FDMA1027PT

FDMA1027PT Dual P-Channel PowerTrench® MOSFET September 2008 FDMA1027PT Dual P-Channel PowerTrench® MOSFET –20 V, –3 A, 120 mΩ Features Max rDS(on) = 120 mΩ at VGS = -4.5 V, ID = -3.0 A Max rDS(on) = 160 mΩ at VGS = -2.5 V, ID = -2.5 A Max rDS(on) = 240 mΩ at VGS = -1.8 V, ID = -1.0 A Low profile - 0.55 mm maximum - in the new package MicroFET 2x2 Thin RoHS Compliant tm General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. The MicroFET 2x2 Thin package offers exceptional thermal performance for it's physical size and is well suited to linear mode applications. Applications Battery management Load switch Battery protection PIN 1 S1 G1 D2 D1 D2 S1 G1 D1 G2 S2 MicroFET 2X2 Thin MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed PD TJ, TSTG Power Dissipation for Single Operation Power Dissipation for Single Operation TA = 25 °C TA = 25 °C (Note 1a) (Note 1b) TA = 25 °C (Note 1a) Ratings -20 ±8 -3 -6 1.4 0.7 -55 to +150 Units V V A W °C Operating and Storage Junction Temperature Range Thermal Characteristics RθJA RθJA RθJA RθJA Thermal Resistance, Junction to Ambient (Single Operation) Thermal Resistance, Junction to Ambient (Single Operation) Thermal Resistance, Junction to Ambient (Dual Operation) Thermal Resistance, Junction to Ambient (Dual Operation) (Note 1a) (Note 1b) 86 173 69 151 °C/W Package Marking and Ordering Information Device Marking 27 Device FDMA1027PT Package MicroFET 2x2 Thin 1 Reel Size 7 ’’ Tape Width 8 mm Quantity 3000 units www.fairchildsemi.com ©2008 Fairchild Semiconductor Corporation FDMA1027PT Rev.B1 4 3 D2 3 4 5 2 5 6 1 2 1 6 D1 G2 S2 FDMA1027PT Dual P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250 µA, VGS = 0 V ID = -250 µA, referenced to 25 °C VDS = -16 V, VGS = 0 V VGS = ±8 V, VDS = 0 V -20 -12 -1 ±100 V mV/°C µA nA On Characteristics VGS(th) ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient VGS = VDS, ID = -250 µA ID = -250 µA, referenced to 25 °C VGS = -4.5 V, ID = -3.0 A VGS = -2.5 V, ID = -2.5 A rDS(on) Drain to Source On Resistance VGS = -1.8 V, ID = -1.0 A VGS = -4.5 V, ID = -3.0 A , TJ = 125 °C ID(on) gFS On to State Drain Current Forward Transconductance VGS = -4.5 V, VDS = -5 V VDS = -5 V, ID = -3.0 A -20 7 -0.4 -0.7 2 90 120 172 118 120 160 240 160 A S mΩ -1.3 V mV/°C Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -10 V, VGS = 0 V, f = 1 MHz 435 80 45 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Gate Charge Gate to Drain “Miller” Charge VDD = -10 V, ID = -3.0 A VGS = -4.5 V VDD = -10 V, ID = -1.0 A VGS = -4.5 V, RGEN = 6 Ω 9 11 15 6 4 0.8 0.9 18 19 27 12 6 ns ns ns ns nC nC nC Drain-Source Diode Characteristics IS VSD trr Qrr Maximum continuous Drain-Source Diode Forward Current Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = -1.1 A (Note 2) -0.8 17 6 -1.1 -1.2 A V ns nC IF = -3.0 A, di/dt = 100 A/µs Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 86 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 173 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%. ©2008 Fairchild Semiconductor Corporation FDMA1027PT Rev.B1 2 www.fairchildsemi.com FDMA1027PT Dual P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 6 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 3.0 VGS = -4.5 V -ID, DRAIN CURRENT (A) 5 VGS = -2 V 2.5 2.0 1.5 1.0 PULSE DURATION = 300 µs DUTY CYCLE = 2%MAX VGS = -1.5 V VGS = -1.8 V VGS = -2 V 4 3 2 1 0 0 0.5 VGS = -3.5 V VGS = -3 V VGS = -2.5 V VGS = -1.8 V VGS = -2.5 V PULSE DURATION = 300 µs DUTY CYCLE = 2% MAX VGS = -1.5 V VGS = -3 V VGS = -3.5 V VGS = -4.5 V 1.0 1.5 2.0 2.5 0.5 0 1 2 3 4 5 6 -ID, DRAIN CURRENT (A) -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 0.28 SOURCE ON-RESISTANCE (Ω) 1.4 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.3 1.2 1.1 1.0 0.9 0.8 -50 ID = -3 A VGS = -4.5 V 0.24 0.20 0.16 PULSE DURATION = 300 µs DUTY CYCLE = 2% MAX rDS(on), DRAIN TO ID = -1.5 A TJ = 125 oC 0.12 0.08 TJ = 25 oC -25 0 25 50 75 100 125 150 0.04 0 2 4 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On Resistance vs Junction Temperature 6 -IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance vs Gate to Source Voltage 10 -ID, DRAIN CURRENT (A) 5 4 3 2 PULSE DURATION = 300 µs DUTY CYCLE = 2% MAX VGS = 0 V 1 TJ = 125 oC VDS = -5 V 0.1 0.01 0.001 TJ = 25 oC TJ = 125 oC TJ = 25 oC TJ = -55 oC 1 0 0 0.5 1.0 1.5 2.0 2.5 -VGS, GATE TO SOURCE VOLTAGE (V) TJ = -55 oC 0.0001 0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2008 Fairchild Semiconductor Corporation FDMA1027PT Rev.B1 3 www.fairchildsemi.com FDMA1027PT Dual P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 5 -VGS, GATE TO SOURCE VOLTAGE (V) ID = -3 A 700 600 CAPACITANCE (pF) 4 VDD = -5 V 500 400 300 200 Ciss 3 VDD = -10 V 2 VDD = -15 V 1 0 0 1 2 3 4 5 Qg, GATE CHARGE (nC) Coss 100 0 0 Crss f = 1 MHz VGS = 0 V 4 8 12 16 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 1000 100 THIS AREA IS LIMITED BY rDS(on) 10 P(PK), PEAK TRANSIENT POWER (W) -ID, DRAIN CURRENT (A) 100 100 us VGS = -10 V SINGLE PULSE RθJA = 173 oC/W TA = 25 oC 1 SINGLE PULSE TJ = MAX RATED RθJA = 173 oC/W TA = 25 oC 1 ms 10 ms 10 0.1 100 ms 1s 10 s DC 1 0.2 -4 10 0.01 0.1 1 10 100 10 -3 10 -2 10 -1 1 10 100 1000 -VDS, DRAIN to SOURCE VOLTAGE (V) t, PULSE WIDTH (sec) Figure 9. Forward Bias Safe Operating Area 2 Figure 10. Single Pulse Maximum Power Dissipation 1 NORMALIZED THERMAL IMPEDANCE, ZθJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE RθJA = 173 C/W o NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA -1 0.01 -4 10 10 -3 10 -2 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 11. Junction-to-Ambient Transient Thermal Response Curve ©2008 Fairchild Semiconductor Corporation FDMA1027PT Rev.B1 4 www.fairchildsemi.com FDMA1027PT Dual P-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout ©2008 Fairchild Semiconductor Corporation FDMA1027PT Rev.B1 5 www.fairchildsemi.com FDMA1027PT Dual P-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * ™ ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * FPS™ F-PFS™ FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® ® tm PowerTrench® Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ The Power Franchise® tm PDP SPM™ Power-SPM™ TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ ™ TinyPower™ Saving our world, 1mW /W /kW at a time™ TinyPWM™ SmartMax™ TinyWire™ SMART START™ µSerDes™ SPM® STEALTH™ SuperFET™ UHC® SuperSOT™-3 Ultra FRFET™ SuperSOT™-6 UniFET™ SuperSOT™-8 VCX™ SupreMOS™ VisualMax™ SyncFET™ ® * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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The datasheet is for reference information only. Rev. I36 Preliminary First Production No Identification Needed Obsolete Full Production Not In Production ©2008 Fairchild Semiconductor Corporation FDMA1027PT Rev.B1 6 www.fairchildsemi.com