FDG327NZ

FDG327NZ August 2008 FDG327NZ 20V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small package. Features • 1.5 A, 20 V. RDS(ON) = 90 mΩ @ VGS = 4.5 V. RDS(ON) = 100 mΩ @ VGS = 2.5 V RDS(ON) = 140 mΩ @ VGS = 1.8 V • Fast switching speed • Low gate charge • High performance trench technology for extremely low RDS(ON) • High power and current handling capability. Applications • DC/DC converter • Power management • Load switch S D D G Pin 1 D D SC70-6 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings 20 ±8 (Note 1a) Units V A W °C 1.5 6 0.42 0.38 –55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 300 333 °C/W Package Marking and Ordering Information Device Marking .37 Device FDG327NZ Reel Size 7’’ Tape width 8mm Quantity 3000 units ©2008 Fairchild Semiconductor Corporation FDG327NZ Rev C1(W) FDG327NZ Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSS TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage (Note 2) Test Conditions VGS = 0 V, ID = 250 µA Min Typ 20 11 Max Units V mV/°C Off Characteristics ID = 250 µA, Referenced to 25°C VDS = 16 V, VGS = ± 8 V, VGS = 0 V VDS = 0 V 1 ±10 µA µA On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) ID(on) gFS Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 4.5 V, ID = 1.5 A VGS = 2.5 V, ID = 1.4 A VGS = 1.8 V, ID = 1.2 A VGS = 4.5 V, ID = 1.5 A, TJ =125°C VGS = 4.5V, VDS = 5 V VDS = 10 V, ID = 1.5 A 0.4 0.7 –2 68 77 90 86 1.5 V mV/°C 90 100 140 123 mΩ 3 2.2 A S Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) VDS = 10 V, f = 1.0 MHz V GS = 0 V 412 81 44 1.9 pF pF pF Ω VGS = 15 mV, f = 1.0 MHz Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge VDD = 10 V, VGS = 4.5 V, ID = 1 A, RGEN = 6 Ω 6.2 2.3 18 2.9 13 10 33 10 6 ns ns ns ns nC nC nC VDS = 10 V, VGS = 4.5 V ID = 1.5 A, 4.2 0.4 1 Drain–Source Diode Characteristics and Maximum Ratings VSD trr Qrr Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IF = 1.5 A, IS = 0.32 A (Note 2) 0.6 4 2 1.2 V nS nC diF/dt = 100 A/µs Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 300°C/W when mounted on a 1in2 pad of 2 oz copper. b) 333°C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDG327NZ Rev C1(W) FDG327NZ Typical Characteristics 10 1.8V ID, DRAIN CURRENT (A) 8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS= 4.5V 2.5V V 1.8 2.0V VGS=1.5V 1.6 6 1.4 1.8V 2.0V 1.5V 4 1.2 2.5V 3.0V 2 1 4.5V 0 0 1 2 3 VDS, DRAIN TO SOURCE VOLTAGE (V) 0.8 0 2 4 6 8 10 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.22 RDS(ON), ON-RESISTANCE (OHM) 1.5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 o ID = 1.5A VGS = 4.5V ID = 0.8A 0.17 TA = 125oC 0.12 TA = 25oC 0.07 0.02 125 150 0.5 1.5 2.5 3.5 4.5 TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation withTemperature. 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 25 C IS, REVERSE DRAIN CURRENT (A) VDS = 5.0V ID, DRAIN CURRENT (A) 8 TA = -55oC o VGS = 0V 1 TA = 125oC 25oC -55oC 125 C 6 o 0.1 4 0.01 2 0.001 0 0.5 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDG327NZ Rev C1(W) FDG327NZ Typical Characteristics 5 VGS, GATE-SOURCE VOLTAGE (V) 600 ID = 1.5A 4 VDS = 5V 10V CAPACITANCE (pF) 500 f = 1 MHz VGS = 0 V CISS 3 15V 400 300 200 2 COSS 100 1 CRSS 0 0 1 2 3 4 5 Qg, GATE CHARGE (nC) 0 0 5 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 10 Figure 8. Capacitance Characteristics. 20 ID, DRAIN CURRENT (A) 1 100µs 1ms 10ms 100ms 1s 10s DC P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT SINGLE PULSE RθJA = 333°C/W TA = 25°C 15 10 0.1 VGS = 4.5V SINGLE PULSE RθJA = 333oC/W TA = 25oC 5 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) 0 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 RθJA(t) = r(t) * RθJA RθJA = 333 C/W P(pk) t1 t2 SINGLE PULSE 0.02 0.01 o 0.2 0.1 0.1 0.05 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.01 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDG327NZ Rev C1(W) FDG327NZ TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. 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Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I35 FDG327NZ Rev.C1(W) www.fairchildsemi.com