FDG327NZ

FDG327NZ FDG327NZ 20V N-Channel PowerTrench MOSFET General Description Features • 1.5 A, 20 V. This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small package. RDS(ON) = 90 mΩ @ VGS = 4.5 V. RDS(ON) = 100 mΩ @ VGS = 2.5 V RDS(ON) = 140 mΩ @ VGS = 1.8 V • Fast switching speed • Low gate charge Applications • High performance trench technology for extremely low RDS(ON) • DC/DC converter • Power management • High power and current handling capability. • Load switch S D D G Pin 1 SC70-6 D D Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 20 V VGSS Gate-Source Voltage ±8 ID Drain Current – Continuous (Note 1a) – Pulsed 1.5 A 6 PD Power Dissipation for Single Operation TJ, TSTG Operating and Storage Junction Temperature Range (Note 1a) (Note 1b) 0.42 W 0.38 –55 to +150 °C °C/W Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 300 RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 333 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity .37 FDG327NZ 7’’ 8mm 3000 units 2008 Semiconductor Components Industries, LLC. September-2017, Rev. 2 Publiaction Order Number: FDG327NZ/D Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics ID = 250 µA BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250 µA, Referenced to 25°C VDS = 16 V, VGS = 0 V 1 µA IGSS Gate–Body Leakage VGS = ± 8 V, VDS = 0 V ±10 µA 1.5 V On Characteristics 20 V 11 mV/°C (Note 2) VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS(th) ∆VGS(th) ∆TJ Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient 0.4 0.7 RDS(on) Static Drain–Source On–Resistance ID(on) On–State Drain Current VGS = 4.5 V, ID = 1.5 A VGS = 2.5 V, ID = 1.4 A VGS = 1.8 V, ID = 1.2 A VGS = 4.5 V, ID = 1.5 A, TJ =125°C VGS = 4.5V, VDS = 5 V gFS Forward Transconductance VDS = 10 V, ID = 1.5 A 9 S VDS = 10 V, f = 1.0 MHz V GS = 0 V 412 pF 81 pF 44 pF VGS = 15 mV, f = 1.0 MHz 1.9 Ω VDD = 10 V, VGS = 4.5 V, 6.2 13 ns 2.3 10 ns 18 33 ns 2.9 10 ns 4.2 6 nC –2 68 77 90 86 mV/°C 90 100 140 123 mΩ 3 A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time tf Turn–Off Fall Time Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge (Note 2) VDS = 10 V, VGS = 4.5 V ID = 1 A, RGEN = 6 Ω ID = 1.5 A, 0.4 nC 1 nC Drain–Source Diode Characteristics and Maximum Ratings trr Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge VSD VGS = 0 V, IS = 0.32 A IF = 1.5 A, diF/dt = 100 A/µs 0.6 (Note 2) 1.2 V 4 nS 2 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 300°C/W when mounted on a 1in2 pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% www.onsemi.com 2 b) 333°C/W when mounted on a minimum pad of 2 oz copper. FDG327NZ Electrical Characteristics FDG327NZ Typical Characteristics 1.8 VGS= 4.5V 2.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 10 ID, DRAIN CURRENT (A) 1.8V 2.5V V 8 6 1.5V 4 2 VGS=1.5V 1.6 1.8V 1.4 2.0V 1.2 2.5V 3.0V 4.5V 1 0.8 0 0 1 2 0 3 2 4 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 10 0.22 ID = 1.5A VGS = 4.5V 1.4 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 8 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.5 1.3 1.2 1.1 1 0.9 0.8 0.7 ID = 0.8A 0.17 TA = 125oC 0.12 TA = 25oC 0.07 0.02 -50 -25 0 25 50 75 100 125 150 0.5 1.5 o TJ, JUNCTION TEMPERATURE ( C) 2.5 3.5 4.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation withTemperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 10 TA = -55oC o IS, REVERSE DRAIN CURRENT (A) VDS = 5.0V ID, DRAIN CURRENT (A) 6 ID, DRAIN CURRENT (A) 25 C 8 o 125 C 6 4 2 VGS = 0V 1 TA = 125oC 0.1 25oC -55oC 0.01 0.001 0.0001 0 0.5 1 1.5 2 0 2.5 Figure 5. Transfer Characteristics. 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.onsemi.com 3 FDG327NZ Typical Characteristics 600 f = 1 MHz VGS = 0 V VDS = 5V ID = 1.5A 10V 500 4 CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 5 15V 3 2 1 CISS 400 300 200 COSS 100 CRSS 0 0 0 1 2 3 4 0 5 5 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 100µs 1ms 10ms 100ms 1s 1 10s DC VGS = 4.5V SINGLE PULSE RθJA = 333oC/W TA = 25oC 0.01 0.1 1 10 100 SINGLE PULSE RθJA = 333°C/W TA = 25°C 15 10 5 0 0.0001 0.001 0.01 VDS, DRAIN-SOURCE VOLTAGE (V) 0.1 1 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 20 20 RDS(ON) LIMIT 0.1 15 Figure 8. Capacitance Characteristics. P(pk), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 10 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) * RθJA o RθJA = 333 C/W 0.2 0.1 0.1 P(pk) 0.05 t1 0.02 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.01 0.0001 0.001 0.01 0.1 1 10 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. www.onsemi.com 4 100 1000 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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