss Waveform @ TJ = 150°C using Fig. CT.4 100 0 -100 -200 -300 V F (V) -400 -500 -600 -700 -800 -900 0.10 0.20 0.30 time (µS) 0.40 Peak IRR Fig. WF2- Typ. Turn-on Loss Waveform @ TJ = 150°C using Fig. CT.4 450 400 350 300 400 350 300 250 20 QRR t RR 15 10 5 VCE (V) -5 -10 10% Peak IRR 200 150 100 50 0 0 10 20 30 40 50 150 100 50 0 -50 -15 -20 -25 -30 0.50 Fig. WF3- Typ. Diode Recovery Waveform @ TJ = 150°C using Fig. CT.4 Time (uS) Fig. WF4- Typ. S.C Waveform @ TC = 150°C using Fig. CT.3 www.irf.com ICE (A) 0 I F (A) 250 200 11 ICE (A) 400 20 IRGIB15B60KD1P TO-220 Full-Pak Package Outline Dimensions are shown in millimeters (inches) TO-220 Full-Pak Part Marking Information E X AM P L E : T H IS IS AN IR F I8 4 0 G W IT H AS S E M B L Y L O T CO D E 3 4 3 2 AS S E M B L E D O N W W 2 4 1 9 9 9 IN T H E AS S E M B L Y L IN E "K " IN T E R N AT IO N AL R E CT I F IE R L OGO AS S E M B L Y L O T CO D E P AR T N U M B E R IR F I8 4 0 G 924K 34 32 Note: " P" in assembly line position indicates "Lead-Free" D AT E CO D E Y E AR 9 = 1 9 9 9 W E E K 24 L IN E K TO-220 FullPak packages are not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/03 12 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/