SPD22N08S2L-50

SPD22N08S2L-50 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 75 V • Enhancement mode R DS(on) 50 mΩ ID 25 A • Logic Level • 175°C operating temperature P- TO252 -3-11 • Avalanche rated • dv/dt rated Type SPD22N08S2L-50 Package Ordering Code P- TO252 -3-11 Q67060-S6062 Marking 2N08L50 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A 25 TC=22°C 18 Pulsed drain current ID puls 100 TC=25°C EAS 94 Repetitive avalanche energy, limited by Tjmax 1) EAR 7.5 Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 75 W -55... +175 °C Avalanche energy, single pulse mJ ID=22A, V DD=25V, RGS=25Ω kV/µs IS=22A, V DS=60V, di/dt=200A/µs, Tjmax=175°C TC=25°C Operating and storage temperature T j , Tstg IEC climatic category; DIN IEC 68-1 55/175/56 Page 1 2003-05-09 SPD22N08S2L-50 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - 1.34 2 Thermal resistance, junction - ambient, leaded RthJA - - 100 SMD version, device on PCB: RthJA - - 75 - - 50 @ min. footprint @ 6 cm2 cooling area 2) K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 75 - - VGS(th) 1.2 1.6 2 Static Characteristics Drain-source breakdown voltage V V GS=0V, ID=1mA Gate threshold voltage, VGS = V DS ID=31µA Zero gate voltage drain current µA IDSS V DS=75V, VGS=0V, Tj=25°C - 0.01 1 V DS=75V, VGS=0V, Tj=125°C - 1 100 IGSS - 1 100 nA RDS(on) - 48 65 mΩ RDS(on) - 38 50 Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=4.5V, I D=11A Drain-source on-state resistance V GS=10V, I D=11A 1Defined by design. Not subject to production test. 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2003-05-09 SPD22N08S2L-50 Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ. max. 13 25 - S pF Dynamic Characteristics Transconductance gfs VDS ≥2*ID *RDS(on)max, ID =22A Input capacitance Ciss VGS =0V, VDS =25V, - 640 850 Output capacitance Coss f=1MHz - 124 165 Reverse transfer capacitance Crss - 49 74 Turn-on delay time td(on) VDD =37V, VGS =10V, - 5 7.5 Rise time tr ID =22A, - 22 33 Turn-off delay time td(off) RG =9.1Ω - 33 50 Fall time tf - 18 27 - 2 2.7 - 8 12 - 25 33 V(plateau) VDD =60V, ID =22A - 3.3 - V IS - - 25 A - - 100 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =60V, ID =22A VDD =60V, ID =22A, nC VGS =0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TC=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD VGS =0V, IF =22A - 0.9 1.3 V Reverse recovery time trr VR =40V, IF =lS , - 44 55 ns Reverse recovery charge Qrr diF /dt=100A/µs - 66 83 nC Page 3 2003-05-09 SPD22N08S2L-50 1 Power dissipation 2 Drain current Ptot = f (TC) ID = f (T C) parameter: VGS≥ 4 V parameter: VGS≥ 10 V SPD22N08S2L-50 80 SPD22N08S2L-50 28 A W 24 22 60 ID P tot 20 50 18 16 40 14 12 30 10 8 20 6 4 10 2 0 0 20 40 60 80 0 100 120 140 160 °C 190 0 20 40 60 80 100 120 140 160 °C 190 TC TC 3 Safe operating area 4 Max. transient thermal impedance ID = f ( VDS ) Z thJC = f (t p) parameter : D = 0 , TC = 25 °C parameter : D = t p/T 10 3 SPD22N08S2L-50 10 1 SPD22N08S2L-50 K/W A t = 5.4µs p 2 ID 10 10 µs Z thJC 10 0 10 -1 10 -2 0.20 V DS /I D D = 0.50 = 100 µs 0.10 DS (on ) 10 1 R 0.05 10 single pulse -3 0.02 0.01 1 ms 10 0 10 -1 10 0 10 1 V 10 2 10 -4 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 tp VDS Page 4 2003-05-09 0 SPD22N08S2L-50 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (V DS); T j=25°C RDS(on) = f (I D) parameter: tp = 80 µs parameter: VGS SPD22N08S2L-50 60 A SPD22N08S2L-50 160 Ptot = 75W c h f V [V] GS a e 45 ID 40 d 35 30 3.0 b 3.5 c 4.0 d 4.5 e 5.0 f 5.5 g 6.0 h R DS(on) g 50 d mΩ 120 100 e 80 10.0 f 25 60 c 20 g 15 40 10 h b 20 VGS [V] = 5 c 4.0 a 0 0 2 4 6 8 V d 4.5 e f 5.0 5.5 g h 6.0 10.0 0 11 0 4 8 12 16 20 24 28 32 36 A 42 ID VDS 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( V GS ); V DS≥ 2 x ID x RDS(on)max g fs = f(I D); T j=25°C parameter: tp = 80 µs parameter: g fs 50 40 S A gFS ID 30 30 25 20 20 15 10 10 5 0 0 1 2 3 4 0 V 6 VGS Page 5 0 5 10 15 20 25 30 A ID 40 2003-05-09 SPD22N08S2L-50 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj) VGS(th) = f (T j) parameter : ID = 11 A, VGS = 10 V parameter: VGS = VDS SPD22N08S2L-50 190 3 mΩ V 140 V GS(th) R DS(on) 160 120 100 2 1.5 155µA 80 31µA 98% 60 1 typ 40 0.5 20 0 -60 -20 20 60 140 °C 100 0 -60 200 -20 20 60 °C 100 Tj 180 Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (V DS) IF = f (V SD) parameter: VGS=0V, f=1 MHz parameter: T j , tp = 80 µs 10 4 10 nF A Ciss 3 10 1 10 0 C IF 10 2 SPD22N08S2L-50 Coss 10 2 T j = 25 °C typ T j = 175 °C typ Crss T j = 25 °C (98%) T j = 175 °C (98%) 10 1 0 10 5 10 15 20 V 30 VDS -1 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 6 2003-05-09 SPD22N08S2L-50 13 Typ. avalanche energy 14 Typ. gate charge E AS = f (T j) VGS = f (QGate) par.: I D=22A, VDD = 25 V, RGS = 25 Ω parameter: ID = 25 A pulsed 100 SPD22N08S2L-50 16 mJ V 80 12 VGS EAS 70 60 10 0,2 VDS max 0,8 VDS max 50 8 40 6 30 4 20 2 10 0 20 40 60 80 100 120 140 °C Tj 0 180 0 4 8 12 16 20 24 28 32 nC 40 QGate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) parameter: ID=10 mA 92 SPD22N08S2L-50 V V(BR)DSS 88 86 84 82 80 78 76 74 72 70 68 -60 -20 20 60 100 140 °C 200 Tj Page 7 2003-05-09 SPD22N08S2L-50 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPD22N08S2L-50, for simplicity the device is referred to by the term SPD22N08S2L-50 throughout this documentation. Page 8 2003-05-09