FDMA1023PZ

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. Dual P-Channel PowerTrench® MOSFET –20V, –3.7A, 72m: Features General Description „ Max rDS(on) = 72m: at VGS = –4.5V, ID = –3.7A This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. „ Max rDS(on) = 95m: at VGS = –2.5V, ID = –3.2A „ Max rDS(on) = 130m: at VGS = –1.8V, ID = –2.0A „ Max rDS(on) = 195m: at VGS = –1.5V, ID = –1.0A „ Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. „ HBM ESD protection level > 2kV typical (Note 3) „ RoHS Compliant „ Free from halogenated compounds and antimony oxides Pin 1 G1 S1 D1 MicroFET 2X2 D1 D2 S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 D2 G2 S2 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Parameter Symbol VDS Drain to Source Voltage VGS Gate to Source Voltage Drain Current -Continuous ID (Note 1a) -Pulsed TJ, TSTG Units V ±8 V –3.7 A –6 Power Dissipation PD Ratings –20 (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range 1.5 W 0.7 –55 to +150 °C Thermal Characteristics RTJA Thermal Resistance for Single Operation, Junction to Ambient RTJA Thermal Resistance for Single Operation, Junction to Ambient RTJA RTJA (Note 1a) 86 (Note 1b) 173 Thermal Resistance for Dual Operation, Junction to Ambient  (Note 1c) 69 Thermal Resistance for Dual Operation, Junction to Ambient  (Note 1d) 151  °C/W Package Marking and Ordering Information Device Marking 023 Device FDMA1023PZ ©2009 Semiconductor Components Industries, LLC. October-2017, Rev. 3 Package MicroFET 2X2 1 Reel Size 7” Tape Width 8mm Quantity 3000 units Publication Order Number: FDMA1023PZ/D FDMA1023PZ Dual P-Channel PowerTrench® MOSFET FDMA1023PZ Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = –250PA, VGS = 0V 'BVDSS 'TJ Breakdown Voltage Temperature Coefficient –20 V ID = –250PA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = –16V, VGS = 0V –1 PA IGSS Gate to Source Leakage Current VGS = ±8V, VDS = 0V ±10 PA –1.0 V –11 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = –250PA 'VGS(th) 'TJ Gate to Source Threshold Voltage Temperature Coefficient ID = –250PA, referenced to 25°C 2.5 VGS = –4.5V, ID = –3.7A 60 VGS = –2.5V, ID = –3.2A 75 95 VGS = –1.8V, ID = –2.0A 100 130 VGS = –1.5V, ID = –1.0A 130 195 91 rDS(on) gFS Static Drain to Source On-Resistance Forward Transconductance –0.4 –0.7 mV/°C 72 m: VGS = –4.5V, ID = –3.7A,TJ =125°C 81 VDS = –5V, ID = –3.7A 12 VDS = –10V, VGS = 0V, f = 1MHz 490 655 pF 100 135 pF 90 135 pF S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = –10V, ID = –1A VGS = –4.5V, RGEN = 6: VDD = –10V, ID = –3.7A VGS = –4.5V 9 18 ns 12 22 ns 64 103 ns 37 60 ns 8.6 12 nC 0.7 nC 2.0 nC Drain-Source Diode Characteristics IS Maximum Continuous Source-Drain Diode Forward Current VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = –1.1A (Note 2) IF = –3.7A, di/dt = 100A/Ps www.onsemi.com 2 –0.8 –1.1 –1.2 A V 32 48 ns 15 23 nC FDMA1023PZ Dual P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 1: RTJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJCis guaranteed by design while RTJA is determined by the user's board design. (a) RTJA = 86°C/W when mounted on a 1in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB. For single operation. (b) RTJA = 173°C/W when mounted on a minimum pad of 2 oz copper. For single operation. (c) RTJA = 69oC/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB, For dual operation. (d) RTJA = 151oC/W when mounted on a minimum pad of 2 oz copper. For dual operation. a) 86oC/W when mounted on a 1 in2 pad of 2 oz copper. b) 173oC/W when mounted on a minimum pad of 2 oz copper. c) 69oC/W when mounted on a 1 in2 pad of 2 oz copper. 2: Pulse Test : Pulse Width < 300us, Duty Cycle < 2.0% 3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. www.onsemi.com 3 d) 151oC/W when mounted on a minimum pad of 2 oz copper. FDMA1023PZ Dual P-Channel PowerTrench® MOSFET Notes: -ID, DRAIN CURRENT (A) VGS = -1.8V VGS = -4.5V 5 VGS = -3.0V VGS = -2.5V VGS = -2.0V 4 3 VGS = -1.5V 2 1 PULSE DURATION = 300Ps DUTY CYCLE = 2.0%MAX 0 0.0 0.5 1.0 1.5 2.0 2.6 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 6 VGS = -1.5V 2.2 VGS = -1.8V VGS = -3.0V 1.8 VGS = -2.5V 1.4 1.0 0.6 0 1 1.6 1.0 0.8 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 160 120 TJ = 125oC 80 TJ = 25oC 40 150 0 -IS, REVERSE DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) PULSE DURATION = 300Ps DUTY CYCLE = 2.0%MAX VDD= -5V 4 3 TJ = 125oC TJ = 25oC 1 TJ = -55oC 0.5 1.0 1.5 -VGS, GATE TO SOURCE VOLTAGE (V) 1 2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) 6 Figure 4. On-Resistance vs Gate to Source Voltage 6 0 0.0 6 PULSE DURATION = 300Ps DUTY CYCLE = 2.0%MAX ID = -1.85A Figure 3. Normalized On-Resistance vs Junction Temperature 2 5 200 ID = -3.7A VGS = -4.5V 1.2 5 2 3 4 -ID, DRAIN CURRENT(A) Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m:) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE Figure 1. On Region Characteristics 0.6 -50 VGS = -4.5V PULSE DURATION = 300Ps DUTY CYCLE = 2.0%MAX -VDS, DRAIN TO SOURCE VOLTAGE (V) 1.4 VGS = -2.0V 2.0 10 VGS = 0V 1 TJ = 125oC 0.1 TJ = 25oC 0.01 TJ = -55oC 1E-3 1E-4 0.0 Figure 5. Transfer Characteristics 0.2 0.4 0.6 0.8 1.0 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Source to Drain Diode Forward Voltage vs Source Current www.onsemi.com 4 1.4 FDMA1023PZ Dual P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 1000 -VGS, GATE TO SOURCE VOLTAGE(V) 5 ID = -3.7A Ciss CAPACITANCE (pF) 4 VDD = -5V 3 VDD = -10V 2 VDD = -15V 1 100 f = 1MHz VGS = 0V 40 0.1 0 0 2 4 6 Qg, GATE CHARGE(nC) 8 10 20 10 rDS(on) LIMIT 100us 1ms 1 10ms VGS=-4.5V 0.1 100ms 1s 10s DC SINGLE PULSE o =173 R TJA C/W o TA = 25 C 0.01 0.1 1 60 10 Crss 20 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance Characteristics P(PK), PEAK TRANSIENT POWER (W) Figure 7. Gate Charge Characteristics -ID, DRAIN CURRENT (A) Coss 100 VGS = -10V FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 10 150 – T A ----------------------125 I = I25 TA = 25oC SINGLE PULSE o RTJA = 173 C/W 1 o TA=25 C 0.5 -4 10 -3 10 -VDS, DRAIN to SOURCE VOLTAGE (V) SINGLE PULSE -2 -1 0 1 10 10 10 10 t, PULSE WIDTH (s) 2 10 3 10 Figure 10. Single Pulse Maximum Power Dissipation Figure 9. Forward Bias Safe Operating Area 2 NORMALIZED THERMAL IMPEDANCE, ZTJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 0.005 -4 10 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZTJA x RTJA + TA SINGLE PULSE -3 10 -2 10 -1 10 0 10 t, RECTANGULAR PULSE DURATION (s) Figure 11. Transient Thermal Response Curve www.onsemi.com 5 1 10 2 10 3 10 FDMA1023PZ Dual P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted FDMA1023PZ Dual P-Channel PowerTrench® MOSFET Dimensional Outline and Pad Layout Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and conditions, specifically the warranty therein, which covers ON Semiconductor products. www.onsemi.com 6 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ❖ © Semiconductor Components Industries, LLC N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com