FDMA1028NZ

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. Dual N-Channel PowerTrench“ MOSFET Features General Description „ x 3.7 A, 20V. This device is designed specifically as a single package RDS(ON) = 86 m: @ VGS = 2.5V „ x Low profile – 0.8 mm maximum – in the new package solution for dual switching requirements in cellular handset and other ultra-portable applications. It MicroFET 2x2 mm „ x HBM ESD protection level > 2kV (Note 3) features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. „x RoHS Compliant The MicroFET 2x2 package offers exceptional thermal „ Free from halogenated compounds and antimony oxides performance for its physical size and is well suited to linear mode applications. PIN 1 S1 G1 D1 RDS(ON) = 68 m: @ VGS = 4.5V D2 D2 D1 G2 S2 S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 MicroFET 2x2 Absolute Maximum Ratings Symbol VDS TA=25oC unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage VGS Drain Current ID – Continuous V r12 V A 3.7 (Note 1a) 1.4 (Note 1b) 0.7 6 Power Dissipation for Single Operation Operating and Storage Junction Temperature Range TJ, TSTG Units 20 (Note 1a) – Pulsed PD Ratings W –55 to +150 qC Thermal Characteristics RTJA Thermal Resistance, Junction-to-Ambient (Note 1a) 86 (Single Operation) RTJA Thermal Resistance, Junction-to-Ambient (Note 1b) 173 (Single Operation) RTJA Thermal Resistance, Junction-to-Ambient (Note 1c) 69 (Dual Operation) RTJA Thermal Resistance, Junction-to-Ambient (Note 1d) 151 (Dual Operation) qC/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 028 FDMA1028NZ 7’’ 8mm 3000 units ”203 Semiconductor Components Industries, LLC. October-2017, Rev. 2 Publication Order Number: FDMA1028NZ/D FDMA1028NZ Dual N-Channel PowerTrench“ MOSFET FDMA1028NZ Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS 'BVDSS 'TJ IDSS IGSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250 PA VGS = 0 V, ID = 250 PA, Referenced to 25qC V 20 mV/qC 15 Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 PA Gate–Body Leakage VGS = ± 12 V, VDS = 0 V ±10 PA On Characteristics (Note 2) 0.6 1.0 1.5 V VGS(th) 'VGS(th) 'TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID = 250 PA VDS = VGS, ID = 250 PA, Referenced to 25qC VGS = 4.5 V, ID = 3.7 A ID = 3.3 A VGS = 2.5 V, VGS= 4.5 V, ID = 3.7 A, TJ=125qC 37 50 53 gFS Forward Transconductance VDS = 10 V, ID = 3.7 A 16 S VDS = 10 V, f = 1.0 MHz V GS = 0 V, 340 pF 80 pF mV/qC –4 68 86 90 m: Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time 60 pF 25 Ω (Note 2) VDD = 10 V, VGS = 4.5 V, ID = 1 A, RGEN = 6 : 8 16 ns 8 16 ns td(off) Turn–Off Delay Time 14 26 ns tf Turn–Off Fall Time 3 6 ns Qg Total Gate Charge 4 6 Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = 10 V, VGS = 4.5 V ID = 3.7 A, www.onsemi.com 2 nC 0.7 nC 1.1 nC FDMA1028NZ Dual N-Channel PowerTrench“ MOSFET Electrical Characteristics Notes: 1. RθJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθJA is determined by the user's board design. (a) RθJA = 86 °C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. For single operation. (b) RθJA = 173 °C/W when mounted on a minimum pad of 2 oz copper. For single operation. (c) RθJA = 69 oC/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 ” x 1.5 ” x 0.062 ” thick PCB. For dual operation. (d) RθJA = 151 oC/W when mounted on a minimum pad of 2 oz copper. For dual operation. a. 86 °C/W when mounted on a 1 in2 pad of 2 oz copper b. 173 °C/W when mounted on a minimum pad of 2 oz copper c. 69 °C/W when mounted on a 1 in2 pad of 2 oz copper d. 151 °C/W when mounted on a minimum pad of 2 oz copper 2. Pulse Test : Pulse Width < 300 us, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. www.onsemi.com 3 FDMA1028NZ Dual N-Channel PowerTrench“ MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 6 2 2.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.5V VGS = 4.5V ID, DRAIN CURRENT (A) 5 3.5V 3.0V 4 3 2 1 1.5V 0 0.2 0.4 0.6 0.8 VDS, DRAIN-SOURCE VOLTAGE (V) 1 1.4 2.5V 1.2 3.0V 3.5V 4.0V 1 1.2 0 4.5V 1 2 3 4 ID, DRAIN CURRENT (A) 5 6 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. Figure 1. On-Region Characteristics. 0.13 1.6 ID = 3.7A VGS = 4.5V 1.5 ID = 1.85A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 0.8 0 1.4 1.3 1.2 1.1 1 0.9 0.8 0.11 0.09 o 0.07 TA = 125 C 0.05 o TA = 25 C 0.7 0.6 0.03 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 0 Figure 3. On-Resistance Variation with Temperature. 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 6 VGS = 0V IS, REVERSE DRAIN CURRENT (A) VDS = 5V 5 ID, DRAIN CURRENT (A) VGS = 2.0V 1.8 4 3 2 o TA = 125 C -55oC 1 o 10 1 0.1 TA = 125oC 0.01 o 25 C o 0.001 -55 C 25 C 0.0001 0 0.5 1 1.5 2 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 2.5 0 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.onsemi.com 4 FDMA1028NZ Dual N-Channel PowerTrench“ MOSFET Typical Characteristics 10 500 VDS = 5V VGS, GATE-SOURCE VOLTAGE (V) ID = 3.7A f = 1MHz VGS = 0 V 15V 8 400 CAPACITANCE (pF) 10V 6 4 300 200 Coss 2 100 0 0 Crss 0 4 6 Qg, GATE CHARGE (nC) 2 8 10 0 Figure 7. Gate Charge Characteristics. RDS(ON) LIMIT 100us 1ms 10ms 100ms 1s 10s DC 1 VGS = 4.5V SINGLE PULSE RTJA = 173°C/W TA = 25°C 0.1 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE RTJA = 173°C/W TA = 25°C 40 30 20 10 0.01 100 Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 20 50 P(pk), PEAK TRANSIENT POWER (W) 10 5 10 15 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance Characteristics. 100 ID, DRAIN CURRENT (A) Ciss 0 0.0001 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RTJA(t) = r(t) * RTJA RTJA =173 °C/W 0.2 0.1 P(pk) 0.1 0.05 t1 0.02 0.01 t2 TJ - TA = P * RTJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.01 0.0001 0.001 0.01 0.1 1 10 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. www.onsemi.com 5 100 1000 1000 FDMA1028NZ Dual N-Channel PowerTrench“ MOSFET Typical Characteristics FDMA1028NZ Dual N-Channel PowerTrench“ MOSFET Dimensional Outline and Pad Layout Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor products. www.onsemi.com 6 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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