FDG6322C_08

June 2008 FDG6322C Dual N & P Channel Digital FET General Description These dual N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values. Features N-Ch 0.22 A, 25 V, RDS(ON) = 4.0 Ω @ VGS= 4.5 V, RDS(ON) = 5.0 Ω @ VGS= 2.7 V. P-Ch -0.41 A,-25V, RDS(ON) = 1.1 Ω @ VGS= -4.5V, RDS(ON) = 1.5 Ω @ VGS= -2.7V. Very small package outline SC70-6. Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V). Gate-Source Zener for ESD ruggedness (>6kV Human Body Model). SC70-6 SOT-23 SuperSOTTM-6 SOT-8 SO-8 SOIC-14 G2 D1 S2 1 Q1 6 2 pin 1 5 Q2 SC70-6 Mark: .22 S1 G1 D2 3 4 Absolute Maximum Ratings Symbol Parameter TA = 25oC unless other wise noted N-Channel P-Channel Units VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed 25 8 0.22 0.65 (Note 1) -25 -8 -0.41 -1.2 0.3 -55 to 150 6 V V A PD TJ,TSTG ESD Maximum Power Dissipation W °C kV Operating and Storage Temperature Range Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm) Thermal Resistance, Junction-to-Ambient THERMAL CHARACTERISTICS RθJA (Note1) 415 °C/W © 2008 Fairchild Semiconductor Corporation FDG6322C Rev.F1 DMOS Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Type N-Ch P-Ch N-Ch P-Ch N-Ch TJ = 55°C Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA VGS = 0 V, ID = -250 µA ID = 250 µA, Referenced to 25 oC ID = -250 µA, Referenced to 25 oC VDS = 20 V, VGS= 0 V, VDS =-20 V, VGS = 0 V, TJ = 55°C VGS = 8 V, VDS = 0 V VGS = -8 V, VDS = 0 V 25 -25 25 -22 1 10 V mV/oC µA ∆BVDSS/∆TJ IDSS IDSS IGSS Breakdown Voltage Temp. Coefficient Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current Gate - Body Leakage Current P-Ch N-Ch P-Ch -1 -10 100 -100 µA nA nA ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage Gate Threshold Voltage Temp. Coefficient Static Drain-Source On-Resistance VDS = VGS, ID = 250 µA VDS = VGS, ID = -250 µA ID = 250 µA, Referenced to 25 o C ID= -250 µA, Referenced to 25 o C VGS = 4.5 V, ID = 0.22 A TJ =125°C VGS = 2.7 V, ID = 0.19 A VGS = -4.5 V, ID = -0.41 A TJ =125°C VGS = -2.7 V, ID = -0.25 A N-Ch P-Ch N-Ch P-Ch N-Ch 0.65 -0.65 0.85 -0.82 -2.1 2.1 2.6 5.3 3.7 1.5 -1.5 V mV/ oC ∆VGS(th)/∆TJ RDS(ON) 4 7 5 1.1 1.9 1.5 Ω P-Ch 0.85 1.2 1.15 ID(ON) gFS On-State Drain Current Forward Transconductance VGS = 4.5 V, VDS = 5 V VGS = -4.5 V, VDS = -5 V VDS = 5 V, ID= 0.22 A VDS = -5 V, ID = -0.5 A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 0.22 -0.41 0.2 0.9 9.5 62 6 34 1.3 10 A S DYNAMIC CHARACTERISTICS Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance N-Channel VDS = 10 V, VGS = 0 V, f = 1.0 MHz P-Channel VDS = -10 V, VGS = 0 V, f = 1.0 MHz pF FDG6322C Rev.F1 Electrical Characteristics (continued) SWITCHING CHARACTERISTICS (Note 2) Symbol Parameter Conditions Type N-Ch P-Ch N-Ch P-Ch Min Typ Max Units tD(on) tr tD(off) tf Qg Qgs Qgd Turn - On Delay Time Turn - On Rise Time N-Channel VDD = 5 V, ID = 0.5 A, VGS = 4.5 V, RGEN = 50 Ω P-Channel VDD = -5 V, ID = -0.5 A, VGS = -4.5 V, RGEN = 50 Ω N-Channel VDS= 5 V, ID = 0.22 A, VGS = 4.5 V P- Channel VDS = -5 V, ID = -0.41 A, VGS = -4.5 V 5 7 4.5 8 4 55 3.2 35 0.29 1.1 0.12 0.31 0.03 0.29 10 15 10 16 8 80 7 60 0.4 1.5 nS nS Turn - Off Delay Time Turn - Off Fall Time N-Ch P-Ch N-Ch P-Ch nS nS Total Gate Charge Gate-Source Charge Gate-Drain Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch nC nC nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.5 A VGS = 0 V, IS = -0.5 A 0.25 -0.25 0.8 -0.85 1.2 -1.2 A V (Note 2) (Note 2) Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. RθJA = 415OC/W on minimum mounting pad on FR-4 board in still air. 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. FDG6322C Rev.F1 Typical Electrical Characteristics: N-Channel 0.5 I D , DRAIN-SOURCE CURRENT (A) 5 DRAIN-SOURCE ON-RESISTANCE VGS =4.5V 3.5V 3.0V 0.3 R DS(ON), NORMALIZED 0.4 4.5 4 3.5 VGS = 2.5V 2.7V 3.0V 3.5V 2.7V 2.5V 0.2 3 2.5 2 4.0V 2.0V 0.1 4.5V 5.0V 0 0 1 2 3 4 5 0 0.1 0.2 I D , DRAIN CURRENT (A) 0.3 0.4 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.8 DRAIN-SOURCE ON-RESISTANCE RDS(ON) , NORMALIZED 20 1.6 1.4 1.2 1 0.8 0.6 -50 V GS = 4.5V RDS(ON) ON-RESISTANCE(OHM) , I D = 0.22A ID = 0.10A 16 12 8 TA =125°C 4 25°C 0 1 2 3 4 5 -25 0 25 50 75 100 T , JUNCTION TEMPERATURE (°C) J 125 150 VGS ,GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. VDS = 5V I D , DRAIN CURRENT (A) 0.15 TJ = -55°C I S , REVERSE DRAIN CURRENT (A) 0.2 0.4 25°C 125°C VGS = 0V 0.1 TJ = 125°C 0.01 0.1 25°C -55°C 0.05 0.001 0 0.5 0.0001 1 1.5 2 2.5 3 VGS , GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 1.2 VSD , BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDG6322C.Rev F1 Typical Electrical Characteristics: N-Channel (continued) 6 V GS , GATE-SOURCE VOLTAGE (V) 30 I D = 0.22A 5 4 3 2 1 0 0 0.1 0.2 VDS = 5V 10V CAPACITANCE (pF) 15 Ciss 8 Coss 5 Crss 3 2 0.1 f = 1 MHz VGS = 0 V 0.3 1 3 10 25 V DS , DRAIN TO SOURCE VOLTAGE (V) 0.3 0.4 0.5 0.6 Q g , GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 1 50 I D , DRAIN CURRENT (A) 0.3 RD POWER (W) S( O L N) IM IT 10m s 100 ms 1s 40 SINGLE PULSE R θJA=415°C/W TA= 25°C 30 0.1 10 0.03 s 20 V GS = 4.5V SINGLE PULSE RθJA = 415 °C/W T A = 25°C 0.8 2 5 DC 10 0.01 0.4 10 25 40 0 0.0001 0.001 0.01 0.1 1 10 200 VDS , DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. FDG6322C Rev.F1 Typical Electrical Characteristics: P-Channel 1.2 -ID , DRAIN-SOURCE CURRENT (A) 2.5 DRAIN-SOURCE ON-RESISTANCE VGS =-4.5V -3.0V 0.9 -2.7V R DS(ON) , NORMALIZED -2.5V 2 VGS = -2.0V 0.6 1.5 -2.5V -2.7V -3.0V -3.5V -4.5V -2.0V 0.3 1 -1.5V 0 0 1 2 3 4 -VDS , DRAIN-SOURCE VOLTAGE (V) 0.5 0 0.2 0.4 0.6 0.8 1 1.2 -I D , DRAIN CURRENT (A) Figure 11. On-Region Characteristics. Figure 12. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 DRAIN-SOURCE ON-RESISTANCE 5 I D = -0.41A 1.4 R DS(ON) ,ON-RESISTANCE(OHM) I D = -0.2A 4 V GS = -4.5V R DS(ON) , NORMALIZED 1.2 3 1 2 TJ = 125 ° C 1 0.8 2 5° C 0 1 2 3 4 5 0.6 -50 -25 0 25 50 75 100 125 150 TJ , JUNCTION TEMPERATURE (°C) -VGS , GATE TO SOURCE VOLTAGE (V) Figure 13. On-Resistance Variation with Temperature. Figure 14. On-Resistance Variation with Gate-to-Source Voltage. VDS = -5V -ID , DRAIN CURRENT (A) 0.8 TJ = -55°C 25°C 125°C -I S , REVERSE DRAIN CURRENT (A) 1 1 VGS = 0V 0.1 TJ = 125°C 25°C 0.6 0.01 -55°C 0.4 0.001 0.2 0 0.5 1 1.5 2 2.5 3 0.0001 0.2 0.4 0.6 0.8 1 1.2 -V , GATE TO SOURCE VOLTAGE (V) GS -VSD , BODY DIODE FORWARD VOLTAGE (V) Figure 15. Transfer Characteristics. Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. FDG6322C Rev.F1 1 Typical Electrical Characteristics: P-Channel (continued) 5 -V GS , GATE-SOURCE VOLTAGE (V) 200 I D = -0.41A VDS = -5V -10V -15V CAPACITANCE (pF) 80 4 Ciss 30 3 Coss 2 10 5 1 3 0.1 f = 1 MHz V GS = 0 V 0.3 1 2 5 Crss 0 0 0.4 0.8 Q g , GATE CHARGE (nC) 1.2 1.6 10 25 -VDS , DRAIN TO SOURCE VOLTAGE (V) Figure 17. Gate Charge Characteristics. Figure 18. Capacitance Characteristics. 3 50 -I D , DRAIN CURRENT (A) 1 0.5 S RD (O N) LI T MI 1m s 10 ms POWER (W) 40 10 0m s 1s 10 s DC SINGLE PULSE R θJA=415°C/W TA= 25°C 30 0.1 0.05 20 VGS = -4.5V SINGLE PULSE RθJA = 415°C A TA = 25°C 0.2 0.5 1 2 10 0.01 0.1 5 10 25 40 0 0.0001 0.001 0.01 0.1 1 10 200 - V DS , DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE TIME (SEC) Figure 19. Maximum Safe Operating Area. Figure 20. Single Pulse Maximum Power Dissipation. FDG6322C Rev.F1 Typical Thermal Characteristics: N & P-Channel (continued) 1 TRANSIENT THERMAL RESISTANCE r(t), NORMALIZED EFFECTIVE 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse P(pk) R θJA (t) = r(t) * R θJA R θJA =415 °C/W t1 t2 TJ - TA = P * R θJA (t) Duty Cycle, D = t 1/ t 2 0.002 0.0001 0.001 0.01 0.1 t 1, TIME (sec) 1 10 100 200 Figure 21. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in note 1. Transient thermalresponse will change depending on the circuit board design. FDG6322C Rev.F1 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative / In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Preliminary First Production No Identification Needed Obsolete Full Production Not In Production © 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com